MMBT3416LT3G General Purpose Amplifier NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VEBO 4.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 3 Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. GP M G G 1 GP = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT3416LT3G Package Shipping† SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: MMBT3416LT3/D MMBT3416LT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO1 − 100 nAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 100 nAdc DC Current Gain (IC = 2.0 mAdc, VCE = 4.5 Vdc) hFE 75 225 − Collector −Emitter Saturation Voltage (IC = 50 mAdc, IB = 3.0 mAdc) VCE(sat) − 0.3 Vdc Base −Emitter Saturation Voltage (IC = 50 mAdc, IB = 3.0 mAdc) VBE(sat) 0.6 1.3 Vdc ICBO2 − 15 mAdc hFE 75 − − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS SMALL−SIGNAL CHARACTERISTICS Collector Cutoff Current (VCB = 18 Vdc, TA = 100°C) Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz) EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V +3.0 V 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +10.9 V 10 k -0.5 V <1.0 ns 275 10 k 0 CS < 4.0 pF* -9.1 V < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 CS < 4.0 pF MMBT3416LT3G TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 mA 7.0 5.0 10 mA 3.0 20 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 10 mA 0.2 2.0 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k 10 20 50 Figure 3. Noise Voltage 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 200k 100k 50k 20k 10k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz 500k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1 Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 Ǔ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3 In = Noise Current of the Transistor referred to the input. (Figure 4 K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 2.0 dB 200 100 50 ǒ 1k IC, COLLECTOR CURRENT (mA) Figure 7. Wideband http://onsemi.com 3 MMBT3416LT3G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 -55°C 100 80 MPS390 VCE 4 = 1.0 V VCE = 10 V 60 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 MPS3904 TJ = 25°C 0.8 IC = 1.0 mA 0.6 10 mA 50 mA IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 200 mA 40 100 mA 20 0 5.0 10 0 20 θV, TEMPERATURE COEFFICIENTS (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Collector Characteristics 1.4 0.1 400 mA 300 mA 60 Figure 9. Collector Saturation Region 0.8 IB = 500 mA 50 1.6 0.8 25°C to 125°C 0 *qVC for VCE(sat) - 55°C to 25°C -0.8 25°C to 125°C -1.6 qVB for VBE -2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 11. “On” Voltages 0.2 - 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 4 50 1 MMBT3416LT3G TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 1.0 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 30 50 70 1 Figure 14. Turn−Off Time 500 10 TJ = 25°C f = 100 MHz TJ = 25°C f = 1.0 MHz 7.0 300 VCE = 20 V 200 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 20 IC, COLLECTOR CURRENT (mA) Figure 13. Turn−On Time 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current−Gain — Bandwidth Product Figure 16. Capacitance 20 10 MPS3904 hfe ≈ 200 @ IC = 1.0 mA 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 200 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hoe, OUTPUT ADMITTANCE ( m mhos) hie , INPUT IMPEDANCE (k Ω ) 5.0 7.0 10 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPS3904 hfe ≈ 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 17. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 18. Output Admittance http://onsemi.com 5 50 1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBT3416LT3G 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19A 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100 Figure 19. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 19 by the steady state value RqJA. 103 102 ICEO 101 Example: The MPS3904 is dissipating 2.0 W peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -4 0 -2 0 0 The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) For more information, see AN−569. Figure 19A. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25°C dc dc TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 10 ms 1.0 s TA = 25°C 20 4.0 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 20. http://onsemi.com 6 MMBT3416LT3G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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