PZT651 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. http://onsemi.com SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT Features 4 • High Current • The SOT−223 Package can be Soldered Using Wave or Reflow • Available in 12 mm Tape and Reel • • • 1 2 3 SOT−223 CASE 318E−04 STYLE 1 Use PZT651T1 to Order the 7 inch/1000 Unit Reel Use PZT651T3 to Order the 13 inch/4000 Unit Reel PNP Complement is PZT751T1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* ♦ ♦ COLLECTOR 2, 4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage Rating VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD Storage Temperature Range Junction Temperature W 0.8 6.4 mW/°C Tstg −65 to 150 °C TJ 150 °C Symbol Max Unit RqJA 156 °C/W TL 260 °C 10 Sec THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction−to−Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath MARKING DIAGRAM AYW 651 G G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum recommended footprint. Package Shipping† PZT651T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SPZT651T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 8 1 Publication Order Number: PZT651T1/D PZT651 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Max 60 − 80 − 5.0 − − 0.1 − 100 75 75 75 40 − − − − − − 0.5 0.3 − 1.0 − 1.2 75 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base−Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Collector−Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE Collector−Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) Current−Gain — Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0% http://onsemi.com 2 − Vdc Vdc Vdc MHz PZT651 NPN PNP 300 250 270 TJ = 125°C 210 180 25°C 150 120 -55°C 90 175 125 100 30 25 50 -55°C 75 50 20 25°C 150 60 0 10 VCE = -2.0 V 200 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 240 TJ = 125°C 225 VCE = 2.0 V 0 -10 -20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. Typical DC Current Gain -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) Figure 2. Typical DC Current Gain PNP -2.0 1.8 -1.8 1.6 -1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) NPN 2.0 1.4 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 0.4 -1.4 -1.2 VBE(sat) @ IC/IB = 10 -1.0 -0.8 VBE(on) @ VCE = 2.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 0.2 VCE(sat) @ IC/IB = 10 -0.2 0 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A -50 -100 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) NPN 1.0 0.9 0.8 TJ = 25°C 0.7 0.6 0.5 0.4 0.3 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) -4.0 A Figure 4. On Voltages VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. On Voltages -2.0 A 50 100 200 500 PNP -1.0 -0.9 TJ = 25°C -0.8 -0.7 -0.6 -0.5 -0.4 IC = -500 mA -0.3 IC = -2.0 A -0.2 -0.1 IC = -10 mA IC = -100 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) Figure 5. Collector Saturation Region -50 -100-200 -500 Figure 6. Collector Saturation Region http://onsemi.com 3 PZT651 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM 0.064 A 1.50 1.63 1.75 0.060 0.002 A1 0.02 0.06 0.10 0.001 0.030 b 0.60 0.75 0.89 0.024 0.121 b1 2.90 3.06 3.20 0.115 0.012 c 0.24 0.29 0.35 0.009 0.256 D 6.30 6.50 6.70 0.249 0.138 E 3.30 3.50 3.70 0.130 0.091 e 2.20 2.30 2.40 0.087 e1 0.037 0.85 0.94 1.05 0.033 L 0.20 −−− −−− 0.008 −−− L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0° 10° 0° − − q STYLE 1: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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