KSH13003 KSH13003 High Voltage Power Transistor D-PACK for Surface Mount Applications • • • • High speed Switching Suitable for Switching Regulator Motor Control Straight Lead (I.PACK, I Suffix) Lead Formed for Surface Mount Applications (No Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current Value 700 Units V 400 V 9 V 1.5 A 3 A 0.75 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Breakdown Voltage Test Condition IC = 5mA, IB = 0 IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE * DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1 3 V V V VBE(sat) * Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A 1 1.2 V V Cob Output Capacitance VCB = 10V, f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn ON time tSTG Storage time VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A tF Fall Time Min. 400 Typ. 8 5 Max. Units V 10 µA 40 21 pF 4 MHz 1.1 µs 4.0 µs 0.7 µs * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSH13003 Typical Characteristics 2.0 100 VCE =2V 1.6 I B=5 1.4 A A 00m =450m IB=400mA IB IB=350mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1.8 IB=300mA IB=250mA 1.2 IB=200mA IB=150mA 1.0 IB=100mA 0.8 IB=50mA 0.6 0.4 0.2 10 1 IB=0mA 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 0.01 5.0 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 10 10 IC=4IB tstg VBE(sat) 1 1 tstg,tf[uS], TIME VBE(sat),VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic VCE(sat) 0.1 0.01 0.01 tf 0.1 0.01 0.1 1 10 0.1 IC[A], COLLECTOR CURRENT 1 IB[A], BASE CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 50 S 1m PD[W], POWER DISSIPATION 5m IC MAX.(DC) 45 10 uS IC MAX. (PLUSE) IC[A], COLLECTOR CURRENT 1 1 S 00u S 1 0.1 40 35 30 25 20 15 10 5 0.01 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSH13003 Package Demensions D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E