2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. FEATURES • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged and reliable. • High saturation current capability. • High-speed switcing. • CMOS logic compatible input. D • Not thermal runaway. • No secondary breakdown. G S ABSOLUTE MAXIMUM RATINGS TA = 25OC Unless otherwise noted. Parameter Drain-Source Voltage Drain-Gate Voltage (Rgs Symbol 2N7002 Units DSS 60 V VDRG 60 V ± 20 ± 20 V V ≤ 1MΩ) Gate Source Voltage -Continuous -No Repetitive (tp<50µs) V GSS Maximum Drain Current -Continuous -Pulsed ID 115 800 mA Maximum POwer Dissipation Derated Above 25OC P 200 mW TJ , TSTG -55 to +150 mW / OC RθJA 625 Operation and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Part Number: 2N7002 D O C/W PAGE 1 ELECTRICAL CHARACTERISTICS TA = 25OC Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10µA 60 - - V Zero Gate Voltage Drain Current I DSS VDS=60V, VGS=0V, TJ=25OC VDS=60V, VGS=0V, TJ=125OC - - 1.0 0.5 µA mA Gate - Body Leakage, Forward I GSSF VDS=0V, VGS=20V - - 100 nA Gate - Body Leakage, Reverse I GSSR VDS=0V, VGS= -20V - - -100 nA Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1 2.1 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=500mA, TJ=100OC - 1.2 7.5 Ω Drain-Source On-Voltage VDS(ON) VGS=10V, ID=500mA VGS=5.0V, ID=50mA - 0.60 0.09 3.75 1.50 V I D(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 2700 - mA GFS VDS ≥ 2VDS(ON), ID=200mA 80 320 - mS Input Capacitance CISS VDS=25V, VGS=0V, F=1.0 MHz - 20 50 pF Output Capacitance COSS VDS=25V, VGS=0V, F=1.0 MHz - 11 25 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, F=1.0 MHz - 4 5 pF Turn-On Time TON VDD=30V, RL=150Ω, ID=200 mA VGS=10V, RGEN=25Ω - - 20 ns Turn-Off Time TOFF VDD=30V, RL=150Ω, ID=200 mA VGS=10V, RGEN=25Ω - - 20 ns OFF CHARACTERISTICS ON CHARACTERISTICS (note1) On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Note: 1.Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Part Number: 2N7002 PAGE 2 V GS =10V 9.0 8.0 7.0 1.5 6.0 1.0 5.0 0.5 4.0 3.0 0 0 1 2 3 4 5 VDS, Drain-Source Coltage (V) RDS(ON), Normalized Drain-Source On-Resistance On-Region Characteristics V GS =10V I D =500mA 2.0 1.5 1.0 0.5 -50 -25 0 25 50 75 3.0 V GS =4.0V 2.5 4.5 2.0 100 125 150 O TJ, Junction Temperature ( C) O 25 C ID, Drain Current (A) O 125 C 1.6 1.2 0.8 0.4 0 2 4 6 8 VGS, Gate to Source Voltage (V) Transfer Characteristics Part Number: 2N7002 10 Vth, Normalized Gate-Source Threshold Voltage (V) V DS =10V 0 7.0 8.0 9.0 10 1.0 0.5 0 0.4 0.8 1.2 1.6 2.0 ID, Drain Current (A) V GS =10V 3.0 2.5 O TJ = 125 C 2.0 1.5 O 25 C 1.0 O -55 C 0.5 0 0 0.4 0.8 1.2 1.6 2.0 ID, Drain Current (A) On-Resistance v.s Drain 2.0 O 6.0 1.5 On-Resistance v.s Temperature TJ = -55 C 5.0 On-Resistance v.s. Gate Voltage and Drain Current RDS(ON), Normalized Drain-Source On-Resistance ID, Drain-Source Current (A) 2.0 RDS(ON), Normalized Drain-Source On-Resistance RATING and CHARACTERISTIC CURVES V DS = V GS I D = 1mA 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 O TJ, Junction Temperature ( C) Gate Threshold v.s. Temperature PAGE 3 RATING and CHARACTERISTIC CURVES V GS =0V Is, Reverse Drain Current (A) BVDSS, Normalized Drain-Source Breakdown Voltage (V) I D = 250 m A 1.10 1.05 1.00 0.95 0.925 -50 -25 0 25 50 75 100 125 1 O O 25 C 0.001 0.2 150 VGS, Gate to Source Voltage (V) Capactance (pF) CISS Coss 10 5 Crss 2 3 5 10 1.0 1.2 1.4 20 30 50 10 8 6 ID = 500mA 4 280mA 2 115mA 0 0 0.1 0.8 1.2 1.6 2.0 Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V) Capacitance Characteristics r(t) , Normailized Effective Transient Thermal Resistance 0.8 VDS = 25V V GS =0V 20 2 0.6 Body Diode Forward Voltage v.s. Current and Temperature 50 1 0.4 VSD, Body Diode Forward Voltage (V) Breakdown Voltage v.s. Temperature 1 O -55 C 0.01 TJ, Junction Temperature (OC) f=1MHz TJ = 125 C 0.1 Gate Charge Characteristics 1 0.5 RqJA (t) = r(t) * RqJA RqJA = (See Datasheet) 0.2 0.1 0.05 P(pk) t1 0.01 t2 TJ - TA = P * RqJA (t) Duty Cycle, D = t1 / t2 0.02 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 Tt ,Time (sec) Transient Thermal Respone Curve Part Number: 2N7002 PAGE 4 RATING and CHARACTERISTIC CURVES O V GS =10V, Single Pulse T A= 25 C VDD 3 2 10 0m ID, Drain Current (A) 1 0.5 L N) t imi s RL 1m s S(O RD VIN s 0.1 VGS 100 0.05 ms DC RGEN 10s 1s DUT G 0.01 0.005 VOUT D 10m S 1 2 5 10 20 30 60 80 VDS, Drain-Source Voltage (V) Switching Test Circuit Maximum Safe Operating Area t on t d(on) t off tr tf t d(off) 90% V OUT 90% 10% 10% 90% V IN 10% 50% Inverted 50% Pulse Width Switching Waveforms Part Number: 2N7002 PAGE 5 OUTLINE DRAWING .007(.20) MIN. SOT-23 .056(1.40) .047(1.20) .103(2.60) .086(2.20) .119(3.00) .110(2.80) .006(.15) .002(.05) .044(1.10) .035(.90) .006(.15) MAX. .083(2.10) .066(1.70) .020(.50) .013(.35) Part Number: 2N7002 PAGE 6