ZTX558 TYPICAL CHARACTERISTICS VCE(sat) - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C IC - Collector Current (Amps) 1.0 VBE - (Volts) 1 1.4 200 0.6 VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 -55°C +25°C +100°C +175°C VCE=10V 0.8 1.4 0.01 VCE(sat) v IC 1.0 1.6 ABSOLUTE MAXIMUM RATINGS. 0.6 0.01 0.1 1 10 20 10 20 Single Pulse Test at Tamb=25°C 0.1 0.01 0.001 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 1000 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg -5 V -200 mA 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA IC=-50mA, IB=-6mA Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V* 300 5 95 1600 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-203 E E-Line TO92 Compatible 0.8 VCE(sat) v IC 1.2 0 0.001 C B IC - Collector Current (Amps) 300 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt 1.0 IC - Collector Current (Amps) +100°C +25°C -55°C ZTX558 1.2 0 0.001 20 VBE(sat) - (Volts) 1.6 1.4 IC/IB=10 0.2 hFE - Typical Gain hFE - Normalised Gain 0 0.001 -55°C +25°C +100°C +175°C 1.6 VCE(sat) - (Volts) 1.6 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR 3-202 ZTX558 TYPICAL CHARACTERISTICS VCE(sat) - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C IC - Collector Current (Amps) 1.0 VBE - (Volts) 1 1.4 200 0.6 VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 -55°C +25°C +100°C +175°C VCE=10V 0.8 1.4 0.01 VCE(sat) v IC 1.0 1.6 ABSOLUTE MAXIMUM RATINGS. 0.6 0.01 0.1 1 10 20 10 20 Single Pulse Test at Tamb=25°C 0.1 0.01 0.001 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 1000 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg -5 V -200 mA 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA IC=-50mA, IB=-6mA Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V* 300 5 95 1600 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-203 E E-Line TO92 Compatible 0.8 VCE(sat) v IC 1.2 0 0.001 C B IC - Collector Current (Amps) 300 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt 1.0 IC - Collector Current (Amps) +100°C +25°C -55°C ZTX558 1.2 0 0.001 20 VBE(sat) - (Volts) 1.6 1.4 IC/IB=10 0.2 hFE - Typical Gain hFE - Normalised Gain 0 0.001 -55°C +25°C +100°C +175°C 1.6 VCE(sat) - (Volts) 1.6 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR 3-202