ONSEMI PZT751T1G_10

PZT751T1G
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT--223 package which is designed for medium power surface
mount applications.
Features
 High Current: 2.0 A
 The SOT--223 Package can be soldered using wave or reflow.
 SOT--223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
 NPN Complement is PZT651T1
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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SOT--223 PACKAGE
HIGH CURRENT
PNP SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2, 4
BASE
1
EMITTER 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector--Emitter Voltage
VCEO
60
Vdc
Collector--Base Voltage
VCBO
80
Vdc
Emitter--Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
2.0
Adc
Total Power Dissipation
@ TA = 25C (Note 1)
Derate above 25C
PD
Storage Temperature Range
Tstg
-- 65 to 150
C
Junction Temperature
TJ
150
C
Symbol
Value
Unit
RθJA
156
C/W
TL
260
C
10
Sec
0.8
6.4
Rating
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using minimum
recommended footprint.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 6
SOT--223
CASE 318E
STYLE 1
W
mW/C
THERMAL CHARACTERISTICS
Thermal Resistance from Junction--to-Ambient in Free Air
MARKING
DIAGRAM
1
AYW
ZT751G
G
1
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
PZT751T1G
Package
SOT--223
(Pb--Free)
Shipping
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
PZT751T1/D
PZT751T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Collector--Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
--
Vdc
Collector--Emitter Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
--
Vdc
Emitter--Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Base--Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
--
0.1
mAdc
Collector--Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
--
100
nAdc
75
75
75
40
-----
---
0.5
0.3
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
hFE
--
Collector--Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base--Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
--
1.0
Vdc
Base--Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
--
1.2
Vdc
fT
75
--
MHz
Current--Gain--Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width  300 ms, Duty Cycle = 2.0%.
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2
Vdc
PZT751T1G
NPN
300
270
210
180
25C
150
120
-- 55C
90
60
30
175
25C
150
125
100
-- 55C
75
50
25
0
10
20
50
0
--10 -- 20
100 200
500 1.0 A 2.0 A 4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 1. Typical DC Current Gain
--1.6
1.4
--1.4
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
--1.8
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE(on) @ VCE = 2.0 V
0.6
PNP
--2.0
1.8
1.0
-- 50 --100 -- 200 -- 500 --1.0 A --2.0 A --4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain
NPN
2.0
0.4
--1.2
VBE(sat) @ IC/IB = 10
--1.0
--0.8
VBE(on) @ VCE = 2.0 V
--0.6
--0.4
VCE(sat) @ IC/IB = 10
0.2
0
VCE = --2.0 V
200
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
240
TJ = 125C
225
VCE = 2.0 V
TJ = 125C
PNP
250
50
100
200
500
1.0 A
IC, COLLECTOR CURRENT (mA)
VCE(sat) @ IC/IB = 10
--0.2
2.0 A
0
4.0 A
--50
--100
--200
--500 --1.0 A
IC, COLLECTOR CURRENT (mA)
NPN
1.0
0.9
0.8
TJ = 25C
0.7
0.6
0.5
0.4
0.3
IC = 10 mA IC = 100 mA
IC = 500 mA
IC = 2.0 A
0.2
0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
--4.0 A
Figure 4. On Voltages
VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS)
Figure 3. On Voltages
--2.0 A
50 100 200 500
PNP
--1.0
--0.9
TJ = 25C
--0.8
--0.7
--0.6
--0.5
--0.4
IC = --500 mA
--0.3
--0.2
--0.1
IC = --10 mA
IC = --100 mA
0
--0.05 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20
IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region
IC = --2.0 A
--50 --100 --200 --500
Figure 6. Collector Saturation Region
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PZT751T1G
PACKAGE DIMENSIONS
SOT--223 (TO--261)
CASE 318E--04
ISSUE N
D
b1
4
HE
1
2
E
3
b
e1
e
0.08 (0003)
A1
C
θ
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
A
1.50
1.63
1.75
0.060
0.064
A1
0.02
0.06
0.10
0.001
0.002
b
0.60
0.75
0.89
0.024
0.030
b1
2.90
3.06
3.20
0.115
0.121
c
0.24
0.29
0.35
0.009
0.012
D
6.30
6.50
6.70
0.249
0.256
E
3.30
3.50
3.70
0.130
0.138
e
2.20
2.30
2.40
0.087
0.091
e1
0.85
0.94
1.05
0.033
0.037
L
0.20
----------0.008
-----L1
1.50
1.75
2.00
0.060
0.069
HE
6.70
7.00
7.30
0.264
0.276
0
10
0
--θ
STYLE 1:
PIN 1.
2.
3.
4.
L1
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
-----0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
PZT751T1/D