INTERSIL HGTG20N60B3D

HGTG20N60B3D
Data Sheet
January 2000
File Number
3739.6
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25oC and
150oC. The diode used in anti-parallel with the IGBT is the
RHRP3060.
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• 40A, 600V at TC = 25oC
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
E
C
G
Formerly developmental type TA49016.
Ordering Information
PART NUMBER
PACKAGE
HGTG20N60B3D
TO-247
BRAND
G20N60B3D
COLLECTOR
(BOTTOM SIDE METAL)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
1
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGTG20N60B3D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG20N60B3D
UNITS
600
600
40
20
20
160
±20
±30
30A at 600V
165
1.32
-40 to 150
260
4
10
V
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
SYMBOL
BVCES
ICES
Collector to Emitter Saturation Voltage
VCE(SAT)
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
VGE(TH)
IGES
SSOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
VGEP
QG(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
Thermal Resistance
RθJC
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110 ,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TC = 150oC
VCE = 480V
VGE = 15V,
VCE = 600V
RG = 10Ω,
L = 45µH
IC = IC110 , VCE = 0.5 BVCES
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES
VGE = 20V
TC = 150oC,
ICE = IC110
VCE = 0.8 BVCES,
VGE = 15V
RG = 10Ω,
L = 100µH
IEC = 20A
IEC = 20A, dIEC/dt = 100A/µs
IEC = 1A, dIEC/dt = 100A/µs
IGBT
Diode
MIN
600
3.0
100
30
TYP
1.8
2.1
5.0
-
MAX
250
2.0
2.0
2.5
6.0
±100
-
UNITS
V
µA
mA
V
V
V
nA
A
A
-
8.0
80
105
105
135
V
nC
nC
-
25
20
220
140
475
1050
1.5
-
275
175
1.9
55
45
0.76
1.2
ns
ns
ns
ns
µJ
µJ
V
ns
ns
oC/W
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
2
HGTG20N60B3D
ICE , COLLECTOR TO EMITTER CURRENT (A)
100
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
80
TC = 150oC
60
TC = 25oC
40
-40ooC
C
TTC
C == -40
20
0
4
6
8
10
12
VGE = 9V
60
VGE = 8.5V
40
VGE = 8.0V
20
VGE = 7.5V
VGE = 7.0V
0
0
2
VGE = 15V
30
20
10
0
125
150
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
40
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
CIES
3000
2000
COES
1000
CRES
0
15
20
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
3
25
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
FREQUENCY = 1MHz
10
TC = 25oC
80
60
TC = -40oC
40
TC = 150oC
20
0
0
1
2
3
4
5
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5000
5
10
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
0
8
100
TC , CASE TEMPERATURE (oC)
4000
6
FIGURE 2. SATURATION CHARACTERISTICS
50
75
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
50
VGE = 10V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, TC = 25oC
80
VGE , GATE TO EMITTER VOLTAGE (V)
25
12V
VGE = 15V
600
15
480
12
VCE = 600V
9
360
VCE = 400V
240
6
VCE = 200V
TC = 25oC
Ig(REF) = 1.685mA
120
RL = 30Ω
0
0
20
40
60
QG , GATE CHARGE (nC)
80
FIGURE 6. GATE CHARGE WAVEFORMS
3
0
100
VGE , GATE TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTG20N60B3D
Typical Performance Curves
500
TJ = 150oC, RG = 10Ω, L = 100µH
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
100
(Continued)
50
40
30
VCE = 480V, VGE = 15V
20
10
300
VCE = 480V, VGE = 15V
200
100
0
10
20
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
100
0
40
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
1000
TJ = 150oC, RG = 10Ω, L = 100µH
TJ = 150oC, RG = 10Ω, L = 100µH
VCE = 480V, VGE = 15V
10
1
VCE = 480V, VGE = 15V
100
10
0
10
20
30
0
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
1400
20
30
40
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
2500
EOFF, TURN-OFF ENERGY LOSS (µJ)
TJ = 150oC, RG = 10Ω, L = 100µH
1200
1000
800
VCE = 480V, VGE = 15V
600
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
EON , TURN-ON ENERGY LOSS (µJ)
10
20
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
tfI , FALL TIME (ns)
trI , TURN-ON RISE TIME (ns)
TJ = 150oC, RG = 10Ω, L = 100µH
400
400
200
0
TJ = 150oC, RG = 10Ω, L = 100µH
2000
1500
VCE = 480V, VGE = 15V
1000
500
0
0
10
20
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
40
0
10
20
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG20N60B3D
fMAX , OPERATING FREQUENCY (kHz)
500
(Continued)
TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10Ω, L = 100mH
VCE = 480V
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON +EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
10
5
10
20
30
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
120
TC = 150oC, VGE = 15V, RG = 10Ω
100
80
60
40
20
0
0
100
ICE , COLLECTOR TO EMITTER CURRENT (A)
400
500
600
700
FIGURE 14. SWITCHING SAFE OPERATING AREA
0.5
0.2
RESPONSE
ZθJC , NORMALIZED THERMAL
300
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
100
200
10-1
0.1
0.05
t1
0.02
PD
0.01
10-2
t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-5
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
50
80
tr, RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
100
150oC
60
100oC
40
25oC
20
0
0
0.5
1.0
1.5
2.0
VEC , FORWARD VOLTAGE (V)
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
5
2.5
TC = 25oC, dIEC/dt = 100A/µs
trr
40
30
ta
20
tb
10
0
1
5
10
IEC , FORWARD CURRENT (A)
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
20
HGTG20N60B3D
Test Circuit and Waveform
90%
L = 100µH
RHRP3060
10%
VGE
EOFF
RG = 10Ω
EON
VCE
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
trI
tfI
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
td(ON)I
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and discharge procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions are taken:
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM . Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for EOFF ; i.e. the
collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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6
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