ONSEMI NSM46211DW6T1G

NSM46211DW6T1G
Dual NPN Transistors
General Purpose NPN Transistor and
NPN Transistor with Monolithic Bias
Network
NSM46211DW6T1G contains a single NPN transistor with a single
NPN bias resistor transistor with a monolithic bias network; a series
base resistor and a base-emitter resistor. This device is designed to
replace multiple transistors and resistors on customer boards by
integrating these components into a single device.
NSM46211DW6T1G is housed in a SC-88/SOT-363 package
which is ideal for low power surface mount applications in space
constrained applications.
Features
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(3)
(2)
R1
R2
Q1
Q2
(4)
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Q1: NPN
•Q2: NPN BRT, R1 = R2 = 10 k (typical)
•This is a Pb-Free Device
(1)
(5)
(6)
6
1
SC-88/SOT-363
CASE 419B
STYLE 1
Applications
•Logic Switching
•Amplification
•Driver Circuits
•Interface Circuits
MARKING DIAGRAM
6
N5 M G
G
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, - minus sign for Q1 (PNP) omitted)
Rating - Q1 (NPN)
Symbol
Value
Unit
Collector‐Base Voltage
V(BR)CBO
80
Vdc
Collector‐Emitter Voltage
V(BR)CEO
65
Vdc
Emitter-Base Voltage
V(BR)EBO
6.0
Vdc
IC
100
mAdc
Symbol
Value
Unit
Collector‐Base Voltage
VCBO
50
Vdc
Collector‐Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current - Continuous
Rating - Q2 (NPN BRT)
Collector Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 0
1
N5
= Device Code
M
= Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSM46211DW6T1G
Package
Shipping†
SC-88 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSM46211DW6/D
NSM46211DW6T1G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
Max
Unit
180 (Note 1)
1.44 (Note 1)
mW
mW/°C
RqJA
692 (Note 1)
°C/W
Symbol
Max
Unit
230
1.83
mW
mW/°C
PD
Thermal Resistance, Junction‐to‐Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation,
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction‐to‐Ambient
Junction and Storage Temperature
1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu.
RqJA
544
°C/W
TJ, Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS - Q1 (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
65
-
-
V
Collector-Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
V(BR)CES
80
-
-
V
Collector-Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
80
-
-
V
Emitter-Base Breakdown Voltage
(IE = 10 mA)
V(BR)EBO
6.0
-
-
V
ICBO
-
-
15
5.0
nA
mA
200
150
290
450
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
-
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
-
-
0.25
0.6
V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
-
0.7
0.9
-
V
Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
-
660
-
700
770
mV
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2
NSM46211DW6T1G
ELECTRICAL CHARACTERISTICS - Q2 (NPN BRT) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
-
-
100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
-
-
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
-
-
0.5
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 2)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
-
-
Vdc
hFE
35
60
-
VCE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
-
-
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
-
-
Vdc
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
NSM46211DW6T1G
PACKAGE DIMENSIONS
SC-88 (SOT-363)
CASE 419B-02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
-E1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NSM46211DW6/D