ON Semiconductor Amplifier Transistors BC337,-16,-25,-40 BC338,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 25 — — — — 50 30 — — — — 5.0 — — — — — — 100 100 — — — — 100 100 — — 100 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 µA, IE = 0) V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 Emitter–Base Breakdown Voltage (IE = 10 A, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 February, 2001 – Rev. 1 Vdc ICBO IEBO 1 Vdc nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) Semiconductor Components Industries, LLC, 2001 Vdc nAdc nAdc Publication Order Number: BC337/D BC337,–16,–25,–40 BC338,–16,–25,–40 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 250 60 — — — — — 630 250 400 630 — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE — BC337/BC338 BC337–16/BC338–16 BC337–25/BC338–25 BC337–40/BC338–40 (IC = 300 mA, VCE = 1.0 V) Base–Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) — — 1.2 Vdc Collector–Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) — — 0.7 Vdc Cob — 15 — pF fT — 210 — MHz SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 Figure 1. Thermal Response http://onsemi.com 2 2.0 5.0 10 20 50 100 BC337,–16,–25,–40 BC338,–16,–25,–40 1.0 s 1.0 ms 1000 TJ = 135°C 100 µs hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25°C dc TA = 25°C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE VCE = 1 V TJ = 25°C 100 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain 1.0 1.0 TJ = 25°C TA = 25°C 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region — Safe Operating Area 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. “On” Voltages 100 +1 θVC for VCE(sat) 0 C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) 1000 -1 θVB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 6. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 3 100 BC337,–16,–25,–40 BC338,–16,–25,–40 PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 N N SECTION X–X STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 4 BC337/D