DMG8880LSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.072 grams (approximate) S D S D S D G D Top View Internal Schematic Top View Ordering Information (Note 3) Part Number DMG8880LSS-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 8 5 Logo G8880LS Part no. YY WW Xth week: 01 ~ 53 1 DMG8880LSS Document number: DS31948 Rev. 4 - 2 4 1 of 6 www.diodes.com Year: “08” = 2008 “09” = 2009 January 2011 © Diodes Incorporated DMG8880LSS Maximum Ratings @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Unit V V IDM Value 30 ±20 11.6 8.5 80 Symbol PD RθJA TJ, TSTG Value 1.43 87 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C Steady State ID Pulsed Drain Current (Note 5) A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 1.5 2.0 V RDS (ON) - 7.0 9.6 10 14 mΩ VSD - 0.7 1.0 V VDS = VGS, ID = 250μA VGS = 10V, ID = 11.6A VGS = 4.5V, ID = 10.7A VGS = 0V, IS = 2.1A Ciss Coss Crss Rg - 1289 187 162 0.97 - pF pF pF Ω Total Gate Charge at 10V Qg - 27.6 - nC Total Gate Charge at 5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Qg Qgs Qgd - 14.4 3.6 4.9 7.04 17.52 36.13 19.67 - nC nC nC ns ns ns ns Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Notes: tD(on) tr tD(off) tf Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 11.6A, IG = 1.0mA VGS = 5V, VDS = 15V, ID = 11.6A, IG = 1.0mA VDD = 15V, VGS = 10V, RGS = 11Ω, ID = 11.6A 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMG8880LSS Document number: DS31948 Rev. 4 - 2 2 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG8880LSS 30 50 VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.5V 30 20 VDS = 5V 25 VGS = 4.5V VGS = 3.2V 20 15 10 TA = 150°C VGS = 3.0V 10 TA = 125°C 5 VGS = 2.2V TA = 85°C TA = 25°C VGS = 2.5V T A = -55°C 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.02 0.015 0.01 VGS = 4.5V VGS = 8.0V 0.005 0 0 0 2 10 20 30 40 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.3 1.1 VGS = 4.5V ID = 10A 0.9 VGS = 10V ID = 20A 0.7 0.5 -50 0.02 TA = 150°C TA = 125°C TA = 85°C 0.01 TA = -55°C 0 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.02 0.015 VGS = 4.5V ID = 10A 0.01 0.005 Fig. 5 On-Resistance Variation with Temperature Document number: DS31948 Rev. 4 - 2 5 0.025 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) DMG8880LSS TA = 25°C 0 1.7 4 VGS = 4.5V 50 1.5 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 40 3 of 6 www.diodes.com VGS = 10V ID = 20A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature January 2011 © Diodes Incorporated DMG8880LSS 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) 18 2.0 IS, SOURCE CURRENT (A) 16 1.6 ID = 1mA 1.2 ID = 250µA 0.8 14 T A = 25°C 12 10 8 6 4 0.4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) T A = 150°C Ciss 1,000 Coss 1,000 TA = 125°C 100 T A = 85°C 10 TA = 25°C Crss 100 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 100 RDS(on) Limited -ID, DRAIN CURRENT (A) NEW PRODUCT 2.4 10 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 T J(max) = 150°C T A = 25°C Single Pulse 0.01 0.1 -VDS, 1 10 DRAIN-SOURCE VOLTAGE (V) Fig. 11 Safe Operation Area DMG8880LSS Document number: DS31948 Rev. 4 - 2 100 4 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG8880LSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 91°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 100 1,000 10,000 Package Outline Dimensions 0.254 NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG8880LSS Document number: DS31948 Rev. 4 - 2 5 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG8880LSS NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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