MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) • • • • • • • B1 C2 E1 B C B2 E2 C1 G H Mechanical Data • • SOT-363 A K Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: KNM, See Page 5 Ordering & Date Code Information: See Page 5 Weight: 0.006 grams (approximate) Maximum Ratings, NPN 5551 Section M J D F L E1, B1, C1 = PNP5401 Section E2, B2, C2 = NPN5551 Section Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm @TA = 25°C unless otherwise specified Symbol NPN5551 Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V (Note 1) IC 200 mA (Note 1, 2) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Maximum Ratings, PNP 5401 Section @TA = 25°C unless otherwise specified Symbol PNP5401 Unit Collector-Base Voltage Characteristic VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5.0 V (Note 1) IC -200 mA (Note 1, 2) Pd 200 mW RθJA 625 K/W Tj, TSTG -55 to +150 °C Collector Current – Continuous Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Maximum combined dissipation. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30171 Rev. 9 - 2 1 of 5 www.diodes.com MMDT5451 © Diodes Incorporated Electrical Characteristics, NPN 5551 Section @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Max Unit Collector-Base Breakdown Voltage Test Condition V(BR)CBO 180 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C Collector Cutoff Current ICBO ⎯ 50 nA μA Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 ⎯ 250 ⎯ ⎯ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Cobo ⎯ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 50 250 ⎯ VCE = 10V, IC = 1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 10mA, f = 100MHz Noise Figure NF ⎯ 8.0 dB VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz ON CHARACTERISTICS (Note 6) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Electrical Characteristics, PNP 5401 Section @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO -160 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ⎯ V IC = -1.0mA, IB = 0 V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C Emitter-Base Breakdown Voltage Test Condition Collector Cutoff Current ICBO ⎯ -50 nA μA Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0 hFE 50 60 50 ⎯ 240 ⎯ ⎯ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Cobo ⎯ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ⎯ VCE = -10V, IC = -1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -10mA, f = 100MHz Noise Figure NF ⎯ 8.0 dB VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz ON CHARACTERISTICS (Note 6) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: 6. Short duration pulse test used to minimize self-heating effect. DS30171 Rev. 9 - 2 2 of 5 www.diodes.com MMDT5451 © Diodes Incorporated 0.15 150 100 50 IC IB = 10 0.14 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 200 0.13 0.12 TA = 150°C 0.11 0.10 0.09 0.08 T A = 25°C 0.07 0.06 0.05 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature (Total Device) 0.04 200 TA = -50°C 1 1.0 1,000 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5V TA = 150°C 100 TA = 25°C TA = -50°C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current (NPN5551) 0.9 0.6 T A = 25°C 0.5 0.4 TA = 150°C 0.3 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 10 TA = -50°C 0.7 10.0 100 VCE = 5V 0.8 0.2 0.1 100 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current (NPN5551) 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current (NPN5551) 100 IC IB = 10 1.0 TA = 150°C 0.1 TA = -50°C TA = 25°C 1 1 DS30171 Rev. 9 - 2 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current (NPN5551) 0.01 1 100 3 of 5 www.diodes.com 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6, Collector Emitter Saturation Voltage vs. Collector Current (PNP5401) MMDT5451 © Diodes Incorporated 10,000 VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 hFE, DC CURRENT GAIN 1,000 100 10 1 0.9 VCE = 5V 0.8 0.7 0.6 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7, DC Current Gain vs. Collector Current (PNP5401) T A = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 0.1 0.1 1 TA = -50°C 1.0 10 IC, COLLECTOR CURRENT (mA) Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401) 100 1,000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 10V 100 10 1 1 DS30171 Rev. 9 - 2 10 IC, COLLECTOR CURRENT (mA) Fig. 9, Gain Bandwidth Product vs. Collector Current (PNP5401) 100 4 of 5 www.diodes.com MMDT5451 © Diodes Incorporated Ordering Information Notes: 7. (Note 7) Device Packaging Shipping MMDT5451-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. KNM Date Code Key Year 1998 Code J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 YM Marking Information KNM = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30171 Rev. 9 - 2 5 of 5 www.diodes.com MMDT5451 © Diodes Incorporated