VISHAY TFDU6103

TFDU6103
Vishay Semiconductors
Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
FEATURES
• Supply voltage 2.4 V to 5.5 V, operating idle
current (receive mode) < 3.3 mA, shutdown
current < 1 µA over full temperature range
• Surface mount package, top and side view,
9.7 mm x 4.7 mm x 4 mm
20110
• Operating temperature - 25 °C to 85 °C
• Transmitter wavelength typ. 886 nm, supporting
IrDA and remote control
DESCRIPTION
The TFDU6103 is a low-power infrared transceiver module
compliant to the latest IrDA® physical layer standard for fast
infrared data communication, supporting IrDA speeds up to
4 Mbit/s (FIR), and carrier based remote control modes up to
2 MHz. Integrated within the transceiver module are a PIN
photodiode, an infrared emitter (IRED), and a low-power
CMOS control IC to provide a total front-end solution in a
single package.
Vishay FIR transceivers are available in different package
options, including this BabyFace package (TFDU6103). This
wide selection provides flexibility for a variety of applications
and space constraints. The transceivers are capable of
directly interfacing with a wide variety of I/O devices which
perform the modulation/demodulation function, including
National Semiconductor’s PC87338, PC87108 and
PC87109,
SMC’s
FDC37C669,
FDC37N769
and
CAM35C44, and Hitachi’s SH3. TFDU6103 has a tri-state
output and is floating in shut-down mode with a weak pull-up.
• IrDA compliant, link distance > 1 m, ± 15°, window losses
are allowed to still be inside the IrDA spec.
• Remote control range > 8 m, typ. 22 m
• ESD > 1 kV
• Latchup > 100 mA
• EMI immunity > 550 V/m for GSM frequency and other
mobile telephone bands/(700 MHz to 2000 MHz, no
external shield)
• Split power supply, LED can be driven by a separate power
supply not loading the regulated supply. U.S. pat.
no. 6,157,476
• Tri-state-receiver output, floating in shut down with a weak
pull-up
• Eye safety class 1 (IEC 60825-1, ed. 2001), limited LED
on-time, LED current is controlled, no single fault to be
considered
• Qualified for lead (Pb)-free and Sn/Pb processing (MSL4)
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
APPLICATIONS
and
in
• Notebook computers, desktop PCs, palmtop computers
(Win CE, Palm PC), PDAs
• Digital still and video cameras
• Printers, fax machines, photocopiers, screen projectors
• Telecommunication products (cellular phones, pagers)
• Internet TV boxes, video conferencing systems
• External infrared adapters (dongles)
• Medical an industrial data collection
PRODUCT SUMMARY
PART NUMBER
TFDU6103
DATA RATE
(kbit/s)
DIMENSIONS
HxLxW
(mm x mm x mm)
LINK DISTANCE
(m)
OPERATING
VOLTAGE
(V)
IDLE SUPPLY
CURRENT
(mA)
4000
4 x 9.7 x 4.7
0 to 1
2.4 to 5.5
2
PARTS TABLE
PART
DESCRIPTION
QTY/REEL
TFDU6103-TR3
Oriented in carrier tape for side view surface mounting
1000 pcs
TFDU6103-TT3
Oriented in carrier tape for top view surface mounting
1000 pcs
Document Number: 81211
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Rev. 1.4, 29-Jul-09
www.vishay.com
1
TFDU6103
Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
FUNCTIONAL BLOCK DIAGRAM
VCC1
Tri-State
Driver
Amplifier
RXD
Comparator
VCC2
Logic
and
SD
Controlled
Driver
Control
TXD
IRED C
GND
18468
PINOUT
TFDU6103
weight 0.2 g
”U” Option Baby Face (universal)
IRED
1
2
17087
Detector
3
4
5
6
7
8
Definitions:
In the Vishay transceiver datasheets the following
nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial
infrared standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by
IrPhy 1.2, adding the SIR low power standard. IrPhy 1.3
extended the low power option to MIR and FIR and VFIR was
added with IrPhy 1.4. A new version of the standard in any
case obsoletes the former version.
Note
We apologize to use sometimes in our documentation the
abbreviation LED and the word light emitting diode instead of
infrared emitting diode (IRED) for IR-emitters. That is by definition
wrong; we are here following just a bad trend.
Typical values are for design aid only, not guaranteed nor subject to
production testing and may vary with time.
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
DESCRIPTION
1
VCC2
IRED anode
Connect IRED anode directly to VCC2. For voltages higher than 3.6 V an external resistor
might be necessary for reducing the internal power dissipation.
An unregulated separate power supply can be used at this pin
2
IRED
cathode
IRED cathode, internally connected to driver transistor
3
TXD
4
I/O
ACTIVE
This input is used to transmit serial data when SD is low. An on-chip protection circuit
disables the LED driver if the TXD pin is asserted for longer than 100 µs. When used in
conjunction with the SD pin, this pin is also used to set receiver speed mode
I
High
RXD
Received data output, push-pull CMOS driver output capable of driving a standard CMOS
or TTL load. No external pull-up or pull-down resistor is required.
Floating with a weak pull-up of 500 k (typ.) in shutdown mode
O
Low
5
SD
Shutdown, also used for dynamic mode switching. Setting this pin active places the module
into shutdown mode. On the falling edge of this signal, the state of the TXD pin is sampled
and used to set receiver low bandwidth (TXD = low, SIR) or high bandwidth
(TXD = high, MIR and FIR) mode
I
High
6
VCC1
Supply voltage
7
NC
8
GND
www.vishay.com
2
Ground
Document Number: 81211
For technical questions within your region, please contact one of the following:
Rev. 1.4, 29-Jul-09
[email protected], [email protected], [email protected]
TFDU6103
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors
for 2.4 V to 5.5 V Operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
Supply voltage range,
transceiver
0 V < VCC2 < 6 V
VCC1
Supply voltage range,
transmitter
0 V < VCC1 < 6 V
VCC2
Input currents
TYP.
MAX.
UNIT
- 0.5
+6
V
- 0.5
+ 6.5
V
10
mA
For all pins,
except IRED anode pin
Output sinking current
Power dissipation
See derating curve, figure 6
Junction temperature
Ambient temperature range
(operating)
Storage temperature range
Soldering temperature
mW
TJ
125
°C
Tamb
- 25
+ 85
°C
Tstg
- 25
+ 85
°C
260
°C
125
mA
IIRED (DC)
< 90 µs, ton < 20 %
IRED anode voltage
Voltage at all inputs and outputs
mA
500
See recommended solder profile
(see figure 4)
Average output current
Repetitive pulse output current
25
PD
IIRED (RP)
VIREDA
VIN > VCC1 is allowed
- 0.5
VIN
600
mA
+ 6.5
V
5.5
V
Note
Reference point ground pin 8, unless otherwise noted.
Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time.
EYE SAFETY INFORMATION
STANDARD
CLASSIFICATION
IEC/EN 60825-1 (2007-03), DIN EN 60825-1 (2008-05) “SAFETY OF LASER PRODUCTS Part 1: equipment classification and requirements”, simplified method
Class 1
IEC 62471 (2006), CIE S009 (2002) “Photobiological Safety of Lamps and Lamp Systems”
Exempt
DIRECTIVE 2006/25/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 5th April 2006
on the minimum health and safety requirements regarding the exposure of workers to risks arising from
physical agents (artificial optical radiation) (19th individual directive within the meaning of article 16(1)
of directive 89/391/EEC)
Exempt
Note
Vishay transceivers operating inside the absolute maximum ratings are classified as eye safe according the above table.
ELECTRICAL CHARACTERISTICS
PARAMETER
(1)
TEST CONDITIONS
SYMBOL
MIN.
VCC
2.4
TYP.
MAX.
UNIT
5.5
V
TRANSCEIVER
Supply voltage
Dynamic supply current
Shutdown supply current
Receive mode only, idle
In transmit mode, add additional 85 mA (typ.) for IRED current.
Add RXD output current depending on RXD load.
SIR mode
ICC
1.8
3
mA
MIR/FIR mode
ICC
2
3.3
mA
SD = high
T = 25 °C, not ambient light
sensitive, detector is disabled in
shutdown mode
ISD
0.01
SD = high, full specified
temperature range, not ambient
light sensitive
ISD
µA
1
µA
Operating temperature range
TA
- 25
+ 85
°C
Input voltage low
(TXD, SD)
VIL
- 0.5
0.5
V
Document Number: 81211
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Rev. 1.4, 29-Jul-09
www.vishay.com
3
TFDU6103
Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
ELECTRICAL CHARACTERISTICS
PARAMETER
(1)
TEST CONDITIONS
SYMBOL
MIN.
CMOS level (2)
VIH
VIN = 0.9 x VCC1
IICH
TYP.
MAX.
UNIT
VCC - 0.3
6
V
-1
+1
µA
5
pF
0.4
V
TRANSCEIVER
Input voltage high
(TXD, SD)
Input leakage current
(TXD, SD)
Input capacitance, TXD, SD
CI
Output voltage low
IOL = 500 µA, Cload = 15 pF
VOL
Output voltage high
IOH = 250 µA, Cload = 15 pF
VOH
Output RXD current limitation
high state
low state
Short to ground
Short to VCC1
SD shutdown pulse duration
Activating shutdown
V
30
RXD to VCC1 impedance
SD mode programming pulse
duration
0.9 x VCC1
All modes
RRXD
400
tSDPW
200
500
20
20
mA
mA

µs
600
k
ns
Note
(1) T
amb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted.
Typical values are for design aid only, not guaranteed nor subject to production testing.
(2) The typical threshold level is 0.5 x V
CC1 (VCC1 = 3 V). It is recommended to use the specified min./max. values to avoid increased operating
current.
OPTOELECTRONIC CHARACTERISTICS
PARAMETER
(1)
TEST CONDITIONS
SYMBOL
9.6 kbit/s to 115.2 kbit/s
 = 850 nm to 900 nm
Minimum irradiance Ee in
angular range, MIR mode
MIN.
TYP.
MAX.
UNIT
Ee
25
(2.5)
35
(3.5)
mW/m2
(µW/cm2)
1.152 Mbit/s
 = 850 nm to 900 nm
Ee
65
(6.5)
Minimum irradiance Ee
inangular range, FIR mode
4 Mbit/s
 = 850 nm to 900 nm
Ee
80
(8)
Maximum irradiance Ee in
angular range (4)
 = 850 nm to 900 nm
Ee
5
(500)
(2)
Ee
4
(0.4)
Rise time of output signal
10 % to 90 %, 15 pF
tr (RXD)
10
40
ns
Fall time of output signal
90 % to 10 %, 15 pF
tf (RXD)
10
40
ns
Input pulse length, 1.4 µs < PWopt < 25 µs
tPW
Input pulse length, 1.4 µs < PWopt < 25 µs,
- 25 °C < T < 85 °C (5)
tPW
1.5
1.8
2.6
µs
Input pulse length, PWopt = 217 ns,
1.152 Mbit/s
tPW
110
250
270
ns
Input pulse length, PWopt = 125 ns,
4 Mbit/s
tPW
100
140
ns
Input pulse length, PWopt = 250 ns,
4 Mbit/s
tPW
225
275
ns
RECEIVER
Minimum irradiance Ee in
angular range (3) SIR mode
Maximum no detection
irradiance
RXD pulse width of output
signal, 50 %, SIR mode
RXD pulse width of output
signal, 50 %, MIR mode
RXD pulse width of output
signal, 50 %, FIR mode
Stochastic jitter, leading edge
Receiver start up time
Latency
www.vishay.com
4
mW/m2
(µW/cm2)
90
(9)
mW/m2
(µW/cm2)
kW/m2
(mW/cm2)
mW/m2
(µW/cm2)
2.1
µs
Input irradiance = 100 mW/m2, 4 Mbit/s
20
ns
Input irradiance = 100 mW/m2, 1.152 Mbit/s
40
ns
Input irradiance = 100 mW/m2, 576 kbit/s
80
ns
Input irradiance = 100 mW/m2,  115.2 kbit/s
350
ns
After completion of shutdown programming
sequence power on delay
250
µs
100
µs
tL
40
Document Number: 81211
For technical questions within your region, please contact one of the following:
Rev. 1.4, 29-Jul-09
[email protected], [email protected], irdas[email protected]
TFDU6103
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors
for 2.4 V to 5.5 V Operation
OPTOELECTRONIC CHARACTERISTICS
PARAMETER
(1)
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note: no external current limiting resistor is needed
for
VCC1 = VCC2 = 3.3 V
ID
330
440
600
mA
TRANSMITTER
IRED operating current,
switched current limiter
Output pulse width limitation
Input pulse width t < 20 µs
tpw
Input pulse width 20 µs < t < 150 µs
tpw
Input pulse width t  150 µs
tpw_lim
Output leakage IRED current
t
18
IIRED
-1
µs
150
µs
150
µs
1
µA
Output radiant intensity,
see figure 1, recommended
application circuit
VCC = VIRED = 3.3 V,  = 0°
TXD = high, SD = low, R1 = 1 
Ie
110
170
468 (6)
mW/sr
Output radiant intensity,
see figure 1, recommended
application circuit
VCC = VIRED = 3.3 V,  = 0°, 15°
TXD = high, SD = low, R1 = 1 
Ie
100
130
468 (6)
mW/sr
VCC1 = 3.3 V,  = 0°, 15°
TXD = low or SD = high (receiver is inactive as long
as SD = high)
Ie
0.04
mW/sr
Output radiant intensity
Output radiant intensity, angle
of half intensity
Peak - emission wavelength

p
(7)
875

Spectral bandwidth
Optical rise time,
Optical fall time
Optical output pulse duration
± 24
886
deg
900
45
tropt ,
tfopt
10
Input pulse width 217 ns, 1.152 Mbit/s
topt
207
Input pulse width 125 ns, 4 Mbit/s
topt
117
Input pulse width 250 ns, 4 Mbit/s
topt
242
nm
nm
40
ns
217
227
ns
125
133
ns
250
258
ns
25
%
Optical overshoot
Notes
(1) T
amb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted. All timing data measured with 4 Mbit/s are measured using the IrDA FIR
transmission header. The data given here are valid 5 µs after starting the preamble.
Typical values are for design aid only, not guaranteed nor subject to production testing.
(2) This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent lamps.
(3) IrDA sensitivity definition: minimum irradiance E in angular range, power per unit area. The receiver must meet the BER specification while
e
the source is operating at the minimum intensity in angular range into the minimum half-angular range at the maximum link length.
(4) Maximum irradiance E in angular range, power per unit area. The optical delivered to the detector by a source operating at the maximum
e
intensity in angular range at minimum link length must not cause receiver overdrive distortion and possible related link errors. If placed at the
active output interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification. For more definitions
see the document “Symbols and Terminology” on the Vishay website
(5) Retriggering once during applied optical pulse may occur.
(6) Maximum value is given by eye safety class 1, IEC 60825-1, simplified method.
(7) Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the standard
remote control applications with codes as e.g. Philips RC5/RC6® or RECS 80. When operated under IrDA full range conditions (125 mW/sr)
the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers are used.
Document Number: 81211
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Rev. 1.4, 29-Jul-09
www.vishay.com
5
TFDU6103
Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
RECOMMENDED CIRCUIT DIAGRAM
Vishay Semiconductors transceivers integrate a sensitive
receiver and a built-in power driver. The combination of both
needs a careful circuit board layout. The use of thin, long,
resistive and inductive wiring should be avoided. The inputs
(TXD, SD) and the output RXD should be directly (DC)
coupled to the I/O circuit.
V cc2
R1
V cc1
R2
C1
C3
GND
IRED Anode
V cc
C2
Ground
SD
SD
TXD
TXD
RXD
RXD
IRED Cathode
19789
Fig. 1 - Recommended Application Circuit
The capacitor C1 is buffering the supply voltage and reduces
the influence of the inductance of the power supply line. This
one should be a Tantalum or other fast capacitor to
guarantee the fast rise time of the IRED current. The resistor
R1 is only necessary for higher operating voltages and
elevated temperatures, see derating curve in figure 6, to
avoid too high internal power dissipation.
The capacitors C2 and C3 combined with the resistor R2 (as
the low pass filter) is smoothing the supply voltage VCC1. R2,
C1, C2, and C3 are optional and dependent on the quality of
the supply voltages VCC1 and VCC2 and injected noise. An
unstable power supply with dropping voltage during
transmission may reduce sensitivity (and transmission
range) of the transceiver. The placement of these parts is
critical. It is strongly recommended to position C2 and C3 as
close as possible to the transceiver power supply pins. An
tantalum capacitor should be used for C1 and C3 while a
ceramic capacitor is used for C2.
In addition, when connecting the described circuit to the
power supply, low impedance wiring should be used.
When extended wiring is used the inductance of the power
supply can cause dynamically a voltage drop at VCC2. Often
some power supplies are not able to follow the fast current
rise time. In that case another 4.7 µF (type, see table under
C1) at VCC2 will be helpful.
Keep in mind that basic RF-design rules for circuit design
should be taken into account. Especially longer signal lines
should not be used without termination. See e.g. “The Art of
Electronics” Paul Horowitz, Wienfield Hill, 1989, Cambridge
University Press, ISBN: 0521370957.
TABLE 1 - RECOMMENDED APPLICATION CIRCUIT COMPONENTS
COMPONENT
RECOMMENDED VALUE
VISHAY PART NUMBER
C1, C3
4.7 µF, 16 V
293D 475X9 016B
C2
0.1 µF, ceramic
VJ 1206 Y 104 J XXMT
R1
3.3 V supply voltage: no resistors necessary, the internal
controller is able to control the current
e.g. 2 x CRCW-1206-1R0-F-RT1
R2
10 , 0.125 W
CRCW-1206-10R0-F-RT1
I/O AND SOFTWARE
In the description, already different I/Os are mentioned.
Different combinations are tested and the function verified
with the special drivers available from the I/O suppliers. In
special cases refer to the I/O manual, the Vishay application
notes, or contact directly Vishay Sales, Marketing or
Application.
MODE SWITCHING
The TFDU6103 is in the SIR mode after power on as a
default mode, therefore the FIR data transfer rate has to be
set by a programming sequence using the TXD and SD
inputs as described below. The low frequency mode covers
speeds up to 115.2 kbit/s. Signals with higher data rates
should be detected in the high frequency mode. Lower
frequency data can also be received in the high frequency
mode but with reduced sensitivity.
To switch the transceivers from low frequency mode to the
high frequency mode and vice versa, the programming
sequences described below are required.
www.vishay.com
6
SETTING TO THE HIGH BANDWIDTH MODE
(0.576 Mbit/s to 4 Mbit/s)
1. Set SD input to logic “high”.
2. Set TXD input to logic “high”. Wait ts  200 ns.
3. Set SD to logic “low” (this negative edge latches state of
TXD, which determines speed setting).
4. After waiting th  200 ns TXD can be set to logic “low”. The
hold time of TXD is limited by the maximum allowed pulse
length.
After that TXD is enabled as normal TXD input and the
transceiver is set for the high bandwidth (576 kbit/s to
4 Mbit/s) mode.
Document Number: 81211
For technical questions within your region, please contact one of the following:
Rev. 1.4, 29-Jul-09
[email protected], [email protected], [email protected]
TFDU6103
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors
for 2.4 V to 5.5 V Operation
SETTING TO THE LOWER BANDWIDTH
MODE (2.4 kbit/s to 115.2 kbit/s)
1. Set SD input to logic “high”.
2. Set TXD input to logic “low”. Wait ts  200 ns.
3. Set SD to logic “low” (this negative edge latches state of
TXD, which determines speed setting).
50 %
SD
4. TXD must be held for th  200 ns.
After that TXD is enabled as normal TXD input and the
transceiver is set for the lower bandwidth (9.6 kbit/s to
115.2 kbit/s) mode.
Note
When applying this sequence to the device already in the lower
bandwidth mode, the SD pulse is interpreted as shutdown. In this
case the RXD output of the transceiver may react with a single pulse
(going active low) for a duration less than 2 µs. The operating
software should take care for this condition.
In case the applied SD pulse is longer than 4 µs, no RXD pulse is to
be expected but the receiver startup time is to be taken into account
before the device is in receive condition.
ts
th
High: FIR
TXD
50 %
50 %
Low: SIR
14873
Fig. 2 - Mode Switching Timing Diagram
TABLE 2 - TRUTH TABLE
INPUTS
OUTPUTS
SD
TXD
OPTICAL INPUT IRRADIANCE mW/m2
RXD
High
x
x
Weakly pulled (500 k) to VCC1
0
High
x
Low (active)
Ie
High > 150 µs
x
High
0
Low
<4
High
0
Low
> min. irradiance Ee
< max. irradiance Ee
Low (active)
0
Low
> max. irradiance Ee
x
0
Low
RECOMMENDED SOLDER PROFILES
Temperature (°C)
Solder Profile for Sn/Pb Soldering
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TRANSMITTER
240 °C max.
10 s max. at 230 °C
2 to 4 °C/s
160 °C max.
120 to180 s
primarily for reflow ovens heated by infrared radiation. With
widespread use of forced convection reflow ovens the
Ramp-To-Spike profile is used increasingly. Shown in
figure 4 and 5 are Vishay's recommended profiles for use
with the TFDU6103 transceivers. For more details please
refer to the application note “SMD Assembly Instructions”.
A ramp-up rate less than 0.9 °C/s is not recommended.
Ramp-up rates faster than 1.3 °C/s could damage an optical
part because the thermal conductivity is less than compared
to a standard IC.
90 s max.
Wave Soldering
2 to 4 °C/s
0
19535
50
100
For TFDUxxxx and TFBSxxxx transceiver devices wave
soldering is not recommended.
150
200
250
300
350
Time/s
Fig. 3 - Recommended Solder Profile for Sn/Pb soldering
Lead (Pb)-free, Recommended Solder Profile
The TFDU6103 is a lead (Pb)-free transceiver and qualified
for lead (Pb)-free processing. For lead (Pb)-free solder paste
like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu, there are two standard reflow
profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike
(RTS). The Ramp-Soak-Spike profile was developed
Manual Soldering
Manual soldering is the standard method for lab use.
However, for a production process it cannot be
recommended because the risk of damage is highly
dependent on the experience of the operator. Nevertheless,
we added a chapter to the above mentioned application note,
describing manual soldering and desoldering.
Document Number: 81211
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Rev. 1.4, 29-Jul-09
www.vishay.com
7
TFDU6103
Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
Storage
275
T ≥ 255 °C for 10 s....30 s
250
225
Tpeak = 260 °C
85
80
75
70
65
60
55
T ≥ 217 °C for 70 s max.
200
Temperature/°C
90
Ambient Temperature (°C)
The storage and drying processes for all Vishay transceivers
(TFDUxxxx and TFBSxxx) are equivalent to MSL4. The data
for the drying procedure is given on labels on the packing
and also in the application note “Taping, Labeling, Storage
and Packing”.
50
175
2
150
18097
30 s max.
125
100
90 s to 120 s
2.5
3
3.5
4
4.5
5
5.5
6
Operating Voltage (V) at Duty Cycle 20 %
Fig. 6 - Temperature Derating Diagram
70 s max.
2 °C/s to 4 °C/s
75
2 °C/s to 3 °C/s
50
25
0
0
50
100
150
19532
200
250
300
350
Time/s
Fig. 4 - Solder Profile, RSS Recommendation
280
Tpeak = 260 °C max.
Temperature/°C
240
200
< 4 °C/s
160
1.3 °C/s
120
Time above 217 °C t ≤ 70 s
Time above 250 °C t ≤ 40 s < 2 °C/s
Peak temperature Tpeak = 260 °C
80
40
0
0
TFDU Fig3
50
100
150
200
250
300
Time/s
Fig. 5 - RTS Recommendation
CURRENT DERATING DIAGRAM
Figure 6 shows the maximum operating temperature when
the device is operated without external current limiting
resistor. A power dissipating resistor of 2  is recommended
from the cathode of the IRED to ground for supply voltages
above 4 V. In that case the device can be operated up to
85 °C, too.
www.vishay.com
8
Document Number: 81211
For technical questions within your region, please contact one of the following:
Rev. 1.4, 29-Jul-09
[email protected], [email protected], [email protected]
TFDU6103
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors
for 2.4 V to 5.5 V Operation
PACKAGE DIMENSIONS in millimeters
20111
Fig. 7 - Package Drawing and Solder Footprints for Top and Side View Mounting TFDU6103,
Tolerance ± 0.2 mm if not otherwise mentioned
Document Number: 81211
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Rev. 1.4, 29-Jul-09
www.vishay.com
9
TFDU6103
Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
REEL DIMENSIONS in millimeters
Drawing-No.: 9.800-5090.01-4
Issue: 1; 29.11.05
14017
TAPE WIDTH
(mm)
A MAX.
(mm)
N
(mm)
W1 MIN.
(mm)
W2 MAX.
(mm)
W3 MIN.
(mm)
W3 MAX.
(mm)
24
330
60
24.4
30.4
23.9
27.4
www.vishay.com
10
Document Number: 81211
For technical questions within your region, please contact one of the following:
Rev. 1.4, 29-Jul-09
[email protected], [email protected], [email protected]
TFDU6103
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors
for 2.4 V to 5.5 V Operation
TAPE DIMENSIONS in millimeters
Drawing-No.: 9.700-5251.01-4
Issue: 3; 02.09.05
19824
Fig. 8 - Tape Drawing, TFDU6103 for Top View Mounting, Tolerance ± 0.1 mm
Document Number: 81211
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Rev. 1.4, 29-Jul-09
www.vishay.com
11
TFDU6103
Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
TAPE DIMENSIONS in millimeters
19875
Fig. 9 - Tape Drawing, TFDU6103 for Side View Mounting, Tolerance ± 0.1 mm
www.vishay.com
12
Document Number: 81211
For technical questions within your region, please contact one of the following:
Rev. 1.4, 29-Jul-09
[email protected], [email protected], [email protected]
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1