NTB65N02R, NTP65N02R Product Preview Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK http://onsemi.com Features • • • • • 65 A, 24 V RDS(on) = 8.3 m (TYP) Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Fast Switching D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit VDSS 24 Vdc Continuous VGS ±20 Vdc Drain Current (Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 s) ID IDM 65 160 A A Total Power Dissipation @ TA = 25°C PD 78 W Operating and Storage Temperature TJ and Tstg –55 to 150 °C Single Pulse Drain–to Source Avalanche Energy – Starting TJ=25°C (VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 ) EAS TBD mJ Thermal Resistance Junction–to–Case Junction–to–Ambient (Note 1) Junction–to–Ambient (Note 2) RJC RJA RJA 1.6 67 120 °C/W TL 260 °C Drain–to–Source Voltage Gate–to–Source Voltage Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 10 Seconds G S MARKING DIAGRAMS 1 1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 3. Chip current capability limited by package. 2 FUNCTION 1 Gate 2 Drain 3 Source 4 Drain 4 2 1 3 October, 2002 – Rev. 0 D2PAK CASE 418B Style 2 xxxxx Y WW xxxxx YWW = Specific Device Code = Year = Work Week ORDERING INFORMATION Device This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2002 xxxxx YWW 3 PIN ASSIGNMENT PIN TO–220AB CASE 221A Style 5 4 1 Package Shipping NTB65N02R D2PAK 50 Units/Rail NTB65N02RT4 D2PAK 800 Tape & Reel TO–220AB 50 Units/Rail NTP65N02R Publication Order Number: NTB65N02R/D NTB65N02R, NTP65N02R ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Min Typ Max Unit 24 – 27.5 25.5 – – – – – – 1.5 15 – – ±100 1.0 – 1.5 –4.1 2.0 – – – – 10.5 8.3 9.5 12.5 10.5 – – 20 – Ciss – 1050 1470 Coss – 394 550 Crss – 88 120 td(on) – 11.2 20 tr – 52 100 td(off) – 10 20 tf – 4 10 QT – 8.4 12 Q1 – 3.7 – Q2 – 4.04 – VSD – – – 0.88 1.10 0 80 0.80 1.2 – – Vdc trr – 15.5 – ns ta – 12.6 – tb – 2.6 – QRR – 0.005 – OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(br)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 4) (VGS = 4.5 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 30 Adc) RDS(on) Forward Transconductance (Note 4) (VDS = 10 Vdc, ID = 15 Adc) Vdc mV/°C m gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance ((VDS = 24 Vdc, VGS = 0 V f = 1 MHz)) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 5) Turn–On Delay Time Rise Time Turn–Off Delay Time (VGS = 5 Vdc, VDD = 10 Vdc, ID = 30 Adc, RG = 3) Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 30 Adc, VDS = 10 Vdc) (Note 4) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On On–Voltage Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 4) ((IS = 30 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 4) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTB65N02R, NTP65N02R PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN D2PAK CASE 418B–04 ISSUE G C E V W –B– 4 A 1 2 S 3 –T– SEATING PLANE K W J G D H 3 PL 0.13 (0.005) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 3 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB65N02R, NTP65N02R ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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