ONSEMI MBRA210ET3

MBRA210ET3
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes. Typical applications are ac/dc and dc-dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical.
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Low IR, Extends Battery Life
1st in the Market Place with a 10 VR Schottky Rectifier
Compact Package with J-Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over-Voltage Protection
Optimized for Low Leakage Current
Mechanical Characteristics:
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Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8″
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Available in 12 mm Tape, 5000 Units per 13 inch Reel
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SCHOTTKY BARRIER
RECTIFIER
2 AMPERES
10 VOLTS
MARKING
DIAGRAM
B2E1
SMA
CASE 403D
PLASTIC
B2E1 = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRA210ET3
SMA
5000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
10
V
Average Rectified Forward Current
(At Rated VR, TC = 125°C)
IO
2.0
A
IFSM
100
A
Tstg, TC
-65 to
+150
°C
TJ
-65 to
+150
°C
dv/dt
10,000
V/s
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
 Semiconductor Components Industries, LLC, 2002
December, 2002 - Rev. 3
1
Publication Order Number:
MBRA210ET3/D
MBRA210ET3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction-to-Lead (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 1)
Symbol
Min Pad
1 Inch Pad
Unit
RθJL
RθJA
22
150
15
81
°C/W
VF
TJ = 25°C
TJ = 100°C
V
0.405
0.480
0.500
0.275
0.355
0.385
TJ = 25°C
TJ = 100°C
15
50
200
500
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current
IR
(VR = 10 V)
(VR = 5.0 V)
A
1. Mounted on a 3″ square FR4 PC Board with min. pads or 1″ square copper heat spreader.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
IF, MAXIMUM INSTANTANEOUS
FORWARD CURRENT (AMPS)
100
10
100°C
1
125°C
0.1
0.1
0.2
75°C
0.3
25°C
0.4
-40 °C
0.5
10
1
125°C
0.1
0.6
0.7
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2
100°C
0.3
25°C
0.4
0.5
0.6
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.00E-03
IR, REVERSE CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
100
125°C
100°C
1.00E-04
75°C
1.00E-05
1.00E-06
25°C
1.00E-07
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
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2
10
0.7
3.5
dc
IF, AVERAGE FORWARD
CURRENT (AMPS)
3.0
2.5
SQUARE WAVE
2.0
1.5
1.0
0.5
0
110
120
130
140
150
160
TL, LEAD TEMPERATURE (°C)
Figure 4. Current Derating - Junction to Lead
PFO, AVERAGE POWER DISSIPATION (WATTS)
MBRA210ET3
1.4
1.2
dc
1.0
0.8
SQUARE WAVE
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Forward Power Dissipation
C, CAPACITANCE (pF)
10,000
1000
100
0
2
4
6
8
10
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 6. Typical Capacitance
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 7. Thermal Response, Junction to Ambient (min pad)
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3
100
1000
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
MBRA210ET3
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.1
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 8. Thermal Response, Junction to Ambient (1 inch pad)
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4
100
1000
MBRA210ET3
PACKAGE DIMENSIONS
SMA
CASE 403D-02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS
403D−02.
S
A
D
DIM
A
B
C
D
H
J
K
S
B
POLARITY INDICATOR OPTIONAL
AS NEEDED
INCHES
MIN
MAX
0.160
0.180
0.090
0.115
0.075
0.095
0.050
0.064
0.002
0.006
0.006
0.016
0.030
0.060
0.190
0.220
C
K
J
H
0.157
4.0
0.0787
2.0
0.0787
2.0
SMA FOOTPRINT
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5
inches
mm
MILLIMETERS
MIN
MAX
4.06
4.57
2.29
2.92
1.91
2.41
1.27
1.63
0.05
0.15
0.15
0.41
0.76
1.52
4.83
5.59
MBRA210ET3
Notes
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6
MBRA210ET3
Notes
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7
MBRA210ET3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MBRA210ET3/D