MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. • • • • • • Low IR, Extends Battery Life 1st in the Market Place with a 10 VR Schottky Rectifier Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Optimized for Low Leakage Current Mechanical Characteristics: • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Available in 12 mm Tape, 5000 Units per 13 inch Reel http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2 AMPERES 10 VOLTS MARKING DIAGRAM B2E1 SMA CASE 403D PLASTIC B2E1 = Device Code ORDERING INFORMATION Device Package Shipping MBRA210ET3 SMA 5000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V Average Rectified Forward Current (At Rated VR, TC = 125°C) IO 2.0 A IFSM 100 A Tstg, TC -65 to +150 °C TJ -65 to +150 °C dv/dt 10,000 V/s Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Semiconductor Components Industries, LLC, 2002 December, 2002 - Rev. 3 1 Publication Order Number: MBRA210ET3/D MBRA210ET3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Ambient (Note 1) Symbol Min Pad 1 Inch Pad Unit RθJL RθJA 22 150 15 81 °C/W VF TJ = 25°C TJ = 100°C V 0.405 0.480 0.500 0.275 0.355 0.385 TJ = 25°C TJ = 100°C 15 50 200 500 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current IR (VR = 10 V) (VR = 5.0 V) A 1. Mounted on a 3″ square FR4 PC Board with min. pads or 1″ square copper heat spreader. 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 100°C 1 125°C 0.1 0.1 0.2 75°C 0.3 25°C 0.4 -40 °C 0.5 10 1 125°C 0.1 0.6 0.7 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.2 100°C 0.3 25°C 0.4 0.5 0.6 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.00E-03 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 125°C 100°C 1.00E-04 75°C 1.00E-05 1.00E-06 25°C 1.00E-07 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current http://onsemi.com 2 10 0.7 3.5 dc IF, AVERAGE FORWARD CURRENT (AMPS) 3.0 2.5 SQUARE WAVE 2.0 1.5 1.0 0.5 0 110 120 130 140 150 160 TL, LEAD TEMPERATURE (°C) Figure 4. Current Derating - Junction to Lead PFO, AVERAGE POWER DISSIPATION (WATTS) MBRA210ET3 1.4 1.2 dc 1.0 0.8 SQUARE WAVE 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Forward Power Dissipation C, CAPACITANCE (pF) 10,000 1000 100 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 6. Typical Capacitance 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 7. Thermal Response, Junction to Ambient (min pad) http://onsemi.com 3 100 1000 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) MBRA210ET3 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.1 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 8. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 4 100 1000 MBRA210ET3 PACKAGE DIMENSIONS SMA CASE 403D-02 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. S A D DIM A B C D H J K S B POLARITY INDICATOR OPTIONAL AS NEEDED INCHES MIN MAX 0.160 0.180 0.090 0.115 0.075 0.095 0.050 0.064 0.002 0.006 0.006 0.016 0.030 0.060 0.190 0.220 C K J H 0.157 4.0 0.0787 2.0 0.0787 2.0 SMA FOOTPRINT http://onsemi.com 5 inches mm MILLIMETERS MIN MAX 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.05 0.15 0.15 0.41 0.76 1.52 4.83 5.59 MBRA210ET3 Notes http://onsemi.com 6 MBRA210ET3 Notes http://onsemi.com 7 MBRA210ET3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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