LMN400B01 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR Product Summary Features Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Q1 PNP Transistor 10K 220 Q2 N-MOSFET ⎯ ⎯ ⎯ 37K • • • • • Figure 2 2 Description Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data LMN400B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA . It also contains a discrete N-MOSFET with gate pull-down resistor that can be used as control. The component devices can be used as a part of a circuit or as a stand alone discrete device. • • • • • • Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.016 grams (approximate) 6 5 4 1 2 3 Top View Internal Schematic Top View Ordering Information (Note 4) Notes: Part Number Case Packaging LMN400B01-7 SOT26 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code 2006 T Jan 1 LMN400B01 Document number: DS30699 Rev. 8 - 2 2007 U Feb 2 PM3 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., Z = 2012 M = Month, e.g., 9 = September YM PM3 ….. ….. Mar 3 Apr 4 2012 Z May 5 2013 A Jun 6 1 of 9 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 2016 D Oct O 2017 E Nov N Dec D July 2012 © Diodes Incorporated LMN400B01 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value PD 300 mW Power Derating Factor above +100°C PDER 2.4 mW/°C Output Current IOUT 400 mA Power Dissipation (Note 5) Unit Thermal Characteristics Characteristic Operating and Storage Temperature Range Symbol Value TJ, TSTG -55 to +150 °C RθJA 417 °C/W Thermal Resistance, Junction to Ambient Air (Note 5) Unit Maximum Ratings: Pre-Biased PNP Transistor (Q1) (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage VCC -50 V VIN -6 to +5 V IC -400 mA Input Voltage Output Current Maximum Ratings: ESD Protected N-Channel MOSFET (Q2) (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Drain Current (Note 5) Continuous Pulsed (tp < 50µS) Continuous (VGS = 10V) Pulsed (tp <10µS, Duty Cycle <1%) Continuous Source Current Note: Symbol Value Unit VDSS 60 V VDGR 60 V VGSS ID IS +/-20 +/-40 115 800 115 V mA mA 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. LMN400B01 Document number: DS30699 Rev. 8 - 2 2 of 9 www.diodes.com July 2012 © Diodes Incorporated LMN400B01 Electrical Characteristics: Pre-Biased PNP Transistor (Q1) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition Collector-Base Cut Off Current ICBO ⎯ ⎯ -500 nA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current ICEO ⎯ ⎯ -1 µA VCE = -50V, IB = 0 Collector-Base Breakdown Voltage V(BR)CBO -50 ⎯ ⎯ V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 ⎯ ⎯ V IC = -2mA, IB = 0 Input Off Voltage VI(OFF) -0.3 ⎯ ⎯ V VCE = -5V, IC = -100µA Ouput Current IO(OFF) ⎯ ⎯ -1 µA VCC = -50V, VI = 0V ⎯ -0.06 -0.15 V IC = -10mA, IB = -0.3mA VCE(SAT) ⎯ -0.18 -0.30 V IC = -300mA, IB= -30mA ⎯ -0.28 -0.60 V IC = -500mA, IB = -50mA 55 220 ⎯ ⎯ VCE = -5V, IC = -50mA 55 260 ⎯ ⎯ VCE = -5V, IC = - 100mA 55 265 ⎯ ⎯ VCE = -5V, IC = -200 mA 55 225 ⎯ ⎯ VCE = -5V, IC = -400mA VI(ON) -3.0 -1.5 ⎯ VDC VO = -0.3V, IIC = -2mA Ii ⎯ -18 -45 mA VI = -5V VBE(ON) ⎯ -1.2 -1.6 V ⎯ -1.9 -2.5 ⎯ -5.25 -6.00 ON CHARACTERISTICS (Note 6) Collector-Emitter Saturation Voltage DC Current Gain Input On Voltage Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage hFE VBE(SAT) V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA IC = -400mA, IB = -20mA Input Resistor (Base), +/- 30% R2 0.154 0.220 0.286 KΩ ⎯ Pull-up Resistor (Base to VCC supply), +/- 30% R1 7 10 13 KΩ ⎯ R1/R2 36 45 55 ⎯ ⎯ fT ⎯ 200 ⎯ MHz Resistor Ratio (Input Resistor/Pullup resistor) SMALL SIGNAL CHARACTERISTICS Gain Bandwidth Product VCE = -10V, IE = -5mA, f = 100MHz * Pulse Test: Pulse width, tp <300µs, Duty Cycle, d ≤ 0.02 Note: 6. Short duration pulse test used to minimize self-heating effect. LMN400B01 Document number: DS30699 Rev. 8 - 2 3 of 9 www.diodes.com July 2012 © Diodes Incorporated LMN400B01 Electrical Characteristics: ESD Protected N-Channel MOSFET (Q2) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage V(BR)DSS 60 ⎯ ⎯ V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VGS =0V, VDS = 60V OFF CHARACTERISTICS (Note 6) Gate-Body Leakage Current, Forward IGSSF ⎯ ⎯ 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR ⎯ ⎯ -0.95 mA VGS = -20V, VDS = 0V VGS(th) 1 1.6 2.5 V ⎯ 0.09 1.5 ⎯ 0.6 3.75 ON CHARACTERISTICS (Note 6) Gate Source Threshold Voltage Static Drain-Source On-State Voltage VDS(on) On-State Drain Current ID(on) Static Drain-Source On Resistance RDS(on) ⎯ 500 ⎯ ⎯ 1.6 3 ⎯ 1.2 2 VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA V VGS = 10V, ID = 500mA mA VGS = 10V, VDS ≥ 2*VDS(ON) VGS = 5V, ID = 50mA Ω VGS = 10V, ID = 500mA Forward Transconductance gFS 80 260 ⎯ mS Gate Pull-Down Resistor, +/- 35% R3 ⎯ 37 ⎯ kΩ VDS ≥2*VDS(ON), ID = 200 mA ⎯ DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5 pF Turn-On Delay Time td(on) ⎯ ⎯ 20 ns Turn-Off Delay Time td(off) ⎯ ⎯ 40 ns VDS = -25V, VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS* VDD = 30V, VGS =10V, ID = 200mA, RG = 25Ω, RL = 150Ω SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) aximum Pulsed Drain-Source Diode Forward Current VSD ⎯ 0.88 1.5 V IS ⎯ ⎯ 300 mA ⎯ ISM ⎯ ⎯ 800 mA ⎯ VGS = 0V, IS = 300 mA* * Pulse Test: Pulse width, tp <300µs, Duty Cycle, d ≤0.02 500 350 Note 5 lb = 8mA IC, COLLECTOR CURRENT (mA) 300 PD, POWER DISSIPATION (mW) lb = 7mA TA = 25°C 450 250 200 150 100 50 lb = 9mA 400 lb = 10mA 350 lb = 6mA lb = 5mA lb = 4mA lb = 3mA 300 lb = 2mA 250 200 lb = 1mA 150 100 50 0 0 75 150 50 175 25 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Max Power Dissipation vs. Ambient Temperature LMN400B01 Document number: DS30699 Rev. 8 - 2 4 of 9 www.diodes.com 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCE_SAT COLLECTOR VOLTAGE(V) Fig. 4 Output Current vs. Voltage Drop (Pass Element PNP) July 2012 © Diodes Incorporated LMN400B01 Pre-Biased PNP Transistor Characteristics TA = -55° C T A = 25°C TA = 125°C TA = 85°C T A = 150°C VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) IC/IB = 10 IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC TA = 150°C TA = 25°C TA = 85°C VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) TA = -55° C TA = 150° C TA = 25°C TA = 85°C IC/IB = 10 VCE = 5V T A = 125°C TA = 150°C TA = -55° C T A = 25°C TA = 85°C IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC VCE = 5V TA =-55° C TA = 125°C IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC IC/IB = 10 TA = 125°C IC/IB = 20 IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC T A = 150°C hFE, DC CURRENT GAIN TA = 125°C TA = 85°C TA = 25°C TA =-55 °C IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC LMN400B01 Document number: DS30699 Rev. 8 - 2 5 of 9 www.diodes.com July 2012 © Diodes Incorporated LMN400B01 Typical N-Channel MOSFET (Q2) Characteristics T A = 25°C VDS = 10V VGS = 10V T A =-55°C 1.0 TA = 25°C VGS = 5V VGS = 8V 0.8 VGS = 4V 0.6 0.4 0.2 T A = 125°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6V TA = 85°C T A = 150°C VGS = 3V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics 0 5 4 2 1 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Transfer Characteristics 5 2.2 VGS = 5V Pulsed VDS = 10V VDS = VGS ID = 0.25mA Pulsed 2 1.8 T A = 125°C TA = 150° C 1.6 TA = 85°C 1.4 TA = 25° C 1.2 TA = -55°C 1.0 -75 0 25 50 75 100 125 150 -50 -25 TJ, JUNCTION TEMPERATURE (°C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current 4 TA = 125 °C T A = 25°C Pulsed RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W) VGS = 10V Pulsed TA = 150 °C TA = 85° C TA = 25°C T A = -55°C ID = 115mA ID = 50mA 0 1 VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current LMN400B01 Document number: DS30699 Rev. 8 - 2 6 of 9 www.diodes.com July 2012 © Diodes Incorporated LMN400B01 VGS = 10V Pulsed ID = 300mA ID = 150mA IDR, REVERSE DRAIN CURRENT (A) Typical N-Channel MOSFET (Q2) Characteristics (cont.) VGS = 0V Pulsed TA = 125°C T A = 150°C TA = 85°C TA = 25° C T A = 0°C TA = -25°C TA = -55° C 0 gFS, FORWARD TRANSCONDUCTANCE (mS) IS, REVERSE DRAIN CURRENT (A) Tj, JUNCTION TEMPERATURE (°C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature VGS = 10V TA= 25°C Pulsed VGS = 0V TA = -25° C TA = -55° C T A = 150°C TA = 25°C TA = 125° C TA = 85°C 1 LMN400B01 Document number: DS30699 Rev. 8 - 2 7 of 9 www.diodes.com July 2012 © Diodes Incorporated LMN400B01 Application Details Vin PNP Transistor and ESD Protected N-MOSFET integrated as one in LMN400E01 can be used as a discrete entity for general applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Figure 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400mA. The MOSFET Switch draws no current, hence the loading of the control circuitry is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Figure 21 for one example of a typical application circuit used in conjunction with a voltage regulator as a part of power management system). E VOUT C Q1 PNP B R1 10K LOAD R2 220 D S NMOSFET Q2 G Control 37K Figure 20 Circuit Diagram 5V Supply U1 U3 Load Switch Vin U2 Vin Control Logic Circuit (PIC, Comparator etc) 1 Control 2 OUT1 3 GND E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 6 Vout Point of Load IN OUT 5 4 Gnd Voltage Regulator LMN400B01 Diodes Inc. Figure 21 Typical Application Circuirt Package Outline Dimensions A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K J M D LMN400B01 Document number: DS30699 Rev. 8 - 2 L 8 of 9 www.diodes.com July 2012 © Diodes Incorporated LMN400B01 Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 G C1 C2 2.40 0.95 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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