DIODES MMDT5451_2

MMDT5451
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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Complementary Pair
One 5551-Type NPN
One 5401-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
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B1
C2
E1
B C
B2
E2
C1
G
H
Mechanical Data
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•
SOT-363
A
K
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: KNM, See Page 5
Ordering & Date Code Information: See Page 5
Weight: 0.006 grams (approximate)
Maximum Ratings, NPN 5551 Section
M
J
D
F
L
E1, B1, C1 = PNP5401 Section
E2, B2, C2 = NPN5551 Section
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
—
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
@TA = 25°C unless otherwise specified
Symbol
NPN5551
Unit
Collector-Base Voltage
Characteristic
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
(Note 1)
IC
200
mA
(Note 1, 2)
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 1)
Operating and Storage Temperature Range
Maximum Ratings, PNP 5401 Section
@TA = 25°C unless otherwise specified
Symbol
PNP5401
Unit
Collector-Base Voltage
Characteristic
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5.0
V
(Note 1)
IC
-200
mA
(Note 1, 2)
Pd
200
mW
RθJA
625
K/W
Tj, TSTG
-55 to +150
°C
Collector Current – Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30171 Rev. 9 - 2
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MMDT5451
© Diodes Incorporated
Electrical Characteristics, NPN 5551 Section
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
Test Condition
V(BR)CBO
180
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
⎯
V
IE = 10μA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Collector Cutoff Current
ICBO
⎯
50
nA
μA
Emitter Cutoff Current
IEBO
⎯
50
nA
VEB = 4.0V, IC = 0
hFE
80
80
30
⎯
250
⎯
⎯
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Cobo
⎯
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
⎯
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
⎯
8.0
dB
VCE = 5.0V, IC = 200μA,
RS = 1.0kΩ, f = 1.0kHz
ON CHARACTERISTICS (Note 6)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Electrical Characteristics, PNP 5401 Section
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-160
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-150
⎯
V
IC = -1.0mA, IB = 0
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100°C
Emitter-Base Breakdown Voltage
Test Condition
Collector Cutoff Current
ICBO
⎯
-50
nA
μA
Emitter Cutoff Current
IEBO
⎯
-50
nA
VEB = -3.0V, IC = 0
hFE
50
60
50
⎯
240
⎯
⎯
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.2
-0.5
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Cobo
⎯
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
40
200
⎯
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = -10V, IC = -10mA,
f = 100MHz
Noise Figure
NF
⎯
8.0
dB
VCE = -5.0V, IC = -200μA,
RS = 10Ω, f = 1.0kHz
ON CHARACTERISTICS (Note 6)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Notes:
6. Short duration pulse test used to minimize self-heating effect.
DS30171 Rev. 9 - 2
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MMDT5451
© Diodes Incorporated
0.15
150
100
50
IC
IB = 10
0.14
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
200
0.13
0.12
TA = 150°C
0.11
0.10
0.09
0.08
T A = 25°C
0.07
0.06
0.05
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature (Total Device)
0.04
200
TA = -50°C
1
1.0
1,000
VBE(ON), BASE EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5V
TA = 150°C
100
TA = 25°C
TA = -50°C
10
1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current (NPN5551)
0.9
0.6
T A = 25°C
0.5
0.4
TA = 150°C
0.3
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
10
TA = -50°C
0.7
10.0
100
VCE = 5V
0.8
0.2
0.1
100
1,000
fT, GAIN BANDWIDTH PRODUCT (MHz)
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current (NPN5551)
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current (NPN5551)
100
IC
IB = 10
1.0
TA = 150°C
0.1
TA = -50°C
TA = 25°C
1
1
DS30171 Rev. 9 - 2
10
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current (NPN5551)
0.01
1
100
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10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6, Collector Emitter Saturation Voltage
vs. Collector Current (PNP5401)
MMDT5451
© Diodes Incorporated
10,000
VBE(ON), BASE EMITTER VOLTAGE (V)
1.0
hFE, DC CURRENT GAIN
1,000
100
10
1
0.9
VCE = 5V
0.8
0.7
0.6
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7, DC Current Gain vs. Collector Current (PNP5401)
T A = 25°C
0.5
0.4
TA = 150°C
0.3
0.2
0.1
0.1
1
TA = -50°C
1.0
10
IC, COLLECTOR CURRENT (mA)
Fig. 8, Base Emitter Voltage
vs. Collector Current (PNP5401)
100
1,000
ft, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 10V
100
10
1
1
DS30171 Rev. 9 - 2
10
IC, COLLECTOR CURRENT (mA)
Fig. 9, Gain Bandwidth Product
vs. Collector Current (PNP5401)
100
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MMDT5451
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Ordering Information
Notes:
7.
(Note 7)
Device
Packaging
Shipping
MMDT5451-7-F
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
KNM
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
YM
Marking Information
KNM = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
2004
R
May
5
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30171 Rev. 9 - 2
5 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated