ONSEMI 2N5087

ON Semiconductor
Amplifier Transistor
2N5087
PNP Silicon
ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
50
Vdc
Collector–Base Voltage
VCBO
50
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Operating and Storage Junction
Temperature Range
1
2
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
50
—
Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
—
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
50
nAdc
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
1
November, 2001 – Rev. 1
Publication Order Number:
2N5087/D
2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
250
250
250
800
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
0.3
Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
0.85
Vdc
fT
40
—
MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
4.0
pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
250
900
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)
NF
—
—
2.0
2.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
—
dB
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 µA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 µA
3.0
100 µA
300 µA
1.0 mA
2.0
IC = 1.0 mA
3.0
2.0
300 µA
1.0
0.7
0.5
100 µA
0.3
30 µA
0.2
1.0
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
0.1
10k
BANDWIDTH = 1.0 Hz
RS ≈ ∞
10 µA
10
Figure 1. Noise Voltage
20
50
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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2
5.0k
10k
2N5087
NOISE FIGURE CONTOURS
1.0M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
1.0M
500k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = –5.0 Vdc, TA = 25°C)
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
2.0 dB
3.0 dB
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
20k
10k
2 2 12
S In RS en2 4KTR
4KTRS
NF 20 log10
0.5 dB
5.0k
2.0k
1.0k
500
200
100
30
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
500 700 1.0k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
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3
2N5087
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125°C
25°C
200
-55°C
100
80
60
40
0.003 0.005
VCE = 1.0 V
VCE = 10 V
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0
10
20
30
50 70 100
1.0
100
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 µs
80 DUTY CYCLE ≤ 2.0%
300 µA
200 µA
150 µA
40
100 µA
20
50 µA
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 8. Collector Characteristics
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 7. Collector Saturation Region
1.4
250 µA
60
0
20
IB = 400 µA
350 µA
50
100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
0
*VC for VCE(sat)
25°C to 125°C
-55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
Figure 9. “On” Voltages
VB for VBE
0.2
-55°C to 25°C
0.5 1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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50
100
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
tf
30
td @ VBE(off) = 0.5 V
2.0
100
70
50
20
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70
10
-1.0
100
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
IC, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 12. Turn–Off Time
500
10
TJ = 25°C
C, CAPACITANCE (pF)
VCE = 20 V
300
5.0 V
200
TJ = 25°C
7.0
100
Cib
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current–Gain — Bandwidth Product
Figure 14. Capacitance
20
VCE = -10 Vdc
f = 1.0 kHz
TA = 25°C
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0 2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
200
hoe, OUTPUT ADMITTANCE ( mhos)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 11. Turn–On Time
hie , INPUT IMPEDANCE (k Ω )
VCC = -3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
50
30
20
10
7.0
5.0
3.0
Figure 15. Input Impedance
0.2
0.5 1.0 2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
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5
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
2.0
0.1
100
10
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
2N5087
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
0.01
0.01
0.01 0.02
t1
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZJA(t) = r(t) RJA
TJ(pk) – TA = P(pk) ZJA(t)
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 17. Thermal Response
IC, COLLECTOR CURRENT (mA)
400
200
100 µs
100
TC = 25°C
60
TA = 25°C
40
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
2.0
6.0
8.0 10
1.0 s
dc
dc
20
4.0
The safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 17. At high case
or ambient temperatures, thermal limitations will reduce the
power than can be handled to values less than the limitations
imposed by second breakdown.
10 µs
1.0 ms
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
40
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
A train of periodical power pulses can be represented by
the model as shown in Figure 19. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 17 was calculated for various
duty cycles.
To find ZθJA(t), multiply the value obtained from Figure
17 by the steady state value RθJA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
Figure 18. Active–Region Safe Operating Area
IC, COLLECTOR CURRENT (nA)
104
103
VCC = 30 V
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
10-1
10-2
-40
-20
0
+20 +40 +60 +80 +100 +120 +140 +160
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Typical Collector Leakage Current
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2N5087
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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7
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
2N5087
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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2N5087/D