MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space http://onsemi.com 300 mAMPS 20 VOLTS RDS(on) = 2.2 P−Channel 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 µs) ID ID 300 240 750 mAdc IDM Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD Operating and Storage Temperature Range TJ, Tstg Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds 1 2 150 1.2 mW mW/°C − 55 to 150 °C RθJA 833 °C/W TL 260 °C MARKING DIAGRAM 3 SC−70/SOT−323 CASE 419 STYLE 8 P3W 1 2 P3 W 1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. = Device Code = Work Week PIN ASSIGNMENT 3 Drain Gate 1 2 Source Top View ORDERING INFORMATION Device Package MMBF2202PT1 SC−70/ SOT−323 Shipping 3000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 4 1 Publication Order Number: MMBF2202PT1/D MMBF2202PT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) µAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) rDS(on) − − 1.5 2.0 2.2 3.5 gFS − 600 − mMhos pF ON CHARACTERISTICS (Note 2.) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss − 50 − Output Capacitance (VDS = 5.0 V) Coss − 45 − Transfer Capacitance (VDG = 5.0 V) Crss − 20 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 2700 − pC IS − − 0.3 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 3.) VSD − 1.5 − SWITCHING CHARACTERISTICS (Note 3.) Turn−On Delay Time (VDD = −15 Vdc, RL = 75 Ω, Ω ID = 200 mAdc mAdc, VGEN = −10 10 V, RG = 6.0 Ω) Rise Time Turn−Off Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. TYPICAL CHARACTERISTICS 4.0 8 r DS(on) , ON RESISTANCE (OHMS) r DS(on) , ON RESISTANCE (OHMS) 10 ID = 200 mA 6 4 2 0 0 1 2 3 4 5 6 7 8 9 3.5 3.0 2.5 2.0 VGS = 10 V ID = 200 mA 1.5 1.0 0.5 0 10 VGS = 4.5 V ID = 50 mA −40 −20 0 20 40 60 80 100 120 140 VGS, GATE−SOURCE VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 1. On Resistance versus Gate−Source Voltage Figure 2. On Resistance versus Temperature http://onsemi.com 2 160 MMBF2202PT1 TYPICAL CHARACTERISTICS 1.0 0.9 5 4 I D, DRAIN CURRENT (AMPS) RDS(on) , ON RESISTANCE (OHMS) 6 VGS = 4.5 V 3 VGS = 10 V 2 1 0.7 −55 0.6 0.5 150 25 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 3. On Resistance versus Drain Current Figure 4. Transfer Characteristics ID(on), DRAIN CURRENT (AMPS) 0.8 25° 150° 0.01 0.5 1.0 1.5 2.0 0.6 0.3 VGS = 3 V 0.1 0 1 2 3 4 5 6 7 8 Figure 6. On Region Characteristics 50 45 VGS = 0 V f = 1 MHz 40 35 30 25 20 Ciss 15 Coss 10 5 Crss 2 4 6 8 10 12 14 16 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 3 10 VGS = 3.5 V 0.2 Figure 5. Source−Drain Forward Voltage 0 9 VGS = 4 V 0.4 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 0 6.0 VGS = 4.5 V 0.5 0 2.5 5.5 VGS = 5 V 0.7 VSD, SOURCE−DRAIN FORWARD VOLTAGE (VOLTS) C, CAPACITANCE (pF) 0 4.5 5.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0.1 0.001 0 ID, DRAIN CURRENT (AMPS) 1 IS , SOURCE CURRENT (AMPS) 0.8 18 20 MMBF2202PT1 INFORMATION FOR USING THE SC−70/SOT−323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.025 0.65 0.65 0.075 1.9 0.035 0.9 0.028 inches 0.7 mm SC−70/SOT−323 POWER DISSIPATION one can calculate the power dissipation of the device which in this case is 150 milliwatts. The power dissipation of the SC−70/SOT−323 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SC−70/SOT−323 package, PD can be calculated as follows: PD = PD = 150°C − 25°C 833°C/W = 150 milliwatts The 833°C/W for the SC−70/SOT−323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SC−70/SOT−323 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) − TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 4 MMBF2202PT1 PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 5 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 MMBF2202PT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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