SPICE MODEL: CTA2P1N CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features · · · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 Lead Free/RoHS Compliant (Note 1) A Mechanical Data · · · · · · · · · A80 B C Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 G H Moisture Sensitivity: Level 1 per J-STD-020C K Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). M J D L F Terminal Connections: See Diagram Marking: A80, See Page 3 CQ1 Ordering Information: See Page 3 GQ2 SQ2 Q1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Weight: 0.006 grams (approx.) Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range Symbol Value Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Unit @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element Characteristic @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V VGSS ±20 ±40 V ID 115 73 800 mA Gate-Source Voltage Drain Current (Note 2) Continuous Pulsed Continuous Continuous @ 100°C Pulsed Notes: 1. No purposefully added lead. DS30296 Rev. 7 - 2 1 of 7 www.diodes.com CTA2P1N ã Diodes Incorporated Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element NEW PRODUCT @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 ¾ V VGS = 0V, ID = 10mA µA VDS = 60V, VGS = 0V OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C IDSS ¾ ¾ 1.0 500 IGSS ¾ ¾ ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ¾ 2.0 V VDS = VGS, ID =-250mA ¾ 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 7.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 11 20 ns Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ Tj = 25°C @ Tj = 125°C RDS (ON) VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Note: 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short test pulse used to minimize self-heating effect. DS30296 Rev. 7 - 2 2 of 7 www.diodes.com CTA2P1N Notes: (Note 4) Device Packaging Shipping CTA2P1N-7-F SOT-363 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A80 YM NEW PRODUCT Ordering Information A80 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30296 Rev. 7 - 2 3 of 7 www.diodes.com CTA2P1N MMBT4403 Section NEW PRODUCT 30 20 CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -30 -10 VCE, COLLECTOR-EMITTER VOLTAGE (V) REVERSE VOLTAGE (V) Fig. 1 Typical Capacitance 1.6 1.4 1.2 IC = 10mA IC = 100mA I = 300mA C IC = 30mA IC = 1mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 1.0 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 0 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current DS30296 Rev. 7 - 2 4 of 7 www.diodes.com VCE = 5V 0.9 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current CTA2P1N 1000 hFE, DC CURRENT GAIN fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 10 1 VCE = 5V 100 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current 200 PD, POWER DISSIPATION (mW) NEW PRODUCT MMBT4403 Section 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Max Power Dissipation vs Ambient Temperature (Total Device) DS30296 Rev. 7 - 2 5 of 7 www.diodes.com CTA2P1N 2N7002 Section 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V ID, DRAIN-SOURCE CURRENT (A) 0.8 0.6 Tj = 25°C 6 5 VGS = 5.0V 5.5V 4 5.0V 3 VGS = 10V 0.4 2 0.2 1 0 0 0 1 3 2 0 5 4 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 9 On-Resistance vs Drain Current (2N7002) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 On-Region Characteristics (2N7002) 6 3.0 5 2.5 4 ID = 500mA ID = 50mA 3 2.0 2 1.5 1 VGS = 10V, ID = 200mA 1.0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance vs Junction Temperature (2N7002) 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002) 10 VGS, GATE SOURCE VOLTAGE (V) NEW PRODUCT 1.0 VDS = 10V 9 8 7 6 TA = +125°C TA = +75°C 5 4 3 TA = -55°C TA = +25°C 2 1 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 12 Typical Transfer Characteristics (2N7002) DS30296 Rev. 7 - 2 6 of 7 www.diodes.com CTA2P1N IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30296 Rev. 7 - 2 7 of 7 www.diodes.com CTA2P1N ã Diodes Incorporated