NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 VCE=10V tf,tr,td ns 0.8 IC/IB=10 tf Switching time VCE(sat) - (Volts) 150 0.6 0.4 0.2 0.001 0.01 0.1 1 C B ts ns 100 tr td ts 400 tf tr IC - Collector Current (Amps) ABSOLUTE MAXIMUM RATINGS. 200 td 0 0.01 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.8 200 1.6 160 1.4 hFE 120 VBE(sat) - (Volts) VCE=2V 80 40 IC/IB=10 0.001 0.01 0.1 1 1.0 0.8 0.6 0.4 0.001 10 0.1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.6 1.4 1.2 VCE=2V 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 1 10 Single Pulse Test at Tamb=25°C 10 VBE(on) - (Volts) 0.01 IC - Collector Current (Amps) 1.8 1 0.1 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 0.2 0 E-Line TO92 Compatible 600 50 10 D.C. 1s 100ms 10ms 1.0ms 300µs 100µs PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=40V VCB=40V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 1 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-on Voltage VBE(on) 1 V IC=1A,VCE=2V* Static Forward Current hFE Transfer Ratio 70 100 80 40 Transition Frequency fT 150 Output Capacitance Cobo 10 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 100 TYP. MAX. IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 15 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-174 E 800 ts 0 ZTX449 3-173 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 VCE=10V tf,tr,td ns 0.8 IC/IB=10 tf Switching time VCE(sat) - (Volts) 150 0.6 0.4 0.2 0.001 0.01 0.1 1 C B ts ns 100 tr td ts 400 tf tr IC - Collector Current (Amps) ABSOLUTE MAXIMUM RATINGS. 200 td 0 0.01 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.8 200 1.6 160 1.4 hFE 120 VBE(sat) - (Volts) VCE=2V 80 40 IC/IB=10 0.001 0.01 0.1 1 1.0 0.8 0.6 0.4 0.001 10 0.1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.6 1.4 1.2 VCE=2V 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 1 10 Single Pulse Test at Tamb=25°C 10 VBE(on) - (Volts) 0.01 IC - Collector Current (Amps) 1.8 1 0.1 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 0.2 0 E-Line TO92 Compatible 600 50 10 D.C. 1s 100ms 10ms 1.0ms 300µs 100µs PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=40V VCB=40V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 1 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-on Voltage VBE(on) 1 V IC=1A,VCE=2V* Static Forward Current hFE Transfer Ratio 70 100 80 40 Transition Frequency fT 150 Output Capacitance Cobo 10 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 100 TYP. MAX. IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 15 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-174 E 800 ts 0 ZTX449 3-173