DIODES DMS3014SSS-13

DMS3014SSS
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
Mechanical Data
•
•
•
•
•
•
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
•
Low RDS(ON) - minimizes conduction losses
•
Low VSD - reducing the losses due to body diode conduction
•
Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
•
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
•
Avalanche rugged – IAR and EAR rated
Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072 grams (approximate)
S
D
S
D
S
D
G
D
Top View
Internal Schematic
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3) VGS = 4.5V
Steady
State
TA = 25°C
TA = 85°C
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
Unit
V
V
EAR
Value
30
±12
10.4
6.6
63
30
45
Symbol
PD
RθJA
TJ, TSTG
Value
1.55
81.3
-55 to +150
Unit
W
°C/W
°C
ID
IDM
IAR
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
1 of 6
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September 2010
© Diodes Incorporated
DMS3014SSS
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
30
-
-
100
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
1.0
-
2.2
V
RDS (ON)
-
9
10
13
14
mΩ
|Yfs|
VSD
IS
-
23
0.37
-
0.5
5
S
V
A
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10.4A
VGS = 4.5V, ID = 10.4A
VDS = 5V, ID = 10.4A
VGS = 0V, IS = 1A
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
0.26
-
2296
164
120
1.3
19.3
45.7
5.0
2.9
5.5
24.4
33.1
6.6
2.34
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 10V, ID = 10.4A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.2Ω
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
30
VGS = 4.0V
VGS = 3.5V
25
VDS = 5V
25
VGS = 2.5V
ID, DRAIN CURRENT (A)
VGS = 4.5V
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics @ TA = 25°C unless otherwise stated
20
VGS = 3.0V
15
10
VGS = 2.2V
5
20
VGS = 150°C
15
VGS = 125°C
10
VGS = 85°C
VGS = 25°C
5
VGS = -55°C
VGS = 2.0V
0
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
2
0
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0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
September 2010
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.04
0.03
VGS = 2.5V
0.02
VGS = 4.5V
0.01
VGS = 10V
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
VGS = 4.5V
ID = 10A
1.4
VGS = 10V
ID = 20A
1.2
1.0
0.8
0.6
-50
0.04
VGS = 4.5V
0.03
TA = 150°C
0.02
TA = 125°C
TA = 85°C
TA = 25°C
0.01
0
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0
TA = -55°C
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.03
0.02
VGS = 4.5V
ID = 10A
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
VGS = 10V
ID = 20A
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
20
3.0
18
2.5
16
2.0
1.5
ID = 10mA
1.0
0.5
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMS3014SSS
14
TA = 25°C
12
10
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
0
0
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0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
September 2010
© Diodes Incorporated
DMS3014SSS
10,000
10,000
IDSS, LEAKAGE CURRENT (µA)
C, CAPACITANCE (pF)
Ciss
1,000
Coss
Crss
100
10
TA = 125°C
1,000
TA = 85°C
100
10
TA = 25°C
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
0
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
30
10
9
VGS, GATE-SOURCE VOLTAGE (V)
8
7
VDS = 15V
ID = 11.2A
6
5
4
3
2
1
0
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 75°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.0001
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
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10
100
1,000
September 2010
© Diodes Incorporated
DMS3014SSS
Ordering Information (Note 8)
Part Number
DMS3014SSS-13
Packaging
2500 / Tape & Reel
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8
5
Logo
S3014SS
Part no.
YY WW
1
4
Xth week: 51 ~ 53
Year: “08” = 2008
“09” = 2009
Package Outline Dimensions
0.254
NEW PRODUCT
Notes:
Case
SO-8
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
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September 2010
© Diodes Incorporated
DMS3014SSS
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DMS3014SSS
Document number: DS32265 Rev. 3 - 2
6 of 6
www.diodes.com
September 2010
© Diodes Incorporated