SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT597 FMMT597 ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25°C 0.5 0.4 IC/IB=10 IC/IB=50 0.4 0.3 0.2 0.2 0.1 0.1 1mA 10mA 100mA 1A 0 -55° C +25° C +100° C 1mA 240 160 +25° C 10mA 100mA 1A IC-Collector Current VCE(sat) v IC 0.9 VCE=10V +100° C B ABSOLUTE MAXIMUM RATINGS. IC-Collector Current VCE(sat) v IC 320 IC/IB=10 0.8 0.6 80 0 1mA 10mA 100mA 1A 0 100mA 1A 1 0.1 0.6 -55° C +25° C +100° C 0.4 0.01 0.2 10mA 100mA 1A IC-Collector Current VBE(on) v IC 0.001 1 DC 1s 100ms 10ms 1ms 100µs 10 100 SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.2 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER IC-Collector Current VBE(sat) v IC 0.9 VCE=10V 0.8 1mA 10mA 1mA PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.2 IC-Collector Current hFE V IC 0 -55° C +25° C +100° C 0.4 -55° C 1000 SYMBOL MIN. Safe Operating Area MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -300 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -300 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-250V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-250V Emitter Saturation Voltages VCE(sat) -0.25 -0.25 V V IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA* VBE(sat) -1.0 V IC=-100mA, IB=-20mA* Base-Emitter Turn-on Voltage VBE(on) -0.85 V IC=-100mA,VCE=-10V* Static Forward Current Transfer Ratio hFE 100 100 100 Transition Frequency fT 75 Output Capacitance Cobo VCE - Collector Emitter Voltage (V) IC=-1mA, VCE=-10V IC=-50mA,VCE=-10V* IC=-100mA,VCE=-10V* 300 MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 146 E C IC/IB=10 0.4 0.3 0 COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 3 - 145 VCB=-10V, f=1MHz SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT597 FMMT597 ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25°C 0.5 0.4 IC/IB=10 IC/IB=50 0.4 0.3 0.2 0.2 0.1 0.1 1mA 10mA 100mA 1A 0 -55° C +25° C +100° C 1mA 240 160 +25° C 10mA 100mA 1A IC-Collector Current VCE(sat) v IC 0.9 VCE=10V +100° C B ABSOLUTE MAXIMUM RATINGS. IC-Collector Current VCE(sat) v IC 320 IC/IB=10 0.8 0.6 80 0 1mA 10mA 100mA 1A 0 100mA 1A 1 0.1 0.6 -55° C +25° C +100° C 0.4 0.01 0.2 10mA 100mA 1A IC-Collector Current VBE(on) v IC 0.001 1 DC 1s 100ms 10ms 1ms 100µs 10 100 SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.2 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER IC-Collector Current VBE(sat) v IC 0.9 VCE=10V 0.8 1mA 10mA 1mA PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.2 IC-Collector Current hFE V IC 0 -55° C +25° C +100° C 0.4 -55° C 1000 SYMBOL MIN. Safe Operating Area MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -300 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -300 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-250V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-250V Emitter Saturation Voltages VCE(sat) -0.25 -0.25 V V IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA* VBE(sat) -1.0 V IC=-100mA, IB=-20mA* Base-Emitter Turn-on Voltage VBE(on) -0.85 V IC=-100mA,VCE=-10V* Static Forward Current Transfer Ratio hFE 100 100 100 Transition Frequency fT 75 Output Capacitance Cobo VCE - Collector Emitter Voltage (V) IC=-1mA, VCE=-10V IC=-50mA,VCE=-10V* IC=-100mA,VCE=-10V* 300 MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 146 E C IC/IB=10 0.4 0.3 0 COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 3 - 145 VCB=-10V, f=1MHz