SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ✪ ISSUE 3 OCTOBER 1995 FEATURES * 150 Volt VCEO * 1 Amp continuous current PARTMARKING DETAIL – FCX495 C N95 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 170 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A 200 mA Base Current IB Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Breakdown Voltages V(BR)CBO 170 V IC=100µA VCEO(sus) 150 V IC=10mA* V(BR)EBO 5 V IE=100µA Collector Cut-Off Currents MAX. UNIT CONDITIONS. ICBO, ICES 100 nA VCB=150V, VCE=150V Emitter Cut-Off Current IEBO 100 nA VEB=4V Emitter Saturation Voltages VCE(sat) 0.2 0.3 V V IC=250mA, IB=25mA* IC=500mA, IB=50mA* VBE(sat) 1.0 V IC=500mA, IB=50mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=500mA, VCE=10V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Collector-Base Breakdown Voltage Cobo 100 100 50 10 IC=1mA, VCE=10V IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 100 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMT495 Datasheet 3 - 89