NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications • • • • 30 AMPERES 60 VOLTS RDS(on) = 46 mΩ Power Supplies Converters Power Motor Controls Bridge Circuits N–Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 10 MΩ) Gate–to–Source Voltage – Continuous – Non–Repetitive (tp10 ms) Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 26 A, VDS = 60 Vdc) Thermal Resistance – Junction–to–Case Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol Value Unit VDSS VDGR 60 Vdc 60 Vdc G Vdc VGS VGS 15 20 ID ID IDM PD 30 15 90 Adc 88.2 0.59 W W/°C TJ, Tstg –55 to +175 °C EAS 101 mJ 4 S 4 1 2 3 Apk 1 D2PAK CASE 418B STYLE 2 TO–220AB CASE 221A STYLE 5 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain °C/W RθJC 1.7 TL 260 °C NTx30N06L LLYWW NTx30N06L LLYWW 1 Gate 3 Source 2 Drain 1 Gate NTx30N06L x LL Y WW 2 Drain 3 Source = Device Code = P or B = Location Code = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 1 1 Package Shipping NTP30N06L TO–220AB 50 Units/Rail NTB30N06L D2PAK 50 Units/Rail NTB30N06LT4 D2PAK 800/Tape & Reel Publication Order Number: NTP30N06L/D NTP30N06L, NTB30N06L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 – 71.8 69 – – – – – – 1.0 10 – – ±100 1.0 – 1.7 4.8 2.0 – – 38 46 – – 1.3 1.06 1.7 – gFS – 21 – mhos Ciss – 810 1150 pF Coss – 260 370 Crss – 80 115 td(on) – 10 20 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 1.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (Note 1.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 1.) (VGS = 5.0 Vdc, ID = 15 Adc) RDS(on) Static Drain–to–Source On–Voltage (Note 1.) (VGS = 5.0 Vdc, ID = 30 Adc) (VGS = 5.0 Vdc, ID = 15 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 15 Adc) Vdc mV/°C mΩ Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time (VDD = 30 Vdc, ID = 30 Adc, VGS = 5.0 Vdc, RG = 9.1 Ω) (Note 1.) Turn–Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 30 Adc, Ad VGS = 5.0 Vdc) (Note 1.) ns tr – 200 400 td(off) – 15.6 30 tf – 62 120 QT – 16 32 Q1 – 3.9 – Q2 – 10 – VSD – – 1.01 1.03 1.2 – Vdc trr – 50 – ns ta – 32 – tb – 17 – QRR – 0.082 – nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 30 Adc, VGS = 0 Vdc) (Note 1.) (IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 30 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/µs) (Note 1.) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 µC NTP30N06L, NTB30N06L 60 60 50 8V 40 6V VDS ≥ 10 V 5.5 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 10 V 5V 4.5 V 30 4V 20 3.5 V 10 3V 50 40 30 20 TJ = 25°C 10 TJ = 100°C TJ = –55°C 0 0 4 5 1 2 3 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0 1.5 6 0.1 VGS = 5 V 0.08 TJ = 100°C 0.06 TJ = 25°C 0.04 TJ = –55°C 0.02 0 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) 0.1 VGS = 10 V 0.08 0.06 TJ = 100°C 0.04 TJ = 25°C TJ = –55°C 0.02 0 0 20 30 40 50 60 Figure 4. On–Resistance versus Drain Current and Gate Voltage 10000 2 VGS = 0 V ID = 15 A VGS = 5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 10 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–to–Source Voltage 1.8 6.5 Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) Figure 1. On–Region Characteristics 2.5 3.5 4.5 5.5 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1.6 TJ = 150°C 1000 1.4 1.2 1 100 TJ = 100°C 0.8 0.6 –50 –25 10 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current versus Voltage http://onsemi.com 3 60 2800 VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) 2400 2000 Ciss 1600 1200 Crss Ciss 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) NTP30N06L, NTB30N06L 6 QT 5 Q1 Q2 4 VGS 3 2 1 ID = 30 A TJ = 25°C 0 0 4 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) 20 IS, SOURCE CURRENT (AMPS) 32 tr t, TIME (ns) 16 Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge 1000 100 tf 10 td(off) VDS = 30 V ID = 30 A VGS = 5 V td(on) 1 10 VGS = 0 V TJ = 25°C 24 16 8 0 0.6 100 RG, GATE RESISTANCE (Ω) VGS = 15 V SINGLE PULSE TC = 25°C 10 ms 10 1 ms 100 µs 10 µs 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 0.76 0.84 0.92 1 1.08 dc 10 100 Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) 1000 100 0.68 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (AMPS) 12 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1 8 120 ID = 26 A 100 80 60 40 20 0 25 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTP30N06L, NTB30N06L 1 D = 0.5 0.2 P(pk) 0.1 0.05 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.0001 0.01 0.001 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.1 1 t, TIME (s) Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 10 NTP30N06L, NTB30N06L PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA SEATING PLANE –T– B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NTP30N06L, NTB30N06L PACKAGE DIMENSIONS D2PAK CASE 418B–03 ISSUE D C E V –B– 4 A 1 2 3 S –T– SEATING PLANE K J G D 3 PL 0.13 (0.005) H M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 7 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 NTP30N06L, NTB30N06L ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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