NTES1P02 Product Preview Power MOSFET 50 mAmps, 20 Volts P–Channel SC–75 • • • • Low Threshold Voltage: Vth = 0.5 to 1.5 V High Speed Small Package Complementary to NTES1N02 http://onsemi.com 50 mAMPS 20 VOLTS RDS(on) = 15 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDS 20 Vdc VGSS 7 Vdc Drain Current – Continuous @ TA = 25°C ID 50 Total Power Dissipation @ TA = 25°C PD 100 mW Channel Temperature Tch 150 °C Operating and Storage Temperature Range Tstg – 55 to 150 °C Drain–to–Source Voltage Gate–to–Source Voltage – Continuous N–Channel 3 mAdc 1 2 MARKING DIAGRAM 3 SC–75/SOT–416 CASE 463 STYLE 1 2 P02 D 1 P02 D = Device Code = Date Code PIN ASSIGNMENT 3 Drain Gate 1 2 Source Top View ORDERING INFORMATION Device NTES1P02 Package SC–75 Shipping 3000 Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 0 1 Publication Order Number: NTES1P02/D NTES1P02 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 – – Vdc – – 1.0 – – 1.0 0.5 – 1.5 – 7.0 15 YFS 15 – – mS pF OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µA) Drain Cut–off Current (VDS = 20 Vdc, VGS = 0 Vdc) IDSS Gate–Body Leakage Current (VGS = 7.0 Vdc, VDS = 0) IGSS µAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 3.0 Vdc, ID = 0.1 mAdc) Vth Drain–to–Source On–Resistance (VGS = 2.5 Vdc, ID = 10 mAdc) RDS(on) Forward Transfer Admittance (VDS = 3.0 Vdc, ID = 10 mAdc) Vdc Ω DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 3.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss – 10.4 – Output Capacitance (VDS = 3.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss – 8.4 – Reverse Transfer Capacitance (VDS = 3.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss – 2.8 – (VDD = 3.0 Vdc, ID = 10 mAdc, VGS = 0 to 2.5 Vdc) ton – 0.15 – toff – 0.13 – SWITCHING CHARACTERISTICS Turn–On Delay Time Turn–Off Delay Time http://onsemi.com 2 µs NTES1P02 PACKAGE DIMENSIONS SC–75 (SC–90, SOT–416) CASE 463–01 ISSUE B –A– S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G –B– 1 M B K J 0.20 (0.008) A C L DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR H http://onsemi.com 3 INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC NTES1P02 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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