(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Packages are Available* TO−225AA CASE 77 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 VCEO 40 60 80 Vdc Collector−Base Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 VCBO 40 60 80 Vdc VEBO 5.0 Vdc IC 4.0 8.0 Adc Apk Base Current IB 100 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 320 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C – 65 to + 150 °C Emitter−Base Voltage Collector Current Continuous Peak Operating and Storage Junction Temperature Range TJ, Tstg MARKING DIAGRAM YWW 2 N603xG Y WW 2N603x G = Year = Work Week = Device Code x = 4, 5, 6, 8, 9 = Pb−Free Package ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 3 2 1 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W Thermal Resistance, Junction−to−Ambient RqJA 83.3 °C/W See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 13 1 Publication Order Number: 2N6035/D (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max 40 60 80 − − − − − − 100 100 100 − − − − − − 100 100 100 500 500 500 − − − 0.5 0.5 0.5 − 2.0 500 750 100 − 15,000 − − − 2.0 3.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) 2N6034 2N6035, 2N6038 2N6036, 2N6039 Collector−Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039 Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Collector−Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039 Vdc mA ICEO mA ICEX ICBO Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) VBE(sat) − 4.0 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc |hfe| 25 − − − − 200 100 DYNAMIC CHARACTERISTICS Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob 2N6034, 2N6035, 2N6036 2N6038, 2N6039 *Indicates JEDEC Registered Data. http://onsemi.com 2 pF (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 4.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC −30 V VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25°C 2.0 RC SCOPE t, TIME (s) μ TUT V2 approx +8.0 V RB D1 51 0 V1 approx −12 V ≈ 8.0 k ≈ 60 +4.0 V 25 ms tr 0.6 0.4 for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tf 1.0 0.8 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. 0.1 r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED Figure 1. Switching Times Test Circuit 1.0 0.7 0.5 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 2. Switching Times D = 0.5 0.3 0.2 0.2 0.1 P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.07 0.05 0.03 td @ VBE(off) = 0 PNP NPN 0.02 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 Figure 3. Thermal Response http://onsemi.com 3 20 30 50 100 200 300 500 1000 (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 ACTIVE−REGION SAFE−OPERATING AREA IC, COLLECTOR CURRENT (AMP) 5.0ms 3.0 2.0 1.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 7.0 1.0ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1.0 0.7 0.5 0.3 0.2 2N6036 2N6035 70 20 10 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.1 5.0 100 100 ms 5.0ms 3.0 2.0 dc 1.0 0.7 0.5 0.1 5.0 1.0 7.0 5.0 100 ms IC, COLLECTOR CURRENT (AMP) 1.0 7.0 5.0 2N6039 2N6038 7.0 20 10 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. 2N6035, 2N6036 100 Figure 5. 2N6038, 2N6039 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 4 and 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC = 25°C C, CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 6. Capacitance PNP 2N6034, 2N6035, 2N6036 NPN 2N6038, 2N6039 6.0 k 6.0 k 4.0 k 4.0 k 3.0 k hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 3.0 V TC = 125°C 25°C 2.0 k −55 °C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 k 25°C 2.0 k −55 °C 1.0 k 800 600 400 300 0.04 0.06 4.0 Figure 7. DC Current Gain http://onsemi.com 4 VCE = 3.0 V TJ = 125°C 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 3.4 TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 100 50 3.4 3.0 TJ = 25°C IC = 0.5 A 2.6 1.0 A 4.0 A 2.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 10 5.0 IB, BASE CURRENT (mA) 20 50 100 Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 0.2 0.04 0.06 2.0 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages ORDERING INFORMATION Device Package 2N6034 TO−225AA 2N6034G TO−225AA (Pb−Free) 2N6035 TO−225AA 2N6035G TO−225AA (Pb−Free) 2N6036 TO−225AA 2N6036G TO−225AA (Pb−Free) 2N6038 TO−225AA 2N6038G TO−225AA (Pb−Free) 2N6039 TO−225AA 2N6039G TO−225AA (Pb−Free) http://onsemi.com 5 Shipping 500 Units / Box 2.0 4.0 (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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