NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device. NSM46211DW6T1G is housed in a SC-88/SOT-363 package which is ideal for low power surface mount applications in space constrained applications. Features http://onsemi.com (3) (2) R1 R2 Q1 Q2 (4) •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Q1: NPN •Q2: NPN BRT, R1 = R2 = 10 k (typical) •This is a Pb-Free Device (1) (5) (6) 6 1 SC-88/SOT-363 CASE 419B STYLE 1 Applications •Logic Switching •Amplification •Driver Circuits •Interface Circuits MARKING DIAGRAM 6 N5 M G G 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating - Q1 (NPN) Symbol Value Unit Collector‐Base Voltage V(BR)CBO 80 Vdc Collector‐Emitter Voltage V(BR)CEO 65 Vdc Emitter-Base Voltage V(BR)EBO 6.0 Vdc IC 100 mAdc Symbol Value Unit Collector‐Base Voltage VCBO 50 Vdc Collector‐Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current - Continuous Rating - Q2 (NPN BRT) Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 February, 2008 - Rev. 0 1 N5 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device NSM46211DW6T1G Package Shipping† SC-88 3000/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSM46211DW6/D NSM46211DW6T1G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Total Device Dissipation TA = 25°C Derate above 25°C Max Unit 180 (Note 1) 1.44 (Note 1) mW mW/°C RqJA 692 (Note 1) °C/W Symbol Max Unit 230 1.83 mW mW/°C PD Thermal Resistance, Junction‐to‐Ambient Characteristic (Both Junctions Heated) Total Device Dissipation, TA = 25°C Derate above 25°C PD Thermal Resistance, Junction‐to‐Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu. RqJA 544 °C/W TJ, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS - Q1 (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 65 - - V Collector-Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) V(BR)CES 80 - - V Collector-Base Breakdown Voltage (IC = 10 mA) V(BR)CBO 80 - - V Emitter-Base Breakdown Voltage (IE = 10 mA) V(BR)EBO 6.0 - - V ICBO - - 15 5.0 nA mA 200 150 290 450 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) - Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) - - 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) - 0.7 0.9 - V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 - 660 - 700 770 mV http://onsemi.com 2 NSM46211DW6T1G ELECTRICAL CHARACTERISTICS - Q2 (NPN BRT) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 0.5 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 - VCE(sat) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 - - Vdc Input Resistor R1 7.0 10 13 kW Resistor Ratio R1/R2 0.8 1.0 1.2 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 NSM46211DW6T1G PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE -E1 2 3 b 6 PL 0.2 (0.008) M E M A3 STYLE 1: PIN 1. 2. 3. 4. 5. 6. C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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