FMMT549 FMMT549A TYPICAL CHARACTERISTICS ts td,tr,tf (ns) (ns) 180 0.8 IB1=IB2=IC/10 160 Switching time - (Volts) V 1400 120 IC/IB=100 0.4 IC/IB=10 0.2 ts 100 1200 tr 1000 80 800 td 0.1 1 PARAMETER SYMBOL VALUE UNIT 200 Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Ptot 500 mW -55 to +150 °C tf 0.1 0.01 VCE(sat) v IC Power Dissipation: 1.4 120 80 1.0 IC/IB=100 IC/IB=10 h SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -35 V IC=-100µA V(BR)CEO -30 V IC=-10mA* V(BR)EBO -5 V IE=-100µA V PARAMETER 0.6 0.001 0.01 0.1 1 0.01 10 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 Cut-Off Currents Saturation Voltages - (Volts) V 0.8 0.1 0.7 0.01 µA µA VCB=-30V VCB=-30V, Tamb=100°C IEBO -0.1 µA VEB=-4V -0.50 -0.75 V V VCE(sat) -0.25 -0.50 -0.30 V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA* -0.85 -1 V IC=-1A, VCE=-2V* 200 130 80 DC 1s 100ms 10ms 1ms 100µs FMMT549 100 160 300 FMMT549A 150 200 500 Transition Frequency 0.001 -0.1 -10 70 80 40 Static Forward Current Transfer Ratio 1 0.1 1 10 IC - Collector Current (Amps) 0.01 0.1 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 128 MAX. ICBO Base Emitter Turn-on Voltage VBE(on) IC/IB=10 0.9 TYP. FMMT549A Single Pulse Test at Tamb=25°C 1.0 0.6 Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 40 at Tamb=25°C Operating and Storage Temperature Range 1.2 - (Volts) - Gain 0 1 Switching Speeds VCE=2V ABSOLUTE MAXIMUM RATINGS. 400 IC - Collector Current (Amps) 160 B 600 IC - Collector Current (Amps) 200 E C 40 0 10 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current COMPLEMENTARY TYPES FMMT549 - FMMT449 FMMT549A - N/A PARTMARKING DETAIL FMMT549 - 549 FMMT549A - 59A 60 20 0.01 1800 1600 140 0.6 0 FMMT549 FMMT549A SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS hFE fT Output Capacitance Cobo Switching Times ton IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* 100 25 50 IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V, f=1MHz ns IC=-500mA, VCC=-10V IB1=IB2=-50mA toff 300 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 127 FMMT549 FMMT549A TYPICAL CHARACTERISTICS ts td,tr,tf (ns) (ns) 180 0.8 IB1=IB2=IC/10 160 Switching time - (Volts) V 1400 120 IC/IB=100 0.4 IC/IB=10 0.2 ts 100 1200 tr 1000 80 800 td 0.1 1 PARAMETER SYMBOL VALUE UNIT 200 Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Ptot 500 mW -55 to +150 °C tf 0.1 0.01 VCE(sat) v IC Power Dissipation: 1.4 120 80 1.0 IC/IB=100 IC/IB=10 h SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -35 V IC=-100µA V(BR)CEO -30 V IC=-10mA* V(BR)EBO -5 V IE=-100µA V PARAMETER 0.6 0.001 0.01 0.1 1 0.01 10 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 Cut-Off Currents Saturation Voltages - (Volts) V 0.8 0.1 0.7 0.01 µA µA VCB=-30V VCB=-30V, Tamb=100°C IEBO -0.1 µA VEB=-4V -0.50 -0.75 V V VCE(sat) -0.25 -0.50 -0.30 V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA* -0.85 -1 V IC=-1A, VCE=-2V* 200 130 80 DC 1s 100ms 10ms 1ms 100µs FMMT549 100 160 300 FMMT549A 150 200 500 Transition Frequency 0.001 -0.1 -10 70 80 40 Static Forward Current Transfer Ratio 1 0.1 1 10 IC - Collector Current (Amps) 0.01 0.1 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 128 MAX. ICBO Base Emitter Turn-on Voltage VBE(on) IC/IB=10 0.9 TYP. FMMT549A Single Pulse Test at Tamb=25°C 1.0 0.6 Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 40 at Tamb=25°C Operating and Storage Temperature Range 1.2 - (Volts) - Gain 0 1 Switching Speeds VCE=2V ABSOLUTE MAXIMUM RATINGS. 400 IC - Collector Current (Amps) 160 B 600 IC - Collector Current (Amps) 200 E C 40 0 10 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current COMPLEMENTARY TYPES FMMT549 - FMMT449 FMMT549A - N/A PARTMARKING DETAIL FMMT549 - 549 FMMT549A - 59A 60 20 0.01 1800 1600 140 0.6 0 FMMT549 FMMT549A SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS hFE fT Output Capacitance Cobo Switching Times ton IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* 100 25 50 IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V, f=1MHz ns IC=-500mA, VCC=-10V IB1=IB2=-50mA toff 300 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 127