ONSEMI NSS30070MR6T1G

NSS30070MR6T1G
30 V, 0.7 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
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30 VOLTS
0.7 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 320 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
30
V
Collector−Base Voltage
VCBO
40
V
Emitter−Base Voltage
VEBO
5.0
V
Collector Current
IC
700
mA
Base Current
IB
350
mA
SC−74
CASE 318F
STYLE 2
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction−to−Ambient
(Note 1)
PD
PD
RqJA
342
178
366
mW
mW
°C/W
DEVICE MARKING
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
PD
PD
RqJA
665
346
188
mW
mW
°C/W
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Operating to Steady State.
4
6 5
1 2
3
VS2M
VS2 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NSS30070MR6T1G
Package
Shipping†
SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NSS30070MR6/D
NSS30070MR6T1G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
(IC = 100 mA)
V(BR)CBO
40
−
−
V
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
30
−
−
V
Emitter−Base Breakdown Voltage
(IE = 100 mA)
V(BR)EBO
5.0
−
−
V
(VCB = 25 V, IE = 0 A)
(VCB = 25 V, IE = 0 A, TA = 125°C)
ICBO
−
−
−
−
1.0
10
mA
(VEB = 5.0 V, IC = 0 A)
IEBO
−
−
10
mA
(VCE = 3.0 V, IC = 100 mA)
hFE
150
−
−
V
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.25
V
Collector −Emitter Saturation Voltage
(IC = 700 mA, IB = 70 mA)
VCE(sat)
−
−
0.4
V
Base−Emitter Saturation Voltage
(IC = 700 mA, IB = 70 mA)
VBE(sat)
−
−
1.1
V
(IC = 700 mA, VCE = 1.0 V)
VBE(on)
−
−
1.0
V
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
0.5
VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V)
Collector−Emitter Saturation Voltage
0.4
0.3
0.7 A
0.2
0.5 A
0.1
0
10 mA
IC = 1.0 mA
0.000001 0.00001
0.1 A
0.0001
0.001
0.01
0.1
0.2
0.5 A
0.15
0.1
10 mA
0.05
0.1 A
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
0.1
1.0
1000
VBE(sat)
VOLTAGE (V)
h FE , DC CURRENT GAIN
VCE = 3.0 V
150°C
25°C
0.1
−40°C
VCE(sat)
100
0.01
0.1
1.0
0.01
0.001
IC/IB = 10
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
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2
1.0
NSS30070MR6T1G
1.0
0.16
T = 85°C
0.1
VCE(sat)
0.01
0.01
0.1
0°C
0.08
0.04
0
1.0
0.1
0.01
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
Figure 6. Collector−Emitter Saturation Voltage
0.6
1.0
T = 85°C
IC/IB = 100
0.5
−40°C
25°C
VBE(on) , VOLTAGE (V)
VCE(sat) , VOLTAGE (V)
0.12
IC/IB = 100
0.001
0°C
0.4
0.3
0.2
0.75
25°C
0.5
150°C
0.25
0.1
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
25°C
IC/IB = 10
VCE(sat) , VOLTAGE (V)
VOLTAGE (V)
VBE(sat)
VCE = 1.0 V
0.1
0
1.0
0.0001
0.001
0.1
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
Figure 8. VBE(on) Voltage
1.0
1.0
0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
DUTY CYCLE, D = t1/t2
0.01
0.0001
0.001
0.1
0.01
1.0
TIME (sec)
Figure 9. Thermal Response Curve
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3
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
10
100
NSS30070MR6T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
A
L
6
5
4
2
3
B
S
1
DIM
A
B
C
D
G
H
J
K
L
M
S
D
G
M
J
C
0.05 (0.002)
K
H
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
0_
10 _
0.0985 0.1181
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
SOLDERING FOOTPRINT*
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.65
0_
10 _
2.50
3.00
NO CONNECTION
COLLECTOR
EMITTER
NO CONNECTION
COLLECTOR
BASE
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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For additional information, please contact your
local Sales Representative.
NSS30070MR6/D