ONSEMI NTHD5903T1

NTHD5903
Power MOSFET
−20 V, −3.0 A, Dual P−Channel ChipFETE
Features
•
•
•
•
Low RDS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
Pb−Free Package is Available
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ID MAX
V(BR)DSS
RDS(on) TYP
−20 V
130 mW @ −4.5 V
−3.0 A
215 mW @ −2.5 V
Applications
• Power Management in Portable and Battery−Powered Products;
S1
i.e., Cellular and Cordless Telephones and PCMCIA Cards
S2
G2
G1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
5 secs
Steady
State
Drain−Source Voltage
VDS
−20
V
Gate−Source Voltage
VGS
"12
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
ID
PD
Operating Junction and Storage
Temperature Range
−3.0
TJ, Tstg
A
−2.2
A
W
2.1
1.1
ChipFET
CASE 1206A
STYLE 2
1.1
0.6
°C
−55 to +150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
1 S1
1
D1 7
2 G1
2
D2 6
3 S2
3
D2 5
4 G2
4
8
A7 M
G
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
P−Channel MOSFET
"2.2
"1.6
"10
IDM
IS
P−Channel MOSFET
A
"3.0
"2.2
Continuous Source Current
(Diode Conduction) (Note 1)
D2
D1
Unit
7
6
5
A7 = Specific Device Code
M = Month Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping †
NTHD5903T1
ChipFET
3000/Tape & Reel
NTHD5903T1G
ChipFET
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
Publication Order Number:
NTHD5903/D
NTHD5903
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Junction−to−Ambient (Note 2)
tv5s
Steady State
RqJA
Maximum Junction−to−Foot (Drain) Steady State
RqJF
Typ
Max
50
90
60
110
30
40
Unit
°C/W
°C/W
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = −250 mA
−0.6
Gate−Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −16 V, VGS = 0 V
−1.0
mA
VDS = −16 V, VGS = 0 V,
TJ = 85°C
−5.0
Characteristic
Typ
Max
Unit
Static
Gate Threshold Voltage
V
On−State Drain Current (Note 3)
ID(on)
VDS v −5.0 V, VGS = −4.5 V
Drain−Source On−State Resistance (Note 3)
rDS(on)
VGS = −4.5 V, ID = −2.2 A
0.130
0.155
VGS = −3.6 V, ID = −2.0 A
0.150
0.180
VGS = −2.5 V, ID = −1.7 A
0.215
0.260
gfs
VDS = −10 V, ID = −2.2 A
5.0
VSD
IS = −2.2 A, VGS = 0 V
−0.8
−1.2
V
3.7
7.4
nC
13
20
ns
35
55
25
40
25
40
40
80
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
−10
A
W
S
Dynamic (Note 4)
Total Gate Charge
Qg
VDS = −10 V, VGS = −4.5 V,
ID = −2.2 A
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
1.3
tr
td(off)
Fall Time
tf
Source−Drain Reverse Recovery Time
trr
0.8
VDD = −10 V, RL = 10 W
ID ^ −1.0 A, VGEN = −4.5 V,
RG = 6 W
IF = −2.2 A, di/dt = 100 A/ms
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
NTHD5903
TYPICAL ELECTRICAL CHARACTERISTICS
10
10
−3.6 V
8
125°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = −4 V − 10 V
−3.4 V
TJ = 25°C
−3 V
6
−2.8 V
4
−2.6 V
VGS = −1.4 V
−2.4 V
2
−2.2 V
−1.8 V
0
2
3
4
5
TC = −55°C
6
4
2
6
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
1
2
3
4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
25°C
0
1
0
4
ID = −2.2 A
TJ = 25°C
3
2
1
0
0
1
2
3
4
5
TJ = 25°C
0.35
0.3
VGS = −2.5 V
0.25
0.2
VGS = −3.6 V
0.15
VGS = −4.5 V
0.1
0.05
1
2
3
4
5
6
7
8
9
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10
1.0E−6
ID = −2.2 A
VGS = −4.5 V
VGS = 0 V
TJ = 150°C
1.0E−7
IDSS, LEAKAGE (A)
1.4
1.2
TJ = 100°C
1.0E−8
1.0E−9
1
TJ = 25°C
1.0E−10
0.8
0.6
−50
5
0.4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.6
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
8
1.0E−11
−25
0
25
50
75
100
125
150
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTHD5903
TYPICAL ELECTRICAL CHARACTERISTICS
5
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
500
400
Crss
300
200
Coss
100
0
−12
−8
−4
0
−VGS −VDS
4
8
12
16
20
10
9
4
8
7
3
6
5
Qgd
Qgs
2
4
3
ID = −2.2 A
TJ = 25°C
1
2
1
0
0
0
1
2
3
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
5
VDD = −10 V
ID = −1.0 A
VGS = −4.5 V
IS, SOURCE CURRENT (AMPS)
td(off)
tf
tr
t, TIME (ns)
11
Qg
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS = 0 V
Ciss
−VGS, GATE−TO−SOURCE VOLTAGE (V)
600
td(on)
10
1
VGS = 0 V
TJ = 25°C
4
3
2
1
0
1
10
100
0
0.2
0.4
0.6
0.8
1
RG, GATE RESISTANCE (OHMS)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.2
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
Notes:
PDM
0.2
t1
0.1
t2
0.1
t1
1. Duty Cycle, D = t
2
2. Per Unit Base = RthJA = 90°C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10 −1
1
Square Wave Pulse Duration (sec)
10
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
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4
100
600
NTHD5903
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.092
0.043
0.635
0.025
0.178
0.007
0.457
0.018
0.711
0.028
0.66
0.026
0.254
0.010
0.66
0.026
Figure 12. Basic
SCALE 20:1
mm Ǔ
ǒinches
Figure 13. Style 2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 12. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 13 improves the thermal area of the drain
connections (pins 5, 6, 7, 8) while remaining within the
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
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NTHD5903
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
D
8
7
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
3
e1
4
b
DIM
A
b
c
D
E
e
e1
L
HE
q
c
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
A
0.05 (0.002)
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
Email: [email protected]
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For additional information, please contact your
local Sales Representative.
NTHD5903/D