SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 – OCTOBER 1995 FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – C FCX558 N58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 5 V Continuous Collector Current IC 225 mA Peak Pulse Current I CM 500 mA Power Dissipation at T amb=25°C P tot 1 W Operating and Storage Temperature Range T j :T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V (BR)CBO 400 MAX. V I C=100µA V CEO(sus) 400 V I C=10mA* V (BR)EBO 5 V I E=100µA ICBO 100 nA V CB=320V I CES 100 nA V CE =320V Emitter Cut-Off Current I EBO 100 nA V EB=4V Emitter Saturation Voltages V CE(sat) 0.2 0.5 V V I C=20mA, I B=2mA* I C=50mA, I B=6mA* V BE(sat) 0.9 V I C=50mA, I B=5mA* Base-Emitter Turn On Voltage V BE(on) 0.9 V I C =50mA, V CE=10V* Static Forward Current Transfer Ratio h FE Transition Frequency fT Collector-Base Breakdown Voltage C obo Switching times t on t off Collector Cut-Off Currents 100 100 15 I C=1mA, V CE=10V I C=50mA, V CE=10V* I C=100mA, V CE=10V** 300 50 5 135 Typical 2260 Typical MHz I C=10mA, V CE=20V f=20MHz pF V CB=20V, f=1MHz ns ns I C=50mA, V C=100V I B1=5mA, I B2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT458 datasheet 3 - 85 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Inc.: FCX458TA