MJB44H11 (NPN), MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi.com . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS 50 WATTS • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V−O @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VCEO 80 Vdc VEB 5 Vdc Collector Current − Continuous − Peak IC 10 20 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Collector−Emitter Voltage Emitter−Base Voltage Operating and Storage Junction Temperature Range TJ, Tstg 50 1.67 Watts W/°C 2.0 0.016 Watts W/°C −55 to 150 °C D2PAK CASE 418B STYLE 1 Y WW B4xH11 x Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.5 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W = Year = Work Week = Specific Device Code = 4 or 5 ORDERING INFORMATION Package Shipping† MJB44H11 D2PAK 50 Units/Rail MJB44H11T4 D2PAK 800/Tape & Reel MJB45H11 D2PAK 50 Units/Rail MJB45H11T4 D2PAK 800/Tape & Reel Device THERMAL CHARACTERISTICS Characteristic B4xH11 YWW †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 1 1 Publication Order Number: MJB44H11/D MJB44H11 (NPN), MJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 80 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 µA Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 µA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc hFE 60 − − − 40 − − − − 130 230 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Ccb MJB44H11 MJB45H11 pF fT MJB44H11 MJB45H11 MHz SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) td + tr MJB44H11 MJB45H11 ns ts MJB44H11 MJB45H11 ns tf MJB44H11 MJB45H11 http://onsemi.com 2 ns r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJB44H11 (NPN), MJB45H11 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.03 0.02 0.01 0.01 0.01 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZθJC(t) 0.05 0.07 0.05 t1 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 20 t2 50 100 200 500 1.0 k Figure 1. Thermal Response 50 30 20 1.0 ms 5.0 3.0 2.0 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 µs 10 10 µs TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.0 µs 0.5 0.3 0.2 0.1 1.0 5.0 7.0 10 2.0 3.0 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMPS) 100 TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 140 160 MJB44H11 (NPN), MJB45H11 (PNP) 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25°C 10 0.1 1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. MJB44H11 DC Current Gain Figure 5. MJB45H11 DC Current Gain 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 25°C IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 25°C 100 −40 °C VCE = 1 V 0.1 1 VCE = 1 V 0.1 1 10 Figure 6. MJB44H11 Current Gain versus Temperature Figure 7. MJB45H11 Current Gain versus Temperature SATURATION VOLTAGE (VOLTS) 1.2 VBE(sat) 0.6 0 0.1 100 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 25°C −40 °C IC, COLLECTOR CURRENT (AMPS) 1 0.4 TJ = 125°C 10 10 1.2 SATURATION VOLTAGE (VOLTS) 1V 10 0.1 10 1000 10 VCE = 4 V 100 IC/IB = 10 TJ = 25°C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 1 0.8 0.6 0.4 IC/IB = 10 TJ = 25°C VCE(sat) 0.2 0 0.1 10 VBE(sat) Figure 8. MJB44H11 On−Voltages 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJB45H11 On−Voltages http://onsemi.com 4 10 MJB44H11 (NPN), MJB45H11 (PNP) PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE H C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− K SEATING PLANE W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R P L M STYLE 1: PIN 1. 2. 3. 4. U L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 0.33 8.38 0.42 10.66 0.24 6.096 0.04 1.016 0.12 3.05 inches 0.67 17.02 mm *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB44H11 (NPN), MJB45H11 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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