ONSEMI MJB45H11

MJB44H11 (NPN),
MJB45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
D2PAK for Surface Mount
http://onsemi.com
. . . for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
SILICON POWER
TRANSISTORS
10 AMPERES
80 VOLTS
50 WATTS
• Low Collector−Emitter Saturation Voltage −
•
•
•
•
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V−O @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VEB
5
Vdc
Collector Current − Continuous
− Peak
IC
10
20
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Collector−Emitter Voltage
Emitter−Base Voltage
Operating and Storage Junction
Temperature Range
TJ, Tstg
50
1.67
Watts
W/°C
2.0
0.016
Watts
W/°C
−55 to
150
°C
D2PAK
CASE 418B
STYLE 1
Y
WW
B4xH11
x
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.5
°C/W
Thermal Resistance, Junction to Ambient
RθJA
75
°C/W
= Year
= Work Week
= Specific Device Code
= 4 or 5
ORDERING INFORMATION
Package
Shipping†
MJB44H11
D2PAK
50 Units/Rail
MJB44H11T4
D2PAK
800/Tape & Reel
MJB45H11
D2PAK
50 Units/Rail
MJB45H11T4
D2PAK
800/Tape & Reel
Device
THERMAL CHARACTERISTICS
Characteristic
B4xH11
YWW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 1
1
Publication Order Number:
MJB44H11/D
MJB44H11 (NPN), MJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
80
−
−
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
−
−
10
µA
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
−
−
50
µA
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
−
−
1.0
Vdc
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
−
−
1.5
Vdc
hFE
60
−
−
−
40
−
−
−
−
130
230
−
−
−
−
50
40
−
−
−
−
300
135
−
−
−
−
500
500
−
−
−
−
140
100
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
Ccb
MJB44H11
MJB45H11
pF
fT
MJB44H11
MJB45H11
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
td + tr
MJB44H11
MJB45H11
ns
ts
MJB44H11
MJB45H11
ns
tf
MJB44H11
MJB45H11
http://onsemi.com
2
ns
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJB44H11 (NPN), MJB45H11 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.02
0.03
0.02
0.01
0.01
0.01
P(pk)
ZθJC(t) = r(t) RθJC
RθJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZθJC(t)
0.05
0.07
0.05
t1
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
t2
50
100
200
500
1.0 k
Figure 1. Thermal Response
50
30
20
1.0 ms
5.0
3.0
2.0
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
10
10 µs
TC ≤ 70° C
DUTY CYCLE ≤ 50%
dc
1.0 µs
0.5
0.3
0.2
0.1
1.0
5.0 7.0 10
2.0 3.0
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMPS)
100
TA
TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
3
140
160
MJB44H11 (NPN), MJB45H11 (PNP)
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
VCE = 4 V
100
VCE = 1 V
TJ = 25°C
10
0.1
1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJB44H11 DC Current Gain
Figure 5. MJB45H11 DC Current Gain
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
25°C
100
−40 °C
VCE = 1 V
0.1
1
VCE = 1 V
0.1
1
10
Figure 6. MJB44H11 Current Gain
versus Temperature
Figure 7. MJB45H11 Current Gain
versus Temperature
SATURATION VOLTAGE (VOLTS)
1.2
VBE(sat)
0.6
0
0.1
100
IC, COLLECTOR CURRENT (AMPS)
0.8
0.2
25°C
−40 °C
IC, COLLECTOR CURRENT (AMPS)
1
0.4
TJ = 125°C
10
10
1.2
SATURATION VOLTAGE (VOLTS)
1V
10
0.1
10
1000
10
VCE = 4 V
100
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
1
0.8
0.6
0.4
IC/IB = 10
TJ = 25°C
VCE(sat)
0.2
0
0.1
10
VBE(sat)
Figure 8. MJB44H11 On−Voltages
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. MJB45H11 On−Voltages
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4
10
MJB44H11 (NPN), MJB45H11 (PNP)
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE H
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
K
SEATING
PLANE
W
J
G
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
M
T B
M
N
R
P
L
M
STYLE 1:
PIN 1.
2.
3.
4.
U
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
0.33
8.38
0.42
10.66
0.24
6.096
0.04
1.016
0.12
3.05
inches
0.67
17.02
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MJB44H11 (NPN), MJB45H11 (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Email: [email protected]
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
MJB44H11/D