SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FZT591 ✪ C E COMPLEMENTARY TYPE FZT491 PARTMARKING DETAIL - FZT591 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltages SYMBOL MIN. MAX. UNIT CONDITIONS. V(BR)CBO -80 V V(BR)CEO -60 V IC=-10mA, IB=0* V(BR)EBO -5 V IE=-100µ A, IC=0 IC=-100µ A, IE=0 Collector Cut-Off Current ICBO -100 nA VCB=-60V Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=0 Collector-Emitter Cut-Off Current ICES -100 nA VCES=-60V Emitter Saturation Voltages VCE(sat) -0.3 -0.6 V V IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* VBE(sat) -1.2 V IC=-1A, IB=-100mA* -1.0 V IC=-1A, VCE=-5V* Base-Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT 150 Output Capacitance Cobo IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 300 MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT591 datasheet 3 - 195 VCB=-10V, f=1MHz