MGP15N40CL, MGB15N40CL, MGC15N40CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. N–CHANNEL IGBT 15 A, 410 V VCE(on) = 1.8 V MAX • Gate–Emitter ESD Protection • Temperature Compensated Gate–Collector Voltage Clamp Limits • • • • • C Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) G RG RGE E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 440 VDC Collector–Gate Voltage VCER 440 VDC VGE 22 VDC Collector Current–Continuous @ TC = 25°C IC 15 ADC Total Power Dissipation @ TC = 25°C Derate above 25°C PD 136 Watts 1.0 W/°C –55 to 175 °C Gate–Emitter Voltage Operating and Storage Temperature Range TJ, Tstg MARKING DIAGRAMS TO–220 CASE 221A STYLE 9 G C GP15N40CL ALYYWW E D2PAK CASE 418B STYLE 3 GB15N40CL ALYYWW A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week ORDERING INFORMATION Device Package Shipping MGP15N40CL TO–220 50 Units/Rail MGB15N40CLT4 D2PAK 800 Tape & Reel Die Options Not Applicable MGC15N40CL Semiconductor Components Industries, LLC, 2000 April, 2000 – Rev. 1 1 Publication Order Number: MGP15N40CL/D MGP15N40CL, MGB15N40CL, MGC15N40CL UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ t150°C) Characteristic Symbol Single Pulse Collector–to–Emitter Avalanche Energy VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C Value Unit EAS mJ 300 150 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJC 1.0 °C/W TO–220 RθJA 62.5 D2PAK RθJA 50 TL 275 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit BVCES IC = 2 mA TJ = –40°C to 175°C 380 410 440 VDC ICES VCE = 350 V, VGE = 0, TJ = 25°C – 1.0 40 µADC VCE = 350 V, VGE = 0, TJ = 150°C – 10 200 VCE = –24 V – 0.35 1.0 OFF CHARACTERISTICS Collector–Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector–Emitter Leakage Current Gate–Emitter Clamp Voltage IECS mA BVGES IG = 5 mA 17 20 22 VDC IGES VGE = 10 V 384 550 1000 µADC RG – – 70 – Ω RGE – 10 18 26 kΩ VGE(th) IC = 1 mA VGE = VCE 1.0 1.6 2.1 VDC – – – 4.4 – mV/°C Collector–to–Emitter On–Voltage VCE(on) IC = 6 A, VGE = 4 V – 1.25 1.8 VDC Collector–to–Emitter On–Voltage VCE(on) IC = 10 A, VGE = 4.5 V, TJ = 150°C – 1.45 1.8 VDC gfs VCE = 5 V, IC = 6 A 8.0 15 – Mhos Input Capacitance CISS VCC = 15 V – 700 – pF Output Capacitance COSS VGE = 0 V – 130 – Transfer Capacitance CRSS f = 1 MHz – 3.5 – Gate–Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor ON CHARACTERISTICS* Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Forward Transconductance DYNAMIC CHARACTERISTICS *Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. http://onsemi.com 2 MGP15N40CL, MGB15N40CL, MGC15N40CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit td(off) VCC = 300 V, IC = 10 A – 13 – µSec tf RG = 1 kΩ, L = 300 µH – 6.0 – td(on) VCC = 10 V, IC = 6.5 A – 1.0 – tr RG = 1 kΩ, RL = 1 Ω – 5.0 – QT VCC = 350 V – TBD – Q1 IC = 15 A – TBD – Q2 VGE = 5 V – TBD – SWITCHING CHARACTERISTICS* Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Gate Charge *Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. http://onsemi.com 3 µSec nC MGP15N40CL, MGB15N40CL, MGC15N40CL 45 40 VGE = 10.0 V 35 VGE = 5.0 V I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 45 VGE = 4.0 V 30 25 25 VGE = 3.0 V 20 20 15 10 Tj = 25°C 5 1 2 3 4 5 6 7 0 8 I C , COLLECTOR CURRENT (AMPS) Tj = 150°C 5 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics Figure 2. Output Characteristics V CE , COLLECTOR TO EMITTER VOLTAGE (VOLTS) 0 30 2.0 VCE = 10 V 25 20 1.8 IC = 15 A 1.5 IC = 10 A 1.3 IC = 5 A 1.0 15 Tj = 150°C 0.8 10 Tj = 25°C 0.5 Tj = 40°C 5 VGE = 15 V 0.3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.0 –50 5 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Transfer Characteristics –25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE (°C) Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature 2.5 THRESHOLD VOLTAGE (VOLTS) 10000 C, CAPACITANCE (pF) VGE = 3.0 V 15 10 0 VGE = 4.0 V VGE = 5.0 V 35 30 0 VGE = 10.0 V 40 CISS 1000 100 COSS 10 CRSS 1 0 20 40 60 80 2.0 IC = 1 mA Mean 1.5 Mean – 4 σ 1.0 0.5 0.0 –50 100 120 140 160 180 200 Mean + 4 σ –25 0 25 50 75 100 125 150 TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Figure 6. Threshold Voltage versus Temperature http://onsemi.com 4 MGP15N40CL, MGB15N40CL, MGC15N40CL 20 20 VCC = 300 V VGE = 5.0 V Tj = 25°C IC = 10 A L = 300 µH 16 14 12 16 14 td(off) 10 8 tf 6 4 8 VCC = 300 V VGE = 5.0 V Tj = 150°C IC = 10 A L = 300 µH 6 4 2 2 0 250 500 750 0 250 1000 500 750 1000 RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS) Figure 7. Switching Speed versus Gate Resistance Figure 8. Switching Speed versus Gate Resistance 20 20 VCC = 300 V VGE = 5.0 V RG = 1000 Ω IC = 10 A L = 300 µH 16 14 12 18 td(off) SWITCHING TIME (m S) 18 SWITCHING TIME (m S) tf 12 10 10 tf 8 6 4 td(off) 16 14 12 10 8 4 2 0 –25 0 25 50 75 100 125 150 tf VCC = 300 V VGE = 5.0 V RG = 1000 Ω Tj = 150°C L = 300 µH 6 2 0 –50 0 2 4 6 8 10 12 14 TC, CASE TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS) Figure 9. Switching Speed versus Case Temperature Figure 10. Total Switching Losses versus Collector Current 16 20 30 18 25 I L, LATCH CURRENT (AMPS) I L, LATCH CURRENT (AMPS) td(off) 18 SWITCHING SPEED (m S) SWITCHING TIME (m S) 18 VCC = 50 V VGE = 5.0 V RG = 1000 Ω 25°C 20 3.0 mH 16 14 6.0 mH 12 150°C 15 10 10 5 8 VCC = 50 V VGE = 5.0 V RG = 1000 Ω 6 4 2 0 0 0 1 2 3 4 5 6 7 8 9 0 10 INDUCTOR (mH) 25 50 75 100 125 150 175 TEMPERATURE (°C) Figure 11. Latch Current versus Inductor (Typical) Figure 12. Latch Current versus Temperature (Typical) http://onsemi.com 5 MGP15N40CL, MGB15N40CL, MGC15N40CL PACKAGE DIMENSIONS TO–220 CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 GATE COLLECTOR EMITTER COLLECTOR D2PAK CASE 418B–03 ISSUE D C E V –B– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A 1 2 S 3 –T– SEATING PLANE K J G D H M T B INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. 2. 3. 4. 3 PL 0.13 (0.005) DIM A B C D E G H J K S V M http://onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 MGP15N40CL, MGB15N40CL, MGC15N40CL Notes http://onsemi.com 7 MGP15N40CL, MGB15N40CL, MGC15N40CL TMOS is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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