NTHD5904T1 Power MOSFET Dual N-Channel 3.1 Amps, 20 Volts Features • Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Saves Board Space http://onsemi.com DUAL N–CHANNEL 3.1 AMPS, 20 VOLTS RDS(on) = 75 m Applications • Power Management in Portable and Battery–Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards D2 D1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Steady State 5 secs Unit Drain–Source Voltage VDS 20 V Gate–Source Voltage VGS 12 V Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C ID IS Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C PD Operating Junction and Storage Temperature Range 1.8 N–Channel MOSFET A 0.9 A W 2.1 1.1 TJ, Tstg N–Channel MOSFET 3.1 2.2 10 IDM Continuous Source Current (Diode Conduction) (Note 1) S2 S1 A 4.2 3.0 Pulsed Drain Current G2 G1 ChipFET CASE 1206A STYLE 2 1.1 0.6 °C –55 to +150 MARKING DIAGRAM PIN CONNECTIONS 1. Surface Mounted on 1″ x 1″ FR4 Board. 8 1 S1 1 8 D1 7 2 G1 2 7 D2 6 3 S2 3 6 D2 5 4 G2 4 5 A1 D1 A1 = Specific Device Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 3 1 Device Package Shipping NTHD5904T1 ChipFET 3000/Tape & Reel Publication Order Number: NTHD5904T1/D NTHD5904T1 THERMAL CHARACTERISTICS Characteristic Symbol Maximum Junction–to–Ambient (Note 2) t 5 sec Steady State RthJA Maximum Junction–to–Foot (Drain) Steady State RthJF Typ Max 50 90 60 110 30 40 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 A 0.6 – – V Gate–Body Leakage IGSS VDS = 0 V, VGS = 12 V – – 100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V – – 1.0 A VDS = 16 V, VGS = 0 V, TJ = 85°C – – 5.0 ID(on) VDS 5.0 V, VGS = 4.5 V 10 – – A rDS(on) ( ) VGS = 4.5 V, ID = 3.1 A – 0.065 0.075 VGS = 2.5 V, ID = 2.3 A – 0.115 0.143 gfs VDS = 10 V, ID = 3.1 A – 8.0 – S VSD IS = 0.9 A, VGS = 0 V – 0.8 1.2 V – 4.0 6.0 nC – 0.6 – Static Gate Threshold Voltage On–State Drain Current (Note 3) Drain–Source On–State Resistance (Note 3) Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge Gate–Source Charge Qg VDS = 10 V V, VGS = 4 4.5 5V V, ID = 3.1 A Qgs Gate–Drain Charge Qgd – 1.3 – Turn–On Delay Time td(on) – 12 18 – 35 55 – 19 30 – 9.0 15 – 40 80 Rise Time Turn–Off Delay Time tr td(off) Fall Time tf Source–Drain Reverse Recovery Time trr VDD = 10 V, RL = 10 ID 1.0 1 0 A, A VGEN = 4 4.5 5V V, RG = 6 IF = 0.9 A, di/dt = 100 A/s 2. Surface Mounted on 1″ x 1″ FR4 Board. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 ns NTHD5904T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 10 TC = –55°C VGS = 5 thru 3 V D,Drain Current (A) 2.5 V 6 4 125°C 6 4 I ID,Drain Current (A) 25°C 8 8 2V 2 2 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 VDS, Drain–to–Source Voltage (V) 0 3.0 0 0.5 0.30 600 0.25 500 0.20 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 Ciss 400 300 200 Coss 100 Crss 0 0 0 2 4 6 8 0 10 4 ID, Drain Current (A) 8 12 16 VDS, Drain–to–Source Voltage (V) Figure 3. On–Resistance vs. Drain Current 1.6 r DS(on),On–Resistance ( Ω ) (Normalized) VGS,Gate–to–Source Voltage (V) 20 Figure 4. Capacitance 5 VDS = 10 V ID = 3.1 A 4 3 2 1 0 3.5 Figure 2. Transfer Characteristics C, Capacitance (pF) r DS(on),On–Resistance ( Ω ) Figure 1. Output Characteristics 1.0 1.5 2.0 2.5 3.0 VGS, Gate–to–Source Voltage (V) 0 1 2 3 Qg, Total Gate Charge (nC) 1.4 1.2 1.0 0.8 0.6 –50 4 VGS = 4.5 V ID = 3.1 A Figure 5. Gate Charge –25 0 25 50 75 100 TJ, Junction Temperature (°C) Figure 6. On–Resistance vs. Junction Temperature http://onsemi.com 3 125 150 NTHD5904T1 TYPICAL ELECTRICAL CHARACTERISTICS 0.20 rDS(on),On–Resistance ( Ω ) I S,Source Current (A) 10 TJ = 150°C TJ = 25°C 1 0.15 ID = 3.1 A 0.10 0.05 0 0 0.2 0.4 0.6 0.8 1.0 VDS, Drain–to–Source Voltage (V) 1.2 0 Figure 7. Source–Drain Diode Forward Voltage 1 2 3 4 VGS, Gate–to–Source Voltage (V) 5 Figure 8. On–Resistance vs. Gate–to–Source Voltage 0.4 50 0.2 V GS (th),Varience (V) 40 ID = 250 A Power (W) –0.0 –0.2 30 20 –0.4 10 –0.6 –25 0 25 50 75 100 TJ, Temperature (°C) 125 0 10–4 150 10–3 Figure 9. Threshold Voltage 10–2 VGS = 0 V TJ = 25°C 4 3 2 1 0 0 0.2 10 –1 1 Time (sec) 10 Figure 10. Single Pulse Power 5 –IS, SOURCE CURRENT (AMPS) –0.8 –50 0.4 0.6 0.8 1.0 –VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage vs. Current http://onsemi.com 4 1.2 100 600 NTHD5904T1 TYPICAL ELECTRICAL CHARACTERISTICS Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 Notes: PDM 0.2 t1 0.1 t2 0.1 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90°C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10 –1 1 Square Wave Pulse Duration (sec) 10 100 600 Figure 12. Normalized Thermal Transient Impedance, Junction–to–Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10 –1 Square Wave Pulse Duration (sec) 1 Figure 13. Normalized Thermal Transient Impedance, Junction–to–Foot http://onsemi.com 5 10 NTHD5904T1 Notes http://onsemi.com 6 NTHD5904T1 PACKAGE DIMENSIONS ChipFET CASE 1206A–03 ISSUE C A 8 7 M 6 K 5 S 5 6 7 8 4 3 2 1 B 1 2 3 L 4 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. J G DIM A B C D G J K L M S C 0.05 (0.002) MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 2.00 1.80 STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. http://onsemi.com 7 SOURCE 1 GATE 1 SOURCE GATE 2 DRAIN 1 DRAIN 1 DRAIN 2 DRAIN 2 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080 NTHD5904T1 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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