NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6 Features • • • • http://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP6 Surface Mount Package Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 2 AMPERES 20 VOLTS RDS(on) = 65 m Applications P−Channel 1 2 5 6 • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −20 Volts Gate−to−Source Voltage − Continuous VGS 12 Volts Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) RJA Pd ID IDM 244 0.5 −2.2 −10 °C/W Watts Amps Amps Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) RJA Pd ID IDM 128 1.0 −3.1 −14 °C/W Watts Amps Amps Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) RJA Pd ID IDM 62.5 2.0 −4.4 −20 °C/W Watts Amps Amps Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C Rating 3 4 MARKING DIAGRAM 443 W TSOP−6 CASE 318G Style 1 443 W = Device Code = Work Week PIN ASSIGNMENT Drain Drain Source 1. Minimum FR−4 or G−10PCB, operating to steady state. 2. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), t 5.0 seconds. 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION Package Shipping† NTGS3443T1 TSOP−6 3000 Tape & Reel NTGS3443T1G TSOP−6 3000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 2 1 Publication Order Number: NTGS3443T1/D NTGS3443T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5) Characteristic Symbol Min Typ Max Unit −20 − − − − − − −1.0 −5.0 − − −100 − − 100 −0.60 −0.95 −1.50 − − − 0.058 0.082 0.092 0.065 0.090 0.100 − 8.8 − Ciss − 565 − pF Coss − 320 − pF Crss − 120 − pF td(on) − 10 25 ns tr − 18 45 ns td(off) − 30 50 ns tf − 31 50 ns Qtot − 7.5 15 nC Qgs − 1.4 − nC Qgd − 2.9 − nC (IS = −1.7 Adc, VGS = 0 Vdc) VSD − −0.83 −1.2 Vdc (IS = −1.7 Adc, dIS/dt = 100 A/s) trr − 30 − ns OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 A) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C) IDSS Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) IGSS Vdc Adc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 Adc) VGS(th) Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −4.4 Adc) (VGS = −2.7 Vdc, ID = −3.7 Adc) (VGS = −2.5 Vdc, ID = −3.5 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −4.4 Adc) Vdc gFS mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −20 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, Rg = 6.0 ) Fall Time Total Gate Charge Gate−Source Charge (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −4.4 Adc) Gate−Drain Charge BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage Reverse Recovery Time 4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 8 8 VGS = −2.5 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) VGS = −5 V TJ = 25°C VGS = −3 V VGS = −4.5 V VGS = −4 V VGS = −3.5 V VGS = −2 V 6 4 2 VGS = −1.5 V 0 0.8 0.4 1.2 1.6 4 TJ = 25°C 2 TJ = 125°C TJ = −55°C 1.4 1.8 2.2 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS) Figure 1. On−Region Characteristics ID = −4.4 A TJ = 25°C 0.3 0.25 0.2 0.15 0.1 0.05 2.5 2 3 3.5 4 4.5 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 0.16 TJ = 25°C 0.14 VGS = −2.5 V 0.12 VGS = −2.7 V 0.1 0.08 VGS = −4.5 V 0.06 0.04 0 1 2 3 4 5 6 7 8 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100 1.5 TJ = 125°C ID = −4.4 A VGS = −4.5 V TJ = 100°C 1.3 1.2 1.1 1 0.9 10 1 TJ = 25°C 0.1 0.8 0.7 −50 2.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.35 1.4 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.4 0 1.5 6 0 0.6 2 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS) 0 VDS≥ = −10 V VGS = 0 V 0.01 −25 0 25 50 75 100 125 150 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 5 1200 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1000 C, CAPACITANCE (pF) QT TJ = 25°C VGS = 0 V 800 600 Ciss 400 Coss 200 VGS 4 3 Q1 Q2 2 1 TJ = 25°C ID = −4.4 A Crss 0 2 4 6 8 10 12 14 16 18 0 20 1 2 3 4 5 6 7 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1.3 8 4 ID = −250 A 1.2 1.1 1 0.9 0.8 0.7 0.6 −50 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −IS, SOURCE CURRENT (AMPS) VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 0 −25 0 25 50 75 100 125 150 VGS = 0 V 3 TJ = 150°C 2 TJ = 25°C 1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ, JUNCTION TEMPERATURE (°C) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 20 POWER (W) 16 12 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 11. Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E−04 Single Pulse 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient http://onsemi.com 5 1E+03 NTGS3443T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE K A L 6 S 1 5 4 2 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 D G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches Figure 13. TSOP−6 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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