ONSEMI BC239C

Order this document
by BC237/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
Symbol
BC
237
BC
238
BC
239
Unit
Collector – Emitter Voltage
VCEO
45
25
25
Vdc
Collector – Emitter Voltage
VCES
50
30
30
Vdc
Emitter – Base Voltage
VEBO
6.0
5.0
5.0
Vdc
Rating
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
45
25
25
—
—
—
—
—
—
V
Emitter – Base Breakdown Voltage
(IE = 100 mA, IC = 0)
BC237
BC238
BC239
V(BR)EBO
6.0
5.0
5.0
—
—
—
—
—
—
V
BC238
BC239
—
—
0.2
0.2
15
15
nA
(VCE = 50 V, VBE = 0)
BC237
—
0.2
15
(VCE = 30 V, VBE = 0) TA = 125°C
BC238
BC239
—
—
0.2
0.2
4.0
4.0
(VCE = 50 V, VBE = 0) TA = 125°C
BC237
—
0.2
4.0
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
ICES
µA
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Typ
Max
BC237A
BC237B/238B
BC237C/238C/239C
—
—
—
90
150
270
—
—
—
(IC = 2.0 mA, VCE = 5.0 V)
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
120
120
120
200
380
—
—
170
290
500
800
800
220
460
800
(IC = 100 mA, VCE = 5.0 V)
BC237A
BC237B/238B
BC237C/238C/239C
—
—
—
120
180
300
—
—
—
—
—
0.07
0.2
0.2
0.6
0.8
—
—
0.6
—
0.83
1.05
—
0.55
—
0.5
0.62
0.83
—
0.7
—
BC237
BC238
BC239
—
—
—
100
120
140
—
—
—
BC237
BC238
BC239
150
150
150
200
240
280
—
—
—
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
Collector – Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
hFE
—
VCE(sat)
BC237/BC238/BC239
BC237/BC239
BC238
Base – Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = 100 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
VBE(on)
V
V
V
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
Collector–Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
—
—
4.5
pF
Emitter–Base Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
—
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz, ∆f = 200 Hz)
2
NF
dB
BC239
BC237
BC238
BC239
—
2.0
4.0
—
—
—
2.0
2.0
2.0
10
10
4.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
VCE = 10 V
TA = 25°C
1.5
0.9
0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.0
0.8
0.6
0.4
0.7
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 2. “Saturation” and “On” Voltages
10
400
300
7.0
200
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
TA = 25°C
VCE = 10 V
TA = 25°C
100
80
60
TA = 25°C
Cib
5.0
3.0
Cob
2.0
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
1.0
0.4
0.6 0.8 1.0
r b, BASE SPREADING RESISTANCE (OHMS)
Figure 3. Current–Gain — Bandwidth Product
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 4. Capacitances
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25°C
140
130
120
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 5. Base Spreading Resistance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC237/D