VISHAY SI5515CDC

Si5515CDC
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
20
- 20
ID (A)a Qg (Typ.)
RDS(on) (Ω)
0.036 at VGS = 4.5 V
4g
0.041 at VGS = 2.5 V
4g
0.050 at VGS = 1.8 V
g
4
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
RoHS
6.5 nC
COMPLIANT
APPLICATIONS
• Load Switch for Portable Devices
g
0.100 at VGS = - 4.5 V
-4
0.120 at VGS = - 2.5 V
- 4g
0.156 at VGS = - 1.8 V
- 3.8
6.2 nC
1206-8 Chip-FET ®
D1
S2
1
S1
D1
G1
D1
G2
Marking Code
S2
D2
EH
XXX
G2
Lot Traceability
and Date Code
Part # Code
D2
Bottom View
G1
Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
N-Channel
20
P-Channel
- 20
±8
4g
4g
- 4g
- 3.8
4b, c, g
4b, c, g
20
2.6
- 3.1b, c
- 2.5b, c
- 10
- 2.6
1.7b, c
3.1
2.0
- 1.7b, c
3.1
2.0
2.1b, c
1.3b, c
1.3b, c
0.8b, c
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
Unit
V
A
W
°C
260
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
RthJA
RthJF
Typ.
Max.
P-Channel
Typ.
Max.
Unit
t≤5s
50
60
77
95
Maximum Junction-to-Ambientb, f
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
30
40
33
40
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
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Si5515CDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
N-Ch
20
VGS = 0 V, ID = - 250 µA
P-Ch
- 20
ID = 250 µA
N-Ch
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
IDSS
ID(on)
RDS(on)
gfs
18
ID = - 250 µA
P-Ch
- 19
ID = 250 µA
N-Ch
- 2.7
2.5
mV/°C
ID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
0.4
0.8
VDS = VGS, ID = - 250 µA
P-Ch
- 0.4
- 0.8
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
V
N-Ch
100
P-Ch
- 100
N-Ch
1
VDS = - 20 V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
20
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
- 10
VGS = 4.5 V, ID = 6.0 A
N-Ch
0.030
0.036
VGS = - 4.5 V, ID = - 3.1 A
P-Ch
0.083
0.100
VGS = 2.5 V, ID = 5.6 A
N-Ch
0.034
0.041
VGS = - 2.5 V, ID = - 2.8 A
P-Ch
0.100
0.120
V
nA
µA
A
VGS = 1.8 V, ID = 5.1 A
N-Ch
0.040
0.050
VGS = - 1.8 V, ID = - 2.5 A
P-Ch
0.130
0.156
VDS = 10 V, ID = 6.0 A
N-Ch
22.4
VDS = - 10 V, ID = - 3.1 A
P-Ch
9.5
Ω
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Crss
Qg
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
632
P-Ch
455
N-Ch
80
P-Ch
70
N-Ch
40
pF
P-Ch
54
VDS = 10 V, VGS = 5 V, ID = 6.0 A
N-Ch
7.5
11.3
VDS = - 10 V, VGS = - 5 V, ID = - 3.1 A
P-Ch
7
11
N-Ch
6.5
9.8
P-Ch
6.2
9.3
N-Ch
1.1
P-Ch
0.85
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 6.0 A
N-Ch
0.9
P-Ch
1.75
Qgs
Gate-Drain Charge
Qgd
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.1 A
Gate Resistance
Rg
f = 1 MHz
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N-Ch
N-Ch
0.66
3.3
6.6
P-Ch
1.22
6.1
12.2
nC
Ω
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
Si5515CDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Typ.a
Max.
N-Ch
3.5
7
P-Ch
3
6
N-Ch
8
18
17
Test Conditions
Min.
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
P-Channel
VDD = - 10 V, RL = 4.2 Ω
ID ≅ - 2.4 A, VGEN = - 8 V, Rg = 1 Ω
N-Channel
VDD = 10 V, RL = 2.1 Ω
ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 1 Ω
tf
P-Channel
VDD = - 10 V, RL = 4.2 Ω
ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
N-Channel
VDD = 10 V, RL = 2.1 Ω
ID ≅ 4.8 A, VGEN = 8 V, Rg = 1 Ω
P-Ch
11
N-Ch
18
27
P-Ch
21
32
N-Ch
8
16
P-Ch
6
12
N-Ch
7
14
P-Ch
10
20
N-Ch
9
18
P-Ch
32
48
N-Ch
30
45
P-Ch
25
38
N-Ch
10
20
P-Ch
6
12
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
ISM
VSD
N-Ch
2.6
P-Ch
- 2.6
N-Ch
20
P-Ch
A
- 10
IS = 4.8 A, VGS = 0 V
N-Ch
0.8
1.2
IS = - 2.4 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
N-Ch
11
17
P-Ch
21
32
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 4.8 A, dI/dt = 100 A/µs, TJ = 25 °C
N-Ch
3
5
P-Ch
13
20
Reverse Recovery Fall Time
ta
P-Channel
IF = - 2.4 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
6
P-Ch
17
Reverse Recovery Rise Time
tb
N-Ch
5
P-Ch
4
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
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Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
4
VGS = 5 thru 2 V
3
VGS = 1.5 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
TC = 25 °C
2
1
4
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
1
2
3
4
5
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.075
1000
0.060
800
VGS = 1.8 V
0.045
VGS = 2.5 V
0.030
VGS = 4.5 V
600
400
200
0.000
0
4
8
12
16
1.5
Ciss
0.015
0
0.3
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0
0.0
20
Coss
Crss
0
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.8
5
VGS = 2.5 V, ID = 5.6 A
VDS = 10 V
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 6 A
4
3
VDS = 16 V
2
1.5
1.2
VGS = 4.5 V, ID = 6 A
0.9
1
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
100
ID = 6 A
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.05
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.04
0.03
TJ = 25 °C
0.02
0.01
0.00
0.1
0.0
0.3
0.6
0.9
0
1.2
2
VSD - Source-to-Drain Voltage (V)
4
6
8
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
40
0.7
30
Power (W)
VGS(th) (V)
0.6
ID = 250 µA
0.5
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
TJ - Temperature (°C)
10-1
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power
100
I D - Drain Current (A)
Limited by RDS(on)*
10
100 µs
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
100 ms
1s
10 s
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
www.vishay.com
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Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
I D - Drain Current (A)
8
6
Package Limited
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
Power (W)
Power (W)
Current Derating*
2.4
1.6
0.8
0.9
0.6
0.3
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Foot
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 68747
S-81545-Rev. A, 07-Jul-08
Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
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Si5515CDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
3.0
VGS = 5 thru 2 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
8
6
VGS = 1.5 V
4
2
1.8
TC = 25 °C
1.2
TC = 125 °C
0.6
VGS = 1 V
TC = - 55 °C
0
0
1
2
3
4
0.0
0.0
5
0.4
VDS - Drain-to-Source Voltage (V)
0.8
1.6
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
900
750
0.16
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.2
VGS = 2.5 V
0.12
VGS = 4.5 V
0.08
600
Ciss
450
300
Coss
0.04
150
Crss
0.00
0
0
2
4
6
8
10
0
4
8
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.5
5
ID = 3.1 A
VGS = - 2.5 V, ID = - 2.8 A
4
3
VDS = 16 V
2
1.3
(Normalized)
VDS = 10 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
1.1
VGS = - 4.5 V, ID = - 3.1 A
0.9
1
0
0
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1
2
3
4
5
6
7
8
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
Si5515CDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.18
100
ID = - 3.1 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.15
10
TJ = 25 °C
TJ = 150 °C
1
0.12
TJ = 125 °C
0.09
TJ = 25 °C
0.06
0.03
0.00
0.1
0.1
0.3
0.5
0.7
0.9
1.1
0
1.3
2
VSD - Source-to-Drain Voltage (V)
4
6
8
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40
0.8
0.7
30
Power (W)
VGS(th) (V)
0.6
ID = 250 µA
0.5
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
100
I D - Drain Current (A)
Limited by RDS(on)*
10
100 µs
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
100 ms
1 s, 10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
www.vishay.com
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Si5515CDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
I D - Drain Current (A)
5
4
Package Limited
3
2
1
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4.0
1.2
3.2
Power (W)
Power (W)
0.9
2.4
1.6
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Foot
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
Si5515CDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68747.
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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