HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • (6) High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A − Machine Model: C Pb−Free Package is Available Q2 (1) Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc IC 200 mAdc Collector Current − Continuous (4) Q1 MAXIMUM RATINGS (TA = 25°C) Rating (5) 6 5 (2) 4 12 (3) SC−74 CASE 318F STYLE 3 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. R9 M THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Characteristic PD 380 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C R9 = Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† HN1B01FDW1T1 SC−74 3000/Tape & Reel HN1B01FDW1T1G SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 2 Publication Order Number: HN1B01FDW1T1/D HN1B01FDW1T1 Q1: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO −50 − Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO −60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO −7.0 − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − −0.1 Adc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − −0.1 −2.0 −1.0 Adc Adc mAdc DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE −200 −400 −0.15 −0.3 Vdc Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − 0.1 Adc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − 0.1 2.0 1.0 Adc Adc mAdc DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE 200 400 − VCE(sat) 0.15 0.25 Vdc Characteristic Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − Q2: NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. http://onsemi.com 2 HN1B01FDW1T1 Typical Electrical Characteristics: PNP Transistor 1000 −1.5 mA −2.0 mA −160 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) −200 −1.0 mA −120 −0.5 mA −80 IB = −0.2 mA −40 TA = 100°C 25°C TA = 25°C 0 VCE = −1.0 V 10 0 −1 −2 −3 −4 −5 −6 −1 VCE, COLLECTOR−EMITTER VOLTAGE (V) −25°C 100 VCE = −6.0 V −100 −1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C −10 IC/IB = 10 TA = 100°C 25°C −25°C −0.1 −0.01 −1 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC −10 −10,000 COMMON EMITTER VCE = 6 V −1 TA = 25°C IC/IB = 10 IB, BASE CURRENT (A) BASE−EMITTER SATURATION VOLTAGE (V) −1000 −1 IC, COLLECTOR CURRENT (mA) −0.1 −1 −100 Figure 2. DC Current Gain 1000 10 −1 −10 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region 25°C −25°C 100 −1000 25°C TA = 100°C −25°C −100 −10 −1 −0.1 −10 −100 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1000 IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V) Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage http://onsemi.com 3 −1 HN1B01FDW1T1 Typical Electrical Characteristics: NPN Transistor 1000 6.0 mA 5.0 mA 240 2.0 mA 3.0 mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 280 200 1.0 mA 160 120 0.5 mA 80 IB = 0.2 mA TA = 100°C 25°C −25°C 100 40 TA = 25°C 0 0 1 2 3 VCE = 1.0 V 10 4 5 6 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 VCE = 6.0 V VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 8. DC Current Gain 1000 1 1 IC/IB = 10 TA = 100°C 25°C 0.1 −25°C 0.01 10 100 1000 1 10 IC, COLLECTOR CURRENT (mA) 100 1000 IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC 10 10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (A) BASE−EMITTER SATURATION VOLTAGE (V) 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Voltage 10 100 1 TA = 25°C IC/IB = 10 0.1 TA = 100°C 25°C 1000 −25°C 100 10 1 0.1 1 10 100 1000 0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE, BASE−EMITTER VOLTAGE (V) Figure 11. VBE(sat) versus IC Figure 12. Base−Emitter Voltage http://onsemi.com 4 0.9 1 HN1B01FDW1T1 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. A L 6 5 4 2 3 B S 1 D DIM A B C D G H J K L M S G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0 10 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0 10 2.50 3.00 STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 HN1B01FDW1T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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