BUH150G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH150G has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load. Features http://onsemi.com POWER TRANSISTOR 15 AMPERES 700 VOLTS, 150 WATTS • Improved Efficiency Due to the Low Base Drive Requirements: • • • High and Flat DC Current Gain hFE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 400 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 10 Vdc TO−220AB CASE 221A−09 STYLE 1 1 2 3 Collector Current − Continuous − Peak (Note 1) IC ICM 15 25 Adc Base Current − Continuous − Peak (Note 1) IB IBM 6 12 Adc PD 150 1.2 W W/_C BUH150G TJ, Tstg −65 to 150 _C AY WW Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.85 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 5 1 BUH150 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping BUH150G TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: BUH150/D BUH150G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 460 Vdc Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.3 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C ICES 100 1000 mAdc Collector Base Current (VCB = Rated VCBO, VEB = 0) @ TC = 25°C @ TC = 125°C ICBO 100 1000 mAdc IEBO 100 mAdc Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25°C @ TC = 125°C VBE(sat) 1 1.25 Vdc VCE(sat) 0.16 0.15 0.4 0.4 Vdc (IC = 10 Adc, IB = 2 Adc) @ TC = 25°C 0.45 1 Vdc (IC = 20 Adc, IB = 4 Adc) @ TC = 25°C 2 5 Vdc DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C hFE 4 2.5 7 4.5 − (IC = 10 Adc, VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 8 6 12 10 − (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 12 14 20 22 − (IC = 100 mAdc, VCE = 5 Vdc) @ TC = 25°C 10 20 − DYNAMIC SATURATION VOLTAGE VCE(dsat) IC = 5 Adc, IB1 = 1 Adc VCC = 300 V @ TC = 25°C 1.5 V @ TC = 125°C 2.8 V IC = 10 Adc, IB1 = 2 Adc VCC = 300 V @ TC = 25°C 2.4 V @ TC = 125°C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Cib 1300 1750 pF Dynamic Saturation Voltage: Determined 3 ms after rising IB1 reaches 90% of final IB1 (see Figure 19) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) http://onsemi.com 2 BUH150G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms) Turn−on Time Storage Time Fall Time IC = 2 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc @ TC = 25°C ton 200 300 ns @ TC = 25°C ts 5.3 6.5 ms @ TC = 25°C tf 240 350 ns Turn−off Time @ TC = 25°C toff 5.6 7 ms Turn−on Time @ TC = 25°C ton 100 200 ns @ TC = 25°C ts 6.1 7.5 ms @ TC = 25°C tf 320 500 ns @ TC = 25°C toff 6.5 8 ms @ TC = 25°C @ TC = 125°C ton 450 800 650 ns @ TC = 25°C @ TC = 125°C toff 2.5 3.9 3 ms @ TC = 25°C @ TC = 125°C ton 500 900 700 ns @ TC = 25°C @ TC = 125°C toff 2.25 2.75 2.75 ms Storage Time Fall Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc Turn−off Time Turn−on Time Turn−off Time Turn−on Time Turn−off Time IC = 5 Adc, IB1 = 0.5 Adc IB2 = 0.5 Adc VCC = 300 Vdc IC = 10 Adc, IB1 = 2 Adc IB2 = 2 Adc VCC = 300 Vdc SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time @ TC = 25°C @ TC = 125°C tfi 110 160 250 ns @ TC = 25°C @ TC = 125°C tsi 6.5 8 8 ms Crossover Time @ TC = 25°C @ TC = 125°C tc 235 240 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 170 250 ns @ TC = 25°C @ TC = 125°C tsi 6 7.8 7.5 ms Crossover Time @ TC = 25°C @ TC = 125°C tc 250 270 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 140 150 ns @ TC = 25°C @ TC = 125°C tsi 3.25 4.6 3.75 ms Crossover Time @ TC = 25°C @ TC = 125°C tc 275 450 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 160 175 ns @ TC = 25°C @ TC = 125°C tsi 2.3 2.8 2.75 ms @ TC = 25°C @ TC = 125°C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 5 Adc IB1 = 0.5 Adc IB2 = 0.5 Adc IC = 10 Adc IB1 = 2 Adc IB2 = 2 Adc http://onsemi.com 3 BUH150G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V TJ = 125°C TJ = -20°C 10 1 0.001 0.01 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V TJ = 25°C TJ = -20°C 10 1 0.001 100 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C Figure 1. DC Current Gain @ 1 Volt 100 10 VCE = 5 V IC/IB = 5 TJ = 125°C TJ = 125°C TJ = -20°C 10 1 0.01 VCE , VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 0.1 1 10 0.01 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volt 100 TJ = 25°C 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 TJ = 25°C TJ = -20°C 0.1 0.01 0.001 100 Figure 3. DC Current Gain @ 5 Volt 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. Collector−Emitter Saturation Voltage 10 1.5 IC/IB = 5 VBE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) TJ = 25°C 1 TJ = 125°C 0.1 1 TJ = -20°C 0.5 TJ = 25°C TJ = 125°C TJ = 25°C 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 0 0.001 100 Figure 5. Collector−Emitter Saturation Voltage 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base−Emitter Saturation Region http://onsemi.com 4 100 BUH150G TYPICAL STATIC CHARACTERISTICS 1.5 2 TJ = 25°C VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 10 1 TJ = -20°C TJ = 25°C 0.5 TJ = 125°C 1.5 1 20 A 15 A VCE(sat) (IC = 1 A) 0.5 5A 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 0 0.01 100 Figure 7. Base−Emitter Saturation Region 1 IB, BASE CURRENT (A) 10 100 Figure 8. Collector Saturation Region 10000 900 Cib (pF) TJ = 25°C TJ = 25°C f(test) = 1 MHz 1000 Cob (pF) 100 BVCER @ 10 mA 800 BVCER (VOLTS) C, CAPACITANCE (pF) 0.1 8A 10 A 700 BVCER(sus) @ 200 mA 600 500 400 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 Figure 9. Capacitance 100 RBE (W) Figure 10. Resistive Breakdown http://onsemi.com 5 1000 BUH150G TYPICAL SWITCHING CHARACTERISTICS 12 2000 1800 IB1 = IB2 VCC = 300 V PW = 40 ms 1600 IC/IB = 10 10 25°C 8 125°C 1200 1000 t, TIME (s) μ t, TIME (ns) 1400 125°C 800 TJ = 25°C TJ = 125°C IC/IB = 5 6 4 600 400 2 25°C 200 IC/IB = 10 IC/IB = 5 0 0 0 3 6 9 12 IC, COLLECTOR CURRENT (AMPS) 0 15 Figure 11. Resistive Switching, ton 15 8 6 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH IC/IB = 10 7 6 t, TIME (s) μ IC/IB = 5 7 t, TIME (s) μ 10 5 IC, COLLECTOR CURRENT (AMPS) Figure 12. Resistive Switch Time, toff 8 5 4 3 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 5 4 3 2 2 TJ = 125°C TJ = 25°C 1 TJ = 125°C TJ = 25°C 1 0 0 1 3 7 9 11 5 IC, COLLECTOR CURRENT (AMPS) 13 15 7 4 IC, COLLECTOR CURRENT (AMPS) 1 Figure 13. Inductive Storage Time, tsi 10 Figure 13 Bis. Inductive Storage Time, tsi 550 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 450 TJ = 125°C TJ = 25°C IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 700 600 tc 350 250 t, TIME (ns) t, TIME (ns) IB1 = IB2 VCC = 300 V PW = 20 ms tfi TC = 125°C TC = 25°C 500 tc 400 300 tfi 200 150 100 50 0 1 3 9 11 7 5 IC, COLLECTOR CURRENT (AMPS) 13 15 0 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 2 6 4 8 IC, COLLECTOR CURRENT (AMPS) Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 http://onsemi.com 6 10 BUH150G TYPICAL SWITCHING CHARACTERISTICS 5 200 IC = 5 A t fi , FALL TIME (ns) 150 3 2 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 1 IC = 10 A TJ = 125°C TJ = 25°C 0 2 100 IC = 5 A 50 4 6 hFE, FORCED GAIN 8 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 10 A 0 10 4 3 Figure 16. Inductive Storage Time 5 6 7 hFE, FORCED GAIN IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 700 600 TJ = 125°C TJ = 25°C IC = 10 A 500 400 IC = 5 A 300 200 100 3 4 8 Figure 17. Inductive Fall Time 800 t c , CROSSOVER TIME (ns) tsi , STORAGE TIME (μs) 4 TJ = 125°C TJ = 25°C 5 6 7 hFE, FORCED GAIN 8 9 Figure 18. Inductive Crossover Time http://onsemi.com 7 10 9 10 BUH150G TYPICAL SWITCHING CHARACTERISTICS 10 VCE IC 9 90% IC 8 dyn 1 ms 7 dyn 3 ms tfi tsi 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 90% IB 3 1 ms 2 IB IB 90% IB1 1 2 1 3 ms 0 0 3 TIME Figure 19. Dynamic Saturation Voltage Measurements 4 TIME 5 6 7 8 Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V IC PEAK 1 mF 150 W 3W 100 W 3W 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V IB Iout A COMMON IB2 50 W RB2 MJE210 500 mF 150 W 3W MTP12N10 1 mF -Voff V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA http://onsemi.com 8 Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 BUH150G TYPICAL THERMAL RESPONSE There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 40 20 60 80 120 100 TC, CASE TEMPERATURE (°C) 140 160 Figure 21. Forward Bias Power Derating 16 10 5 ms IC, COLLECTOR CURRENT (AMPS) 1 ms 10 ms 1 ms EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 DC 1 0.1 0.01 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 8 6 -5 V 4 0V 2 0 300 1000 TC ≤ 125°C LC = 4 mH 12 Figure 22. Forward Bias Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) GAIN ≥ 5 14 -1.5 V 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 Figure 23. Reverse Bias Safe Operating Area 1 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RqJC(t) = r(t) RqJC RqJC = 0.83°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10 t, TIME (ms) Figure 24. Typical Thermal Response (ZqJC(t)) for BUH150 http://onsemi.com 9 100 1000 BUH150G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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