DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 10V 10.3A 15mΩ @ VGS = 4.5V 9.3A 30V Description and Applications • 100% Unclamped Inductive Switch (UIS) test in production • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 1) "Green" Device, Halogan and Antimony Free (Note 2) Qualified to AEC-Q101 standards for High Reliability Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • Backlighting Power Management Functions DC-DC Converters • Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SO-8 S D S D S D G D Top View Top View Internal Schematic Ordering Information (Note 3) Part Number DMG4406LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View 8 5 Logo G4406LS Part no. YY WW Xth week: 01 ~ 53 Year: “11” = 2011 1 DMG4406LSS Document number: DS35539 Rev. 7 - 2 4 1 of 6 www.diodes.com February 2012 © Diodes Incorporated DMG4406LSS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION Continuous Drain Current (Note 5) VGS = 10V Steady State t<10s Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 30 ±20 10.3 8.3 ID 13.4 10.6 A ID 9.3 7.3 A A 12.0 9.5 2.5 90 22 24 A A A mJ Value 1.5 80 48 2.0 61 37 6.4 -55 to 150 Units W °C/W °C/W W °C/W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 6) L = 0.1mH Repetitive Avalanche Energy (Note 6) L = 0.1mH Units V V IS IDM IAR EAR A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Steady State t<10s RθJA Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Electrical Characteristics TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 8 12 32 0.70 2.0 11 15 1.0 V Static Drain-Source On-Resistance 1.4 - VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VDS = 5V, ID = 12A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr - 1281 145 125 1.2 12.5 26.7 3.6 4.4 5.2 21.2 22.3 5.1 8.5 7.0 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A ns VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω, ns nC IF=12A, di/dt=500A/us 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG4406LSS Document number: DS35539 Rev. 7 - 2 2 of 6 www.diodes.com February 2012 © Diodes Incorporated DMG4406LSS 30 30 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.5V VGS = 4.0V 20 VGS = 3.5V VGS = 3.0V 15 10 5 VDS = 5.0V 20 15 10 TA = 150°C TA = 125°C 5 TA = 85°C VGS = 2.5V TA = 25°C 0 0.5 1.0 1.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.04 0.03 0.02 0.01 0 0 2.0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4406LSS Document number: DS35539 Rev. 7 - 2 3 of 6 www.diodes.com 4 0.04 VGS = 4.5V 0.03 TA = 125°C 0.02 T A = 150°C TA = 85° C T A = 25°C 0.01 T A = -55°C 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION 25 30 VGS = 4.5V ID = 5A VGS = 10V ID = 10A -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature February 2012 © Diodes Incorporated DMG4406LSS VGS(TH), GATE THRESHOLD VOLTAGE(V) IS, SOURCE CURRENT (A) 25 15 10 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,800 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 IDSS, LEAKAGE CURRENT (nA) f = 1MHz 1,600 1,400 1,200 C iss 1,000 800 600 400 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 Coss 200 0 0 10,000 2,000 CT, JUNCTION CAPACITANCE (pF) 20 5 TA = 25°C Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 10 20 30 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 10 0 1,000 9 f = 1MHz 8 100 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION 30 7 6 5 4 3 RDS(on) Limited 10 DC PW = 10s 1 PW = 100ms PW = 10ms PW = 1ms 0.1 2 PW = 1s PW = 100µs PW = 10µs 1 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMG4406LSS Document number: DS35539 Rev. 7 - 2 30 4 of 6 www.diodes.com 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 February 2012 © Diodes Incorporated DMG4406LSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 60°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions 0.254 NEW PRODUCT ADVANCE INFORMATION 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4406LSS Document number: DS35539 Rev. 7 - 2 5 of 6 www.diodes.com February 2012 © Diodes Incorporated DMG4406LSS IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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