Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES 100 80 Vdc Collector – Base Voltage VCBO 100 80 Vdc Emitter – Base Voltage VEBO 12 Vdc Collector Current — Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 100 80 — — — — 100 80 — — — — 12 — — — — — — 100 100 — — 100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Vdc V(BR)EBO Vdc ICBO BC372 BC373 Emitter Cutoff Current (VEB = 10 V, IC = 0) IEBO Vdc nAdc nAdc 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 8.0 10 — — — 160 Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE K Collector – Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VCE(sat) — 1.0 1.1 Vdc Base – Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VBE(sat) — 1.4 2.0 Vdc fT 100 200 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 10 25 pF Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz) NF — 2.0 — dB DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 100 K 1.6 VBE(sat) @ IC/IB = 100 VCE = 5 V 1.4 1.2 25°C VOLTAGE (V) hFE, DC CURRENT GAIN TA = 125°C –55°C 10 K VBE(on) @ VCE = 5 V 1 0.8 VCE(sat) @ IC/IB = 100 0.6 0.4 0.2 1K 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 5 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 500 Figure 2. “Saturation” and “On” Voltages 100 1000 C, CAPACITANCE (pF) VCE = 5 V TJ = 25°C 100 10 0.6 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. Current–Gain — Bandwidth Product 2 10 600 Cib 10 1 0.1 Cob 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 4. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 Motorola reserves the right to make changes without further notice to any products herein. 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