HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR GATE • Fast Switching Speeds COLLECTOR (FLANGE) • High Input Impedance Applications HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA • Power Supplies • Motor Drives COLLECTOR (FLANGE) GATE • Protective Circuits EMITTER Description The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTD6N40E1 TO-251AA G6N40E HGTD6N50E1 TO-251AA G6N50E HGTD6N40E1S TO-252AA G6N40E HGTD6N50E1S TO-252AA G6N50E G E NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG HGTD6N40E1 HGTD6N40E1S 400 400 ±20 7.5 6.0 60 0.48 -55 to +150 HGTD6N50E1 HGTD6N50E1S 500 500 ±20 7.5 6.0 60 0.48 -55 to +150 UNITS V V V A A W W/oC oC INTERSIL CORPORATION’S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 1970 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2413.4 Specifications HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTD6N40E1 HGTD6N40E1S PARAMETERS SYMBOL MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V - 250 - - µA Zero Gate Voltage Collector Current ICES Gate-Emitter Leakage Current IGES Collector-Emitter On-Voltage VCE(ON) Gate-Emitter Plateau Voltage TEST CONDITIONS HGTD6N50E1 HGTD6N50E1S TJ = +150oC, VCE = 400V TJ = +150oC, VCE = 500V - - - 250 µA VGE = ±20V, VCE = 0V - 100 - 100 nA TJ = +150oC, IC = 3A, VGE = 10V - 2.9 - 2.9 V - 2.5 - 2.5 V TJ = +150oC, TJ = +25oC, IC = 3A, VGE = 10V - 2.5 - 2.5 V TJ = +25oC, IC = 3A, VGE = 15V - 2.4 - 2.4 V IC = 3A, VGE = 15V VGEP IC = 3A, VCE = 10V 6.5 (Typ) V On-State Gate Charge QG(ON) IC = 3A, VCE = 10V 6.9 (Typ) nC Turn-On Delay Time tD(ON) Resistive Load, IC = 3A, VCE = 400V, RL = 133Ω, TJ = +150oC, VGE = 10V, RG = 25Ω 90 (Typ) ns 32 (Typ) ns 24 (Typ) ns tF 1100 (Typ) ns WOFF 0.29 (Typ) mJ Rise Time tR Turn-Off Delay Time tD(OFF) Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Turn-Off Delay Time tD(OFF)I Fall Time tFI Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF Thermal Resistance Junction-toCase (IGBT) RθJC Inductive Load (See Figure 11), IC = 3A, VCE(CLP) = 400V, RL = 133Ω, L = 50µH, TJ = +150oC, VGE = 10V, RG = 25Ω - 190 - 190 ns - 1 - 1 µs - 0.43 - 0.43 mJ - 2.08 - 2.08 oC/W 7.5 7.5 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves PULSE TEST, VCE = 10V PULSE DURATION = 250µs DUTY CYCLE < 2% 6.0 4.5 3.0 TC = 1.5 +150oC TC = +25oC TC = -55oC 0.0 VGE = 15V 6.0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = +25oC VGE = 10V VGE = 7.5V VGE = 7.0V 4.5 VGE = 6.5V 3.0 VGE = 6.0V VGE = 5.5V 1.5 VGE = 5.0V 0.0 0 2 4 6 8 10 0 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 1971 10 HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Typical Performance Curves (Continued) 12 5 ICE, DC COLLECTOR CURRENT (A) VCE(ON), SATURATION VOLTAGE (V) TJ = +150oC VGE = 10V 4 3 VGE = 15V 2 1 VGE = 15V 8 6 VGE = 10V 4 2 0 +25 0 1 10 10 +50 FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) +100 +125 +150 FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0.3 500 TJ +150oC, VGE = 15V, RG = 50Ω, tD(OFF)I , TURN-OFF DELAY (µs) f = 1MHz C, CAPACITANCE (pF) +75 TC, CASE TEMPERATURE (oC) ICE, COLLECTOR-EMITTER CURRENT (A) 400 300 CISS 200 COSS 100 VCE = 400V, L = 50µH 0.2 0.1 CRSS 0.0 0 0 5 10 15 20 25 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL) FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 10 WOFF , TURN-OFF SWITCHING LOSS (mJ) 1.5 TJ = +150oC, VGE = 10V RG = 25Ω, L = 50µH tFI , FALL TIME (µs) 10 ICE, COLLECTOR-EMITTER CURRENT (A) 1.0 VCE = 400V 0.5 0.0 TJ = +150oC, VGE = 10V RG = 25Ω, L = 50µH VCE = 400V 1.0 VCE = 200V 0.1 1 10 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 1972 FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL) HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S TJ = +150oC, TC = +100oC, VGE = 10V RG = 25Ω, PT = 60W, L = 50µH 100 VCE = 200V VCE = 400V 10 fMAX = (PD - PC)/WOFF PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION 500 375 250 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES 125 COLLECTOR-EMITTER VOLTAGE 0 0 20 10 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) 10 5 0.75 BVCES 0.75 BVCES 1 1 RL = 166.7Ω IG(REF) = 0.18mA VGE = 10V VCC = BVCES GATEEMITTER VOLTAGE VCC = BVCES VGE, GATE-EMITTER VOLTAGE (V) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) fOP , MAXIMUM OPERATING FREQUENCY (kHz) Typical Performance Curves (Continued) IG(REF) TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT Test Circuit RL L = 50µH 1/RG = 1/RGEN + 1/RGE VCC 400V RGEN = 50Ω + - 20V 0V RGE = 50Ω FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 1973 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029