SPICE MODEL: CTA2N1P CTA2N1P Lead-free COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features · · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 Lead Free/RoHS Compliant (Note 2) A Dim Min Max A 0.10 0.30 Mechanical Data B 1.15 1.35 · · C 2.00 2.20 D 0.65 Nominal A03 Case: SOT-363 B C Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Terminal Connections: See Diagram H Terminals: Solderable per MIL-STD-202, Method 208 K Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). M J D L F Marking: A03, See Page 3 Ordering Information: See Page 3 CQ1 GQ2 SQ2 EQ1 BQ1 DQ2 F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Weight: 0.006 grams (approx.) Q1 Q2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Value Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Maximum Ratings, Q1, MMBT4401 NPN Transistor Element Characteristic Unit @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Collector Current - Continuous Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS £ 1.0MW VDGR -50 V ±20 V -130 mA Gate-Source Voltage Continuous VGSS Drain Current Continuous ID Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30295 Rev. 6 - 2 1 of 7 www.diodes.com CTA2N1P ã Diodes Incorporated Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element NEW PRODUCT @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 100mA, IC = 0 ICEX ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ¾ ¾ ¾ 300 ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ¾ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ¾ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 ¾ Output Admittance hoe 1.0 30 mS fT 250 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = ¾ 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50 ¾ ¾ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±20V, VDS = 0V OFF CHARACTERISTICS (Note 3) ON CHARACTERISTICS (Note 3) VGS(th) -0.8 ¾ -2.0 V VDS = VGS, ID = -1mA RDS (ON) ¾ ¾ 10 W VGS = -5V, ID = 0.100A gFS .05 ¾ ¾ S VDS = -25V, ID = 0.1A Input Capacitance Ciss ¾ ¾ 45 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 12 pF Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Notes: 3. Short duration pulse test used to minimize self-heating effect. DS30295 Rev. 6 - 2 2 of 7 www.diodes.com CTA2N1P Notes: (Note 4) Device Packaging Shipping CTA2N1P-7-F SOT-363 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM NEW PRODUCT Ordering Information A03 Date Code Key Year 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30295 Rev. 6 - 2 3 of 7 www.diodes.com CTA2N1P MMBT4401 Section 1000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 150 100 50 TA = 125°C 100 TA = -25°C TA = +25°C 10 VCE = 1.0V 0 0 25 50 75 100 125 150 175 1 200 0.1 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs Ambient Temperature (Total Device) 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 2.0 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) NEW PRODUCT 200 Cibo 10 5.0 Cobo 1.0 0.1 1.0 10 50 1.8 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance DS30295 Rev. 6 - 2 IC = 30mA IC = 1mA IC = 10mA 0.01 0.1 1 100 10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 4 of 7 www.diodes.com CTA2N1P MMBT4401 Section VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C 0 10 1 1000 100 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) NEW PRODUCT IC IB = 10 VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.5 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30295 Rev. 6 - 2 5 of 7 www.diodes.com CTA2N1P BSS84 Section -1.0 TA = 25° C VGS = 5V 500 -0.8 4.5V ID, DRAIN CURRENT (A) ID, DRAIN-TO-SOURCE CURRENT (mA) NEW PRODUCT 600 400 300 3.5V 200 3.0V 100 0 1 2 3 4 -0.6 TA = 25° C TA = 125° C -0.4 -0.2 2.5V 0 TA = -55° C 5 -0.0 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Fig. 8, Drain Source Current vs. Drain Source Voltage -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 9, Drain Current vs. Gate Source Voltage 15 10 VGS = -10V ID = -0.13A 9 8 12 7 6 9 5 4 6 3 2 3 TA = 125° C 1 TA = 25° C 0 0 1 2 3 5 4 0 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 10, On Resistance vs. Gate Source Voltage DS30295 Rev. 6 - 2 6 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 11, On-Resistance vs. Junction Temperature CTA2N1P BSS84 Section NEW PRODUCT 25.0 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 12, On-Resistance vs. Drain Current IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30295 Rev. 6 - 2 7 of 7 www.diodes.com CTA2N1P