DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS(on)max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance Low Input/Output Leakage ESD Protected Gate up to 2kV Lead Free by Design, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • DC-DC Converters Power management functions Notebook PC Applications Portable Equipment Applications Case: U-DFN2523-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) • • Drain U-DFN2523-6 Pin 1 Gate Pin 1, 2 = Source Pin 3 = Gate Pin 4, 5, 6 = Drain ESD PROTECTED TO 2kV Gate Protection Diode Source Equivalent Circuit Bottom View Ordering Information (Note 3) Part Number DMP2018LFK-7 DMP2018LFK-13 Notes: Case U-DFN2523-6 U-DFN2523-6 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information P8 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2018LFK Document number: DS35357 Rev. 5 - 2 Mar 3 YM ADVANCE INFORMATION NEW PRODUCT Product Summary P8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 2015 C Jul 7 1 of 7 www.diodes.com Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated DMP2018LFK ADVANCE INFORMATION NEW PRODUCT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State t<5s Continuous Drain Current (Note 5) VGS = -2.0V Steady State t<5s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 6) Repetitive Avalanche Energy (Note 6) ID Value -20 ±12 -9.2 -7.3 ID -12.8 -10.3 A ID -7.1 -6 A ID IS IDM IAS EAS -10 -8.3 -3 -90 17 72 Units V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol TA = 25°C TA = 70°C Steady State t<5s TA = 25°C TA = 70°C Steady State t<5s PD RθJA PD RθJA RθJC TJ, TSTG Value 1 0.63 126 60 2.1 1.3 61 29 6.4 -55 to 150 Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate DMP2018LFK Document number: DS35357 Rev. 5 - 2 2 of 7 www.diodes.com Units W °C/W W °C/W °C March 2012 © Diodes Incorporated DMP2018LFK Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1 ±2 V μA μA VGS = 0V, ID = -10mA VDS = -20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 10 12 13.6 20 17 0.7 -1.2 16 20 25 1.2 V Static Drain-Source On-Resistance -0.45 10 - VDS = -10V, ID = -200μA VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.6A VGS = -2.0V, ID = -1.8A VGS = -1.5V, ID = -1A VDS = -10V, ID = -3.6A VGS = 0V, IS = -3.6A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 4748 833 339 6.2 113 53 7.1 8.5 22.8 29.8 240.8 100.6 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS = -10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -16V, ID = -7.2A ns VDD = -10V, VGS = -4.5V, RG = 4.7Ω, ID = -3.6A 6. UIS in production with L = 0.5mH, TJ = 25°C 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 30 30 VGS = -10V VGS = -4.5V 25 25 VGS = -2.5V VGS = -2.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise stated 20 VGS = -1.5V 15 10 VDS = -5V 20 15 10 TA = 150°C TA = 125°C TA = 85°C 5 5 T A = 25°C TA = -55°C 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMP2018LFK Document number: DS35357 Rev. 5 - 2 2 0 0 3 of 7 www.diodes.com 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 March 2012 © Diodes Incorporated VGS = -2.5V 0.01 VGS = -10V 0 0 VGS = -4.5V 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -5V ID = -5A VGS = -10V ID = -10A 1.1 0.9 0.7 0.5 -50 VGS = -4.5V 0.02 TA = 150°C T A = 125°C TA = 85°C TA = -55°C 0 VGS = -5V ID = -5A 0.012 0.010 VGS = -10V ID = -10A 0.008 0.006 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 30 0.8 ID = -250µA ID = -1mA 0.2 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -IS, SOURCE CURRENT (A) 25 1.0 Document number: DS35357 Rev. 5 - 2 30 0.014 1.2 DMP2018LFK 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.016 1.4 0 -50 -25 5 0.018 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0.4 0 0.020 -25 0.6 TA = 25°C 0.01 30 1.5 1.3 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.03 1.7 -VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMP2018LFK TA = 25°C 20 15 10 5 0 0.2 4 of 7 www.diodes.com 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 March 2012 © Diodes Incorporated DMP2018LFK 10,000 100,000 -IDSS, LEAKAGE CURRENT (nA) f = 1MHz C, CAPACITANCE (pF) 1,000 Coss Crss 100 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance T A = 150°C 10,000 TA = 125°C 1,000 TA = 85°C 100 10 1 20 100 10 T A = 25°C 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 RDS(on) Limited 8 ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) VDS = -16V ID = -7.2A 6 4 10 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 PW = 10µs 2 TJ(max) = 150°C TA = 25°C Single Pulse 0 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 0.01 0.1 120 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT Ciss D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 61°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMP2018LFK Document number: DS35357 Rev. 5 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 March 2012 © Diodes Incorporated DMP2018LFK ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions A A3 U-DFN2523-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.152 − − b 0.25 0.35 0.30 D 2.45 2.55 2.50 D1 1.55 1.65 1.60 e 0.65 − − E 2.25 2.35 2.30 E1 1.18 1.28 1.23 L 0.30 0.40 0.35 L1 0.30 0.40 0.35 All Dimensions in mm A1 D e L (3x) Pin #1 ID R0.150 E E1 D1 L1 (2x) b (6x) Suggested Pad Layout X1 Y1 Y2 Y3 Dimensions Value (in mm) C 0.650 X 0.400 X1 1.700 Y 0.650 Y1 0.450 Y2 1.830 Y3 2.700 Y C DMP2018LFK Document number: DS35357 Rev. 5 - 2 X 6 of 7 www.diodes.com March 2012 © Diodes Incorporated DMP2018LFK ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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