NSD914XV2T1 Preferred Device High−Speed Switching Diode • • • • High-Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD-523 Package http://onsemi.com 1 CATHODE MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 120 1.57 mW mW/°C RJA TBD °C/W TJ, Tstg 150 °C Rating Peak Forward Surge Current 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature SOD-523 CASE 502 PLASTIC PD MARKING DIAGRAM XXd 1. FR-4 @ Minimum Pad Characteristic Symbol Min Max Unit 5D = Specific Device Code d = Date Code OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) 100 - Vdc - 25 5.0 nAdc Adc 4.0 pF Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CT - Forward Recovery Voltage (IF = 10 mAdc) VFR - 1.0 Vdc trr - 4.0 ns Reverse Recovery Time (IF = IR = 10 mAdc) Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 0 ORDERING INFORMATION Device NSD914XV2T1 Package SOD-523 Shipping 4 mm pitch 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: NSD914XV2T1/D NSD914XV2T1 820 Ω +10 V 2.0 k IF 100 µH tp tr 0.1 µF IF t trr 10% t 0.1 µF 90% DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85°C I R , REVERSE CURRENT ( A) 10 TA = −40°C 10 TA = 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8.0 40 50 NSD914XV2T1 PACKAGE DIMENSIONS SOD-523 CASE 502-01 ISSUE O -XA -YNOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. B D 2 PL 0.08 (0.003) M T X Y DIM A B C D J K S C K J S -TSEATING PLANE http://onsemi.com 3 MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM 0.047 0.032 0.024 0.012 0.0055 0.008 0.063 MAX 0.051 0.035 0.028 0.014 0.0079 0.010 0.067 NSD914XV2T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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