BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3.0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of many Devices 250 mAMPS 200 VOLTS RDS(on) = 8 Ω N–Channel D MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 200 Vdc Gate–Source Voltage VGS ±20 Vdc Drain Current Continuous (Note 1.) Pulsed (Note 2.) ID IDM 250 500 Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range G S mAdc PD TJ, Tstg 350 6.4 mW mW/°C –55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. TO–92 CASE 29 Style 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS108 YWW 1 Drain 3 Source 2 Gate Y WW = Year = Work Week ORDERING INFORMATION Device Package Shipping BS108 TO–92 1000 Units/Box BS108ZL1 TO–92 2000 Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 1 1 Publication Order Number: BS108/D BS108 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 200 – – – – 30 – – 10 0.5 – 1.5 – – – – 10 8.0 – – 25 – – 150 – – 30 – – 10 Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µA) V(BR)DSS Zero Gate Voltage Drain Current (VDSS = 130 Vdc, VGS = 0) Vdc IDSS Gate–Body Leakage Current (VGS = 15 Vdc, VDS = 0) nAdc IGSSF nAdc ON CHARACTERISTICS (2) Gate Threshold Voltage (ID = 1.0 mA, VDS = VGS) VGS(th) Static Drain–to–Source On–Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) rDS(on) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) Vdc Ohms A IDSX DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Crss pF pF pF SWITCHING CHARACTERISTICS Turn–On Time (See Figure 1) td(on) – – 15 ns Turn–Off Time (See Figure 1) td(off) – – 15 ns 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 Ω INPUT 23 PULSE GENERATOR 50 Vin 20 dB 50 Ω ATTENUATOR 40 pF 50 ton Vout toff 90% 90% OUTPUT V INVERTED out 1.0 M 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit http://onsemi.com 2 BS108 PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X–X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE http://onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BS108 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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