EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors http://onsemi.com NPN/PNP Dual (Complimentary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating • Low VCE(SAT), 0.5 V (3) (2) Q1 Q2 (4) MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 V Collector −Base Voltage VCBO −50 V Emitter −Base Voltage VEBO −6.0 V IC −100 mAdc Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Collector Current − Continuous (5) 6 Total Device Dissipation TA = 25°C Derate above 25°C Characteristic (Both Junctions Heated) Total Device Dissipation 3Z D Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient RJA Junction and Storage Temperature Range TJ, Tstg MARKING DIAGRAM mW/°C °C/W RJA 54 SOT−563 CASE 463A PLASTIC 350 (Note 1) Thermal Resistance, Junction-to-Ambient (6) 3 12 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) (1) 3Z = Specific Device Code D = Date Code mW/°C 250 (Note 1) °C/W −55 to +150 °C 1. FR−4 @ Minimum Pad. ORDERING INFORMATION Device Package Shipping† EMZ1DXV6T1 SOT−563 4 mm Pitch 4000/Tape & Reel EMZ1DXV6T5 SOT−563 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. P0 1 Publication Order Number: EMZ1DXV6/D EMZ1DXV6T1, EMZ1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 Adc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 Adc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) IEBO − − −0.5 A − − −0.5 120 − 560 − 140 − COB − 3.5 − pF Collector-Base Breakdown Voltage (IC = 50 Adc, IE = 0) V(BR)CBO 60 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 Adc, IE = 0) V(BR)EBO 7.0 − − Vdc Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO − − 0.5 A Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0) IEBO − − 0.5 A − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF Q1: PNP Collector−Emitter Saturation Voltage (Note 4) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Vdc hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) MHz Q2: NPN Voltage(2) Collector-Emitter Saturation (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) DC Current Gain(2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) Vdc − 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. 4. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. http://onsemi.com 2 EMZ1DXV6T1, EMZ1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − Q1, PNP 1000 120 VCE , COLLECTOR-EMITTER VOLTAGE (V) 300 A 250 200 60 150 IB = 50 A 0 3 6 12 9 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE Figure 2. DC Current Gain 2 900 TA = 25°C 800 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) Cob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = − 25°C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25°C TA = 75°C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) TA = 25°C 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 EMZ1DXV6T1, EMZ1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − Q2, NPN 1000 160 A TA = 25°C 50 140 A 120 A 40 100 A 30 80 A 20 60 A 10 IB = 20 A TA = − 25°C 100 40 A 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. IC − VCE 1.5 1 0.5 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 20 7 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 60 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 4 30 40 EMZ1DXV6T1, EMZ1DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE A A −X− 5 6 1 2 C K 4 B −Y− 3 D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G J K S S J 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDER FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For information on soldering specifications, please refer to our Soldering Reference Manual, SOLDERRM/D. http://onsemi.com 5 EMZ1DXV6T1, EMZ1DXV6T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. EMZ1DXV6T1/D