ONSEMI MBRM110ET1

MBRM110E
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop–reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles, < 1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are ac/dc and dc–dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
10 VOLTS
ANODE
CATHODE
Features:
•
•
•
•
•
POWERMITE
CASE 457
PLASTIC
Low IR Extends Battery Life
Low Profile – Maximum Height of 1.1 mm
Small Footprint – Footprint Area of 8.45 mm2
150°C Operating Junction Temperature
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
MARKING DIAGRAM
Mechanical Characteristics:
•
•
•
•
•
M
1E1
Powermite is JEDEC Registered as D0–216AA
Case: Molded Epoxy
Epoxy Meets UL 94V–O at 1/8″
Weight: 62 mg (approximately)
Lead and Mounting Surface Temperature for Soldering Purposes.
260°C Maximum for 10 Seconds
1E1 = Device Code
M = Date Code
ORDERING INFORMATION
MAXIMUM RATINGS
Device
Please See the Table on the Following Page
Package
MBRM110ET1 POWERMITE
Shipping
3,000/Tape & Reel
MBRM110ET3 POWERMITE 12,000/Tape & Reel
 Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
1
Publication Order Number:
MBRM110E/D
MBRM110E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
10
V
Average Rectified Forward Current (TL = 100°C)
IO
1.0
A
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave,
single phase, 60 Hz)
IFSM
50
A
Storage Temperature
Tstg
–55 to +150
°C
Operating Junction Temperature
TJ
–55 to +150
°C
dv/dt
10,000
V/s
Rtjl
Rtjtab
Rtja
35
23
277
°C/W
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Anode) (Note 1)
Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
VF
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
IR
Maximum Instantaneous Reverse Current (Note 2)
(VR = 5.0 V)
(VR = 10 V)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
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2
TJ = 25°C
TJ = 100°C
0.455
0.530
0.595
0.360
0.455
0.540
TJ = 25°C
TJ = 100°C
0.5
1.0
300
500
V
A
10
TJ = 150°C
TJ = 25°C
TJ = 100°C
TJ = -40°C
1.0
0.1
0.4
0.2
0.6
0.8
TJ = 150°C
TJ = 100°C
1.0
0.1
TJ = 25°C
0.2
0.4
0.6
0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
I R, MAXIMUM REVERSE CURRENT (AMPS)
100E-3
10E-3
1E-3
TJ = 150°C
100E-6
1E-6
100E-9
2.5
5
TJ = 150°C
1E-3
TJ = 100°C
10E-6
TJ = 25°C
1E-6
100E-9
TJ = 25°C
0
10E-3
100E-6
TJ = 100°C
10E-6
10E-9
10
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E-3
IR, REVERSE CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRM110E
10
7.5
10E-9
0
2.5
5
7.5
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
10
FREQ = 20 kHz
dc
1.6
PFO , AVERAGE POWER DISSIPATION (WATTS)
1.8
1.4
SQUARE WAVE
1.2
1.0
Ipk/Io = 0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
25
45
65
85
105
125
145
0.7
0.6
Ipk/Io = 0.5
dc
SQUARE
WAVE
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
165
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1000
C, CAPACITANCE (pF)
I O , AVERAGE FORWARD CURRENT (AMPS)
MBRM110E
TJ = 25°C
100
10
0
1
2
3
4
5
6
7
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
8
9
10
1.6
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBRM110E
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
1.0%
0.001
0.00001
Rtjl(t) = Rtjl*r(t)
0.0001
0.001
0.01
0.1
1.0
10
100
T, TIME (s)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 8. Thermal Response Junction to Lead
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
Rtjl(t) = Rtjl*r(t)
1.0%
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
T, TIME (s)
Figure 9. Thermal Response Junction to Ambient
0.025
0.635
0.105
2.67
0.030
0.762
0.100
2.54
0.050
1.27
inches
mm
Minimum Recommended Footprint
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5
100
1,000
MBRM110E
PACKAGE DIMENSIONS
POWERMITE
PLASTIC PACKAGE
CASE 457–04
ISSUE D
F
0.08 (0.003)
C
–A–
J
M
T B
S
TERM. 1
–B–
K
TERM. 2
R
L
J
D
H
–T–
0.08 (0.003)
M
T B
S
C
S
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6
S
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
DIM
A
B
C
D
F
H
J
K
L
R
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
-0.05
+0.10 -0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
MBRM110E
Notes
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MBRM110E
POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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8
MBRM110E/D