BSP52T1G, BSP52T3G NPN Small-Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • The SOT-223 Package can be soldered using wave or reflow. The • • • formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BSP52T1 to Order the 7 Inch/1000 Unit Reel PNP Complement is BSP62T1 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Max Unit Collector-Emitter Voltage VCES 80 Vdc Collector-Base Voltage VCBO 90 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 1.0 Adc Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 0.8 6.4 W mW/°C Total Power Dissipation (Note 2) @ TA = 25°C Derate above 25°C PD 1.25 10 W mW/°C TJ, Tstg −65 to 150 °C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance (Note 1) Junction-to-Ambient Characteristic RqJA 156 °C/W Thermal Resistance (Note 2) Junction-to-Ambient RqJA 100 °C/W TL 260 10 °C Sec Maximum Temperature for Soldering Purposes Time in Solder Bath Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. 2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 6 1 EMITTER 3 4 1 2 MARKING DIAGRAM AYW AS3G G 3 SOT−223 CASE 318E STYLE 1 A = Assembly Location Y = Year W = Work Week AS3 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† BSP52T1G SOT−223 (Pb−Free) 1000/Tape & Reel BSP52T3G SOT−223 (Pb−Free) 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BSP52T1/D BSP52T1G, BSP52T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max 90 − 5.0 − − 10 − 10 1000 2000 − − − 1.3 − 1.9 Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) ICES Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 − Vdc Vdc BSP52T1G, BSP52T3G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM A 1.50 1.63 1.75 0.060 0.064 A1 0.02 0.06 0.10 0.001 0.002 b 0.60 0.75 0.89 0.024 0.030 b1 2.90 3.06 3.20 0.115 0.121 c 0.24 0.29 0.35 0.009 0.012 D 6.30 6.50 6.70 0.249 0.256 E 3.30 3.50 3.70 0.130 0.138 e 2.20 2.30 2.40 0.087 0.091 e1 0.85 0.94 1.05 0.033 0.037 L 0.20 −−− −−− 0.008 −−− L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0° 10° 0° − − q STYLE 1: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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