NTHD5903T1 Power MOSFET Dual P-Channel ChipFET 2.1 Amps, 20 Volts Features • Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Saves Board Space http://onsemi.com DUAL P–CHANNEL 2.1 AMPS, 20 VOLTS RDS(on) = 155 m Applications • Power Management in Portable and Battery–Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards S1 S2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 5 secs Steady State Unit Drain–Source Voltage VDS –20 V Gate–Source Voltage VGS 12 V Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C ID Continuous Source Current (Diode Conduction) (Note 1) IS Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C PD Operating Junction and Storage Temperature Range –1.8 P–Channel MOSFET A –0.9 A W 2.1 1.1 TJ, Tstg P–Channel MOSFET 2.1 1.5 10 IDM D2 D1 A 2.9 2.1 Pulsed Drain Current G2 G1 ChipFET CASE 1206A STYLE 2 1.1 0.6 °C –55 to +150 1. Surface Mounted on 1″ x 1″ FR4 Board. MARKING DIAGRAM PIN CONNECTIONS 8 1 S1 1 8 D1 7 2 G1 2 7 D2 6 3 S2 3 6 D2 5 4 G2 4 5 A7 D1 A7 = Specific Device Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 2 1 Device Package Shipping NTHD5903T1 ChipFET 3000/Tape & Reel Publication Order Number: NTHD5903T1/D NTHD5903T1 THERMAL CHARACTERISTICS Characteristic Symbol Maximum Junction–to–Ambient (Note 2) t 5 sec Steady State RthJA Maximum Junction–to–Foot (Drain) Steady State RthJF Typ Max 50 90 60 110 30 40 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = –250 A –0.6 – – V Gate–Body Leakage IGSS VDS = 0 V, VGS = 12 V – – 100 nA Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V – – –1.0 A VDS = –16 V, VGS = 0 V, TJ = 85°C – – –5.0 ID(on) VDS –5.0 V, VGS = –4.5 V –10 – – A rDS(on) ( ) VGS = –4.5 V, ID = –2.1 A – 0.130 0.155 VGS = –3.6 V, ID = –2.0 A – 0.150 0.180 VGS = –2.5 V, ID = –1.7 A – 0.215 0.260 gfs VDS = –10 V, ID = –2.1 A – 5.0 – S VSD IS = –0.9 A, VGS = 0 V – –0.8 –1.2 V – 3.0 6.0 nC Static Gate Threshold Voltage On–State Drain Current (Note 3) Drain–Source On–State Resistance (Note 3) Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge Qg 10 V 45V VDS = –10 V, VGS = –4.5 V, ID = –2.1 A Gate–Source Charge Qgs – 0.9 – Gate–Drain Charge Qgd – 0.6 – Turn–On Delay Time td(on) – 13 20 – 35 55 – 25 40 – 25 40 – 40 80 Rise Time Turn–Off Delay Time tr td(off) Fall Time tf Source–Drain Reverse Recovery Time trr VDD = –10 V, RL = 10 ID –1.0 –1 0 A, A VGEN = –4 –4.5 5V V, RG = 6 IF = –0.9 A, di/dt = 100 A/s 2. Surface Mounted on 1″ x 1″ FR4 Board. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 ns NTHD5903T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 10 3.6 V 8 125°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 4 V – 10 V 3.4 V TJ = 25°C 3V 6 2.8 V 4 2.6 V VGS = 1.4 V 2.4 V 2 2.2 V 1.8 V 0 25°C 1 2 3 4 5 6 4 2 6 0 2 3 4 1 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE () –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 4 ID = –2.1 A TJ = 25°C 3 2 1 0 0 5 1 3 2 4 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) TJ = 25°C 0.35 0.3 VGS = –2.5 V 0.25 0.2 VGS = –3.6 V 0.15 VGS = –4.5 V 0.1 0.05 1 2 3 4 5 6 7 8 9 10 –ID, DRAIN CURRENT (AMPS) Figure 4. On–Resistance vs. Drain Current and Gate Voltage 1.6 1.0E–6 ID = –2.1 A VGS = –4.5 V VGS = 0 V TJ = 150°C 1.0E–7 IDSS, LEAKAGE (A) 1.4 1.2 TJ = 100°C 1.0E–8 1.0E–9 1 TJ = 25°C 1.0E–10 0.8 0.6 –50 5 0.4 Figure 3. On–Resistance vs. Gate–to–Source Voltage RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) TC = –55°C 0 0 RDS(on), DRAIN–TO–SOURCE RESISTANCE () 8 1.0E–11 –25 0 25 50 75 100 125 150 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTHD5903T1 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 500 400 Crss 300 200 Coss 100 0 –12 –8 –4 VGS 0 VDS 4 8 12 16 20 6 6 QT 5 –VGS 4 4 3 3 Q1 Q2 2 2 ID = –2.1 A TJ = 25°C 1 1 0 0 0 0.5 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1 1.5 2 2.5 3 Qg, TOTAL GATE CHARGE (nC) 3.5 4 Figure 8. Gate–to–Source and Drain–to–Source Voltage vs. Total Charge Figure 7. Capacitance Variation 100 5 VDD = –10 V ID = –1.0 A VGS = –4.5 V IS, SOURCE CURRENT (AMPS) td(off) tf tr t, TIME (ns) 5 –VDS –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 600 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS td(on) 10 1 VGS = 0 V TJ = 25°C 4 3 2 1 0 1 10 100 0 0.2 0.4 0.8 0.6 1 RG, GATE RESISTANCE (OHMS) VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1.2 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 Notes: PDM 0.2 t1 0.1 t2 0.1 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90°C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.05 0.02 0.01 10–4 Single Pulse 10–3 10–2 10 –1 1 Square Wave Pulse Duration (sec) 10 Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient http://onsemi.com 4 100 600 NTHD5903T1 Notes http://onsemi.com 5 NTHD5903T1 Notes http://onsemi.com 6 NTHD5903T1 PACKAGE DIMENSIONS ChipFET CASE 1206A–03 ISSUE D A 8 7 M 6 K 5 S 5 6 7 8 4 3 2 1 B 1 2 3 L 4 D J G STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. C 0.05 (0.002) SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 2.00 1.80 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080 NTHD5903T1 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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