Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage VCES 50 30 30 Vdc Emitter – Base Voltage VEBO 6.0 5.0 5.0 Vdc Rating Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) BC237 BC238 BC239 V(BR)CEO 45 25 25 — — — — — — V Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) BC237 BC238 BC239 V(BR)EBO 6.0 5.0 5.0 — — — — — — V BC238 BC239 — — 0.2 0.2 15 15 nA (VCE = 50 V, VBE = 0) BC237 — 0.2 15 (VCE = 30 V, VBE = 0) TA = 125°C BC238 BC239 — — 0.2 0.2 4.0 4.0 (VCE = 50 V, VBE = 0) TA = 125°C BC237 — 0.2 4.0 Collector Cutoff Current (VCE = 30 V, VBE = 0) ICES µA REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max BC237A BC237B/238B BC237C/238C/239C — — — 90 150 270 — — — (IC = 2.0 mA, VCE = 5.0 V) BC237 BC239 BC237A BC237B/238B BC237C/238C/239C 120 120 120 200 380 — — 170 290 500 800 800 220 460 800 (IC = 100 mA, VCE = 5.0 V) BC237A BC237B/238B BC237C/238C/239C — — — 120 180 300 — — — — — 0.07 0.2 0.2 0.6 0.8 — — 0.6 — 0.83 1.05 — 0.55 — 0.5 0.62 0.83 — 0.7 — BC237 BC238 BC239 — — — 100 120 140 — — — BC237 BC238 BC239 150 150 150 200 240 280 — — — Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) Collector – Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) hFE — VCE(sat) BC237/BC238/BC239 BC237/BC239 BC238 Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base–Emitter On Voltage (IC = 100 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) VBE(on) V V V DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz Collector–Base Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo — — 4.5 pF Emitter–Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo — 8.0 — pF Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, ∆f = 200 Hz) 2 NF dB BC239 BC237 BC238 BC239 — 2.0 4.0 — — — 2.0 2.0 2.0 10 10 4.0 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 VCE = 10 V TA = 25°C 1.5 0.9 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TA = 25°C VCE = 10 V TA = 25°C 100 80 60 TA = 25°C Cib 5.0 3.0 Cob 2.0 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 1.0 0.4 0.6 0.8 1.0 r b, BASE SPREADING RESISTANCE (OHMS) Figure 3. Current–Gain — Bandwidth Product 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 10 Figure 5. Base Spreading Resistance Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. 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