FMMT451 0.8 IB1=IB2=IC/10 ns VCE=10V FMMT451 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 400mΩ at 1A * 1 Amp continuous current * Ptot= 500 mW TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR E C IC/IB=10 0.6 0.4 0.2 ts 100 ns tr 600 0.01 0.1 1 ABSOLUTE MAXIMUM RATINGS. 50 ts 400 tf tr 200 td 0 0.001 10 0.01 IC - Collector Current (Amps) 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.8 200 1.6 160 1.4 - (Volts) 120 h IC/IB=10 80 1.0 0.8 0.6 0.4 0 V 40 0.001 0.01 0.1 1 0.2 0.001 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 1.8 10 Single Pulse Test at Tamb=25°C 1.6 - (Volts) 1.4 1 VCE=2V 1.2 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.1 V 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 10 0.1 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC 3 - 109 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.2 VCE=2V B FMMT551 451 800 td ts 0 COMPLEMENTARY TYPE PARTMARKING DETAIL tf Switching time V - (Volts) 150 100 PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 MIN. MAX. V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=60V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.35 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=150mA, IB=15mA* Static Forward Current Transfer Ratio hFE 50 10 Transition Frequency fT 150 Output Capacitance Cobo 150 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 108 FMMT451 0.8 IB1=IB2=IC/10 ns VCE=10V FMMT451 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 400mΩ at 1A * 1 Amp continuous current * Ptot= 500 mW TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR E C IC/IB=10 0.6 0.4 0.2 ts 100 ns tr 600 0.01 0.1 1 ABSOLUTE MAXIMUM RATINGS. 50 ts 400 tf tr 200 td 0 0.001 10 0.01 IC - Collector Current (Amps) 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.8 200 1.6 160 1.4 - (Volts) 120 h IC/IB=10 80 1.0 0.8 0.6 0.4 0 V 40 0.001 0.01 0.1 1 0.2 0.001 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 1.8 10 Single Pulse Test at Tamb=25°C 1.6 - (Volts) 1.4 1 VCE=2V 1.2 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.1 V 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 10 0.1 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC 3 - 109 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.2 VCE=2V B FMMT551 451 800 td ts 0 COMPLEMENTARY TYPE PARTMARKING DETAIL tf Switching time V - (Volts) 150 100 PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 MIN. MAX. V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=60V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.35 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=150mA, IB=15mA* Static Forward Current Transfer Ratio hFE 50 10 Transition Frequency fT 150 Output Capacitance Cobo 150 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 108