ON Semiconductor Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 1 2 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 50 — Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO — 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 50 nAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 1 November, 2001 – Rev. 1 Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 250 250 250 800 — — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) hFE — Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.3 Vdc Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) — 0.85 Vdc fT 40 — MHz Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 4.0 pF Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 250 900 Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) NF — — 2.0 2.0 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) — dB 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. TYPICAL NOISE CHARACTERISTICS (VCE = –5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 µA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 µA 3.0 100 µA 300 µA 1.0 mA 2.0 IC = 1.0 mA 3.0 2.0 300 µA 1.0 0.7 0.5 100 µA 0.3 30 µA 0.2 1.0 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 0.1 10k BANDWIDTH = 1.0 Hz RS ≈ ∞ 10 µA 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 2 5.0k 10k 2N5087 NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 1.0M 500k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = –5.0 Vdc, TA = 25°C) 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: 20k 10k 2 2 12 S In RS en2 4KTR 4KTRS NF 20 log10 0.5 dB 5.0k 2.0k 1.0k 500 200 100 30 en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0k IC, COLLECTOR CURRENT (µA) Figure 5. Wideband http://onsemi.com 3 2N5087 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 -55°C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 150 µA 40 100 µA 20 50 µA 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 7. Collector Saturation Region 1.4 250 µA 60 0 20 IB = 400 µA 350 µA 50 100 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 0 *VC for VCE(sat) 25°C to 125°C -55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 Figure 9. “On” Voltages VB for VBE 0.2 -55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 4 50 100 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 tf 30 td @ VBE(off) = 0.5 V 2.0 100 70 50 20 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 12. Turn–Off Time 500 10 TJ = 25°C C, CAPACITANCE (pF) VCE = 20 V 300 5.0 V 200 TJ = 25°C 7.0 100 Cib 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance 20 VCE = -10 Vdc f = 1.0 kHz TA = 25°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 200 hoe, OUTPUT ADMITTANCE ( mhos) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 11. Turn–On Time hie , INPUT IMPEDANCE (k Ω ) VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 50 30 20 10 7.0 5.0 3.0 Figure 15. Input Impedance 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance http://onsemi.com 5 20 VCE = 10 Vdc f = 1.0 kHz TA = 25°C 2.0 0.1 100 10 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5087 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 0.01 0.01 0.01 0.02 t1 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZJA(t) = r(t) RJA TJ(pk) – TA = P(pk) ZJA(t) t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 400 200 100 µs 100 TC = 25°C 60 TA = 25°C 40 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 2.0 6.0 8.0 10 1.0 s dc dc 20 4.0 The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 µs 1.0 ms DESIGN NOTE: USE OF THERMAL RESPONSE DATA 40 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. Figure 18. Active–Region Safe Operating Area IC, COLLECTOR CURRENT (nA) 104 103 VCC = 30 V ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (°C) Figure 19. Typical Collector Leakage Current http://onsemi.com 6 2N5087 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N5087 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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